Stepper Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
No edit summary
No edit summary
Line 3: Line 3:
Below is a listing of stepper lithography recipes. Stepper 1 and Stepper 2 are i-line systems with good piece handling capabilities.  Stepper 3 is a DUV (248nm) system.  DUV resists do not work for i-line and i-line resists do not work for DUV.  Based on your sample reflectivity, absorption (or whether or not you use an ARC layer), and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. Underlayers such as LOL2000 or PMGI can be used on the stepper systems.  See the underlayer datasheets for details.   Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.
Below is a listing of stepper lithography recipes. Stepper 1 and Stepper 2 are i-line systems with good piece handling capabilities.  Stepper 3 is a DUV (248nm) system.  DUV resists do not work for i-line and i-line resists do not work for DUV.  Based on your sample reflectivity, absorption (or whether or not you use an ARC layer), and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. Underlayers such as LOL2000 or PMGI can be used on the stepper systems.  See the underlayer datasheets for details.   Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.


Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do a focus and/or exposure array to get optimal process parameters. 
Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do a focus and/or exposure array to get optimal process parameters. 


= [[Stepper 1 (GCA 6300)]] =
= [[Stepper 1 (GCA 6300)]] =


==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.
==Positive Resist (GCA 6300)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.
Line 190: Line 190:
|}
|}


= [[Stepper 2 (AutoStep 200)]] =
= [[Stepper 2 (AutoStep 200)]] =


==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.
Line 354: Line 354:
|}
|}


= [[Stepper 3 (ASML DUV)]] =
= [[Stepper 3 (ASML DUV)]] =
==Positive Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.

'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|- bgcolor="#D0E7FF"
! width="100" | Resist
! width="100" | Spin Cond.
! width="75" | Bake
! width="75" | Thickness
! width="125" | Exposure Time
! width="100" | Focus Offset
! width="75" | PEB
! width="100" | Developer
! width="125" | Developer Time
! width="300" | Comments
|-
| SPR955CM-0.9
| 3 krpm/30”
| 95°C/90”
| ~ 0.9 um
| 0.35”
| 0
| 110°C/90”
| AZ300MIF
| 60”
| align="left" |
*0.5um dense lines
*{{fl|SPR955-0.9-AS200-stepperrecipe.pdf|See SPR955CM AS200 data file}}

|-
| SPR955CM-0.9
| 3 krpm/30”
| 95°C/90”
| ~ 0.9 um
| 0.8”
| 0
| 110°C/90”
| AZ300MIF
| 60”
| align="left" |
*0.5um holes

|-
| SPR955CM-1.8
| 4 krpm/30”
| 95°C/90”
| ~ 1.8 um
| 0.4”
| -1
| 110°C/90”
| AZ300MIF
| 60”
| align="left" |
*{{fl|SPR955-1.8-AS200-stepperrecipe.pdf|See SPR955-1.8 AS200 data file}}

|-
| SPR950-0.8
| 4 krpm/30”
| 95°C/60”
| ~ 0.8 um
| '''0.30”'''
| 0
| 105°C/60”
| AZ300MIF
| 60"
| align="left" |
|-
| SPR220-3.0
| 2.5 krpm/30”
| 115°C/90”
| ~ 2.7 um
| '''0.72”'''
| 10
| 115°C/90”
| AZ300MIF
| 60"
| align="left" |
*0.5 um isolated lines

|-
| SPR220-7.0
| 3.5 krpm/45”
| 115°C/120”
| ~ 7.0 um
| '''1.35"'''
| 0
| *50°C/60”<br>
115°C/90”

| AZ300MIF
| 120"
| align="left" |
*1.0 um isolated lines; 1.25 um isolated spaces
**Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C

|}

==Negative Resist (AutoStep 200)== <!--Note that if this heading is changed, the recipe links on the Lithography page must be changed--> Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

'''NOTE''': The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.

{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable"
|- bgcolor="#D0E7FF"
! width="100" | Resist
! width="100" | Spin Cond.
! width="75" | Bake
! width="75" | Thickness
! width="125" | Exposure Time
! width="100" | Focus Offset
! width="75" | PEB
! width="75" | Flood
! width="100" | Developer
! width="125" | Developer Time
! width="300" | Comments
|-
| nLOF5510
| 3 krpm/30”
| 90°C/60”
| ~ 0.93 um
| .25”
| -1
| 110°C/60”
| 0
| AZ300MIF
| 60”
| align="left" |
*0.4 um lines dense good
*Use heated 1165 stripper for removal or lift-off
*{{fl|nLOF5510-AS200-stepperrecipe.pdf|See nLOF5510 As200 data file}}

|-
| AZ5214
| 6 krpm/30”
| 95°C/60”
| ~ 1.0 um
| '''0.06”'''
| 0
| 110°C/60”
| 60"
| AZ300MIF
| 60"
| align="left" |
*0.7 um res. possible

|-
| nLOF2020
| 4 krpm/30”
| 110°C/60”
| ~ 2 um
| '''0.17”'''
| -6
| 110°C/60”
| 0
| AZ300MIF
| 90"
| align="left" |
*~ .85 um line opening/lift-off good. Isolated mesas can be smaller.
*Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.

|}

Revision as of 22:58, 22 April 2013

Back to Lithography Recipes.

Below is a listing of stepper lithography recipes. Stepper 1 and Stepper 2 are i-line systems with good piece handling capabilities.  Stepper 3 is a DUV (248nm) system.  DUV resists do not work for i-line and i-line resists do not work for DUV.  Based on your sample reflectivity, absorption (or whether or not you use an ARC layer), and surface topography the exposure time / focus offset parameters may vary. This listing is a guideline to get you started. The recipes are tabulated to give you the values of the key parameters you will need to establish your recipe. Underlayers such as LOL2000 or PMGI can be used on the stepper systems.  See the underlayer datasheets for details.   Post develop bakes (not listed) are used to make the resist more etch resistant and depend on subsequent processes. Care should be taken with post development bakes as resist reflow can occur. Unless otherwise noted, all exposures are done on flat, silicon wafers.

Parameters are indicated in separate tables for each stepper system. Multiply the exposure times by 0.30 (from the 6300 system) to get a starting exposure time for the GCA Autostep200 system. You will need to do a focus and/or exposure array to get optimal process parameters. 

Stepper 1 (GCA 6300)

==Positive Resist (GCA 6300)== Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.

Resist Spin Cond. Bake Thickness Exposure Time Focus Offset PEB Developer Developer Time Comments
SPR955CM0.9 3 krpm/30” 95°C/60” ~ 0.9 um 1.2” 0 110°C/60” AZ300MIF 60"
SPR955CM0.9 3 krpm/30” 95°C/60” ~ 0.9 um 3.0” 4 110°C/60” AZ300MIF 60"
SPR955CM0.9

CEM365iS

3 krpm/30”

5 krpm/30”

95°C/90” ~ 0.9 um 2.2” -10 110°C/60” AZ300MIF 60"
SPR950-0.8 4 krpm/30” 95°C/60” ~ 0.8 um 1.0” 0 105°C/60” AZ300MIF 60"
SPR955CM-1.8 4 krpm/30” 90°C/90” ~ 1.8 um 2.3” 0 110°C/90” AZ300MIF 60"
SPR220-3.0 2.5 krpm/30” 115°C/90” ~ 2.7 um 2.4” 10 115°C/90” AZ300MIF 60"
SPR220-7.0 3.5 krpm/45” 115°C/120” ~ 7.0 um 4.5” 0 *50°C/60”

115°C/90”

AZ300MIF 120"
  • 1.0 um isolated lines; 1.25 um isolated spaces
    • Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C
  • See SPR220-7 Data File

==Negative Resist (GCA 6300)== Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

Resist Spin Cond. Bake Thickness Exposure Time Focus Offset PEB Flood Developer Developer Time Comments
AZ5214 6 krpm/30” 95°C/60” ~ 1.0 um 0.2” 0 110°C/60” 60" AZ300MIF 60"
  • 0.7 um res. possible 
nLOF5510 3 krpm/30” 90°C/60” ~ 0.93 um 0.74” -6 110°C/60” 0 AZ300MIF 60"
  • 0.5 um line openings good dense or isolated
  • Use heated 1165 stripper for removal or lift-off
  • See nLOF5510 data file
nLOF2020 4 krpm/30” 110°C/60” ~ 2 um 0.55” -6 110°C/60” 0 AZ300MIF 90"
  • ~ .85 um line opening/lift-off good. Isolated mesas can be smaller.
  • Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.
  • See nLOF2020 Data File

Stepper 2 (AutoStep 200)

==Positive Resist (AutoStep 200)== Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.

NOTE: The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.

