PECVD Recipes: Difference between revisions
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*[https://docs.google.com/spreadsheets/d/1xpk9tJrE68NIJ_1yIym0xBxd4fnzHHBHdkhFehruO3E/edit#gid=sharing Particulates (Gain4) in PECVD#2 2016] |
*[https://docs.google.com/spreadsheets/d/1xpk9tJrE68NIJ_1yIym0xBxd4fnzHHBHdkhFehruO3E/edit#gid=sharing Particulates (Gain4) in PECVD#2 2016] |
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*[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017 ] |
*[https://docs.google.com/spreadsheets/d/1ICgt-fgTvNPbE_65x5jUsqy8JjHVv5WUvmE7g7VUbsI/edit#gid=sharing Particulates (Gain4) in PECVD#2 2017 ] |
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*[https://docs.google.com/spreadsheets/d/1yPAPP24z3RcRRi-HqEp3GJN4JM8Ec8SFJwZ-OYGG2HU/edit#gid=sharing Particulates ( (Gain4 and |
*[https://docs.google.com/spreadsheets/d/1yPAPP24z3RcRRi-HqEp3GJN4JM8Ec8SFJwZ-OYGG2HU/edit#gid=sharing Particulates ( (Gain4 and Gain2) in PECVD#2 films 2017] |
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== SiO<sub>2</sub> deposition (PECVD #2) == |
== SiO<sub>2</sub> deposition (PECVD #2) == |
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*[[media:New Adv PECVD OXIDE 300C standard recipe OXIDE Standard Recipe.pdf|Oxide Standard Recipe]] |
*[[media:New Adv PECVD OXIDE 300C standard recipe OXIDE Standard Recipe.pdf|Oxide Standard Recipe]] |
Revision as of 20:44, 26 September 2017
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
- Particulates in PECVD#1 2015
- Particulates in PECVD#1 2016
- Particulates in PECVD#1 2017
- New Data Particulates Gain4/gain2 in PECVD#1 2017
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN 100nm Data 2014
- SiN 100nm Data 2015
- SiN 100nm Data 2016
- SiN 100nm Data 2017
- SiN 300nm Data 2017
- SiN 100 nm Thickness uniformity 2014
- SiN 100 nm Thickness uniformity 2015
- SiN 100 nm Thickness uniformity 2016
- SiN 100 nm Thickness uniformity 2017
- SiN 300nm Thickness uniformity 2017
SiO2 deposition (PECVD #1)
- SiO2 Standard Recipe
- SiO2 100nm Data 2014
- SiO2 100nm Data 2015
- SiO2 100nm Data 2016
- SiO2 100nm Data 2017
- SiO2 300nm Data 2017
- SiO2 100nm Thickness uniformity 2014
- SiO2 100 nm Thickness uniformity 2015
- SiO2 100 nmThickness uniformity 2016
- SiO2 100nm Thickness uniformity 2017
- SiO2 300nm Thickness uniformity 2017
OTHER recipes: LS SiN and SiOxNy deposition (PECVD #1)
- LS SiN Standard Recipe
- LS SiN Data 2014
- LS SiN 1000A Thickness uniformity 2014
- SiOxNy Standard Recipe
- SiOxNy Data 2014
- SiOxNy1000A Thickness uniformity 2014
PECVD 2 (Advanced Vacuum)
- Particulates (Gain4) in PECVD#2 2015
- Particulates (Gain4) in PECVD#2 2016
- Particulates (Gain4) in PECVD#2 2017
- Particulates ( (Gain4 and Gain2) in PECVD#2 films 2017
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data 2014
- Oxide Data 2015
- Oxide data 2016
- Oxide Data 2017
- Oxide Thickness Uniformity 2014
- Oxide Thickness Uniformity 2015
- Oxide Thickness Uniformity 2016
- Oxide Thickness Uniformity 2017
SiN deposition (PECVD #2)
- Nitride2 Standard Recipe
- Nitride2 Data 2014
- Nitride2 Data 2015
- Nitride2 Data 2016
- Nitride2 Data 2017
- Nitride2 Thickness Uniformity 2014
- Nitride2 Thickness Uniformity 2015
- Nitride2 Thickness Uniformity 2016
- Nitride2 Thickness Uniformity 2017
- SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate
LS SiN deposition (PECVD #2)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data 2014
- LS Nitride2 Data 2015
- LS Nitride2 Data 2016
- LS Nitride2 Data 2017
- LS Nitride2 Thickness Uniformity 2014
- LS Nitride2 Thickness Uniformity 2015
- LS Nitride2 Thickness Uniformity 2016
- LS Nitride2 Thickness Uniformity 2017
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
SiN (2% SiH4 - No-Ar - Extra N2)
50° (pinholes) | 100° (pinholes) | 250° |
---|---|---|
SiN (100% SiH4 )
50° (pinholes) | 100° (pinholes) | 250° |
---|---|---|
SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
---|---|---|
SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
---|---|---|
SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
---|---|---|
Amorphous Si (100%SiH4 Ar He)
90° | 250° |
---|---|