Thermal Processing Recipes: Difference between revisions
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=Thermal Oxidation of Silicon= |
=Thermal Oxidation of Silicon= |
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Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness. |
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Please see [[Calculators + Utilities]] page for links to these oxidation calculators. |
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Thermal oxidation recipes for Wet (H2O vapor) and Dry (O2 gas) oxidation up to 1050°C are available on the [[Tube Furnace (Tystar 8300)|TyStar 8300 system]]. |
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=Wafer Substrate Bonding= |
=Wafer Substrate Bonding= |
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Numerous research groups perform wafer bonding using either the [[Wafer Bonder (SUSS SB6-8E)|Suss Wafer Bonder]] or a custom graphite fixture and any one of [[Thermal Processing|numerous ovens]], such as the N2-purged [[Tube Furnace Wafer Bonding (Thermco)|Wafer Bonding Furnace]] (with glove box) or N2-purged [[High Temp Oven (Blue M)|Blue M oven]]. |
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The [[Plasma Activation (EVG 810)|EVG Plasma Activation]] system and [[Goniometer]] allow for surface prep/inspection prior to bonding. |
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[[Category:Processing]] |
[[Category:Processing]] |
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Revision as of 06:56, 16 November 2017
Thermal Oxidation of Silicon
Online calculators for thermal oxidation can be used to estimate the oxidation time for a desired oxidation thickness.
Please see Calculators + Utilities page for links to these oxidation calculators.
Thermal oxidation recipes for Wet (H2O vapor) and Dry (O2 gas) oxidation up to 1050°C are available on the TyStar 8300 system.
Wafer Substrate Bonding
Numerous research groups perform wafer bonding using either the Suss Wafer Bonder or a custom graphite fixture and any one of numerous ovens, such as the N2-purged Wafer Bonding Furnace (with glove box) or N2-purged Blue M oven.
The EVG Plasma Activation system and Goniometer allow for surface prep/inspection prior to bonding.