Difference between revisions of "PECVD Recipes"
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{{recipes|Vacuum Deposition}} |
{{recipes|Vacuum Deposition}} |
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=[[PECVD 1 (PlasmaTherm 790)]]= |
=[[PECVD 1 (PlasmaