Lithography Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
Line 24: Line 24:
|- valign="top"
|- valign="top"
| width="400" |
| width="400" |
;Positive Photoresists
;<big>Positive Photoresists</big>
'''''i-line and broadband'''''

*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
*{{fl|SPR950-Positive-Resist-Datasheet.pdf|SPR950-0.8}}
*{{fl|SPR950-Positive-Resist-Datasheet.pdf|SPR950-0.8}}
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}}
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}
*{{fl|THMR_iP_3500_iP3600.pdf|THMR-3600HP-1 (thin i-line and Holography)}}
*{{fl|THMR_iP_3500_iP3600.pdf|THMR-3600HP-1 (thin i-line and Holography)}}
*{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|THMR-3600HP-2 (thin i-line and Holography)}}
*{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|THMR-3600HP-2 (thin i-line and Holography)}}
*{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|THMR-3600HP-3 (thin i-line and Holography)}}
*{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|THMR-3600HP-3 (thin i-line and Holography)}}
'''''DUV-248nm'''''
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}}
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}}
*{{fl|PEK-162-Positive-Resist-Datasheet.pdf|PEK-162C1}}


;Negative Photoresists
;<big>Negative Photoresists</big>
'''''i-line and broadband'''''

*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}}
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}}
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}}
*{{fl|UVN2300-Negative-Resist-Datasheet.pdf|UVN2300-0.5}}
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2015}}
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}}
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}}
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}
*{{fl|NR9-6000PY-revA.pdf|Futurrex NR9-6000PY(use AZ300MIF dev)}}
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2015}}
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}}
'''''DUV-248nm'''''
*{{fl|UVN2300-Negative-Resist-Datasheet.pdf|UVN2300-0.5}}



;Underlayers
;<big>Underlayers</big>


*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}}
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}}



;E-beam resists
;<big>E-beam resists</big>


*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}}
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}}



;Nanoimprinting
;<big>Nanoimprinting</big>


*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}}
Line 67: Line 73:


|
|
;Contrast Enhancement Materials
;<big>Contrast Enhancement Materials</big>


*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}}



;Anti-Reflection Coatings
;<big>Anti-Reflection Coatings</big>


*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC}}
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC}}
Line 77: Line 84:
*{{fl|DS-K101-Anti-Reflective-Coating.pdf|DS-K101 (developable BARC)}}
*{{fl|DS-K101-Anti-Reflective-Coating.pdf|DS-K101 (developable BARC)}}



;Adhesion Promoters
;<big>Adhesion Promoters</big>


*HMDS
*HMDS
Line 85: Line 93:




;BCB and SOG
;<big>BCB and SOG</big>


*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}
Line 92: Line 100:
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}}



;Developers
;<big>Developers</big>


*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}}
Line 100: Line 109:
*101A Developer (for DUV Flood Exposed PMGI)
*101A Developer (for DUV Flood Exposed PMGI)



;Photoresist Removers
;<big>Photoresist Removers</big>


*{{fl|1165-Resist-Remover.pdf|1165}}
*{{fl|1165-Resist-Remover.pdf|1165}}

Revision as of 16:11, 27 August 2015

General Information

This page contains information and links to recipes/datasheets spin-coated materials used in the facility. In general, the following information is provided for the following materials:

  • Photoresists: Links to nominal recipes to provide the user with starting points are found in the Photo Lithography Recipe section. Substrate, surface materials, pattern size can often affect process parameters. Datasheets provided for reference.
  • E-beam Lithography Resists: Links to nominal recipes may be provided in the E-Beam Lithography Recipe Section. Substrates and patterns play a large role in process parameters. Datasheets provided for reference.
  • Underlayers: These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist. Datasheets are provided and some recipes are found in the Lift-Off Techniques section.
  • Nanoimprinting Resists: Datasheets are provided. Any recipes provided are for use in the Nanonex NX2000 system only and are found in the Nanoimprint section.
  • Holography: For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square. Recipe on silicon provided in the holography section.
  • Anti-Reflection Coatings: These are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes. Recipes using these materials are found within the photoresist recipes themselves. Datasheets are provided for reference on use of the materials.
  • Contrast Enhancement Materials (CEM): Used for resolution enhancement. Not for use in contact aligners. Recipes using these materials are found within the photoresist recipes themselves. Datasheets also provided.
  • Adhesion Promoters: Datasheets are provided on use of these materials.
  • Low-K Spin-on Dielectrics: Datasheets are provided for BCB, Phoot-BCB, and SOG for reference on use. Some recipes are provided in the Low-K section.
  • Developers and Removers: Datasheets provided for reference.

Lift-Off Techniques

Chemical Datasheets

Positive Photoresists

i-line and broadband

DUV-248nm

Negative Photoresists

i-line and broadband

DUV-248nm


Underlayers


E-beam resists


Nanoimprinting
Contrast Enhancement Materials


Anti-Reflection Coatings


Adhesion Promoters


BCB and SOG


Developers


Photoresist Removers

Photolithography Recipes

  • R = Recipe is available. Clicking this link will take you to the recipe.
  • A = Material is available for use, but no recipes are provided.


Photolithography Recipes

Contact Aligners Steppers
Positive Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)


AZ4110 R1 R1 A A
AZ4210 R1 R1 A A
AZ4330RS R1 R1 A A
OCG 825-35CS A A A A
SPR 950-0.8 A A A A
SPR 955 CM-0.9 A R1 R1 R1
SPR 955 CM-1.8 A A R1 R1
SPR 220-3.0 R1 R1 R1 R1
SPR 220-7.0 R1 R1 R1 R1
THMR-IP3600 HP D

A A
UV6-0.8 R1
UV210-0.3 R1
Negative Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)


AZ5214-EIR R1 R1 R1 R1
AZnLOF 2020 R1 R1 R1 R1
AZnLOF 2035 A A A A
AZnLOF 2070 A A A A
AZnLOF 5510 A A R1 R1
UVN2300-0.5 R1
SU-8 2005,2015 A A A A
SU-8 2075 A A A A
NR9-1000,3000,6000PY A A A A
SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)


E-Beam Lithography Recipes

  • Under Development

Nanoimprinting

Holography Recipes

Low-K Dielectric