Resist Spin Cond. Bake Thickness Exposure Time Focus Offset PEB Developer Developer Time Comments
SPR955CM-0.9 3 krpm/30” 95°C/90” ~ 0.9 um 0.35” 0 110°C/90” AZ300MIF 60”
SPR955CM-0.9 3 krpm/30” 95°C/90” ~ 0.9 um 0.8” 0 110°C/90” AZ300MIF 60”
  • 0.5um holes
SPR955CM-1.8 4 krpm/30” 95°C/90” ~ 1.8 um 0.4” -1 110°C/90” AZ300MIF 60”
SPR950-0.8 4 krpm/30” 95°C/60” ~ 0.8 um 0.30” 0 105°C/60” AZ300MIF 60"
SPR220-3.0 2.5 krpm/30” 115°C/90” ~ 2.7 um 0.72” 10 115°C/90” AZ300MIF 60"
  • 0.5 um isolated lines
SPR220-7.0 3.5 krpm/45” 115°C/120” ~ 7.0 um 1.35" 0 *50°C/60”

115°C/90”

AZ300MIF 120"
  • 1.0 um isolated lines; 1.25 um isolated spaces
    • Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C

==Negative Resist (AutoStep 200)== Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

NOTE: The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.

Resist Spin Cond. Bake Thickness Exposure Time Focus Offset PEB Flood Developer Developer Time Comments
nLOF5510 3 krpm/30” 90°C/60” ~ 0.93 um .25” -1 110°C/60” 0 AZ300MIF 60”
AZ5214 6 krpm/30” 95°C/60” ~ 1.0 um 0.06” 0 110°C/60” 60" AZ300MIF 60"
  • 0.7 um res. possible
nLOF2020 4 krpm/30” 110°C/60” ~ 2 um 0.17” -6 110°C/60” 0 AZ300MIF 90"
  • ~ .85 um line opening/lift-off good. Isolated mesas can be smaller.
  • Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.

Stepper 3 (ASML DUV)

==Positive Resist (AutoStep 200)== Unless otherwise noted, bakes are on hot plates. For recipes with CEM, the CEM is spun on after the first resist bake, exposure is then done, and the CEM is rinsed off with DI water before the PEB. CEM generally improves resolution and process tolerance at the expense of higher exposure time.

NOTE: The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.

Resist Spin Cond. Bake Thickness Exposure Time Focus Offset PEB Developer Developer Time Comments
SPR955CM-0.9 3 krpm/30” 95°C/90” ~ 0.9 um 0.35” 0 110°C/90” AZ300MIF 60”
SPR955CM-0.9 3 krpm/30” 95°C/90” ~ 0.9 um 0.8” 0 110°C/90” AZ300MIF 60”
  • 0.5um holes
SPR955CM-1.8 4 krpm/30” 95°C/90” ~ 1.8 um 0.4” -1 110°C/90” AZ300MIF 60”
SPR950-0.8 4 krpm/30” 95°C/60” ~ 0.8 um 0.30” 0 105°C/60” AZ300MIF 60"
SPR220-3.0 2.5 krpm/30” 115°C/90” ~ 2.7 um 0.72” 10 115°C/90” AZ300MIF 60"
  • 0.5 um isolated lines
SPR220-7.0 3.5 krpm/45” 115°C/120” ~ 7.0 um 1.35" 0 *50°C/60”

115°C/90”

AZ300MIF 120"
  • 1.0 um isolated lines; 1.25 um isolated spaces
    • Let sample sit in air for 20 minutes before PEB, step to 50°C for 60” first, then 115°C

==Negative Resist (AutoStep 200)== Unless otherwise noted, bakes are on hot plate. All flood exposures are done in broadband light using any contact aligner. Also, because the tone is negative, a shorter first exposure time will result in more undercut, which is desirable for single-layer lift-off processes. Under these conditions more develop time will also give more undercut.

NOTE: The bolded exposure times were found by multiplying the exposure times from the GCA 6300 system by 0.30. They should be sued as a starting point. You will need to do an exposure array to get precise times for the Autostep system. In general, the resolution achievable is ~ 100 nm smaller for the Autostep200 system.

Resist Spin Cond. Bake Thickness Exposure Time Focus Offset PEB Flood Developer Developer Time Comments
nLOF5510 3 krpm/30” 90°C/60” ~ 0.93 um .25” -1 110°C/60” 0 AZ300MIF 60”
AZ5214 6 krpm/30” 95°C/60” ~ 1.0 um 0.06” 0 110°C/60” 60" AZ300MIF 60"
  • 0.7 um res. possible
nLOF2020 4 krpm/30” 110°C/60” ~ 2 um 0.17” -6 110°C/60” 0 AZ300MIF 90"
  • ~ .85 um line opening/lift-off good. Isolated mesas can be smaller.
  • Use heated 1165 stripper for removal or lift-off Sensetive to PEB temp.
Retrieved from "https://wiki.nanofab.ucsb.edu/w/index.php?title=Stepper_Recipes&oldid=2742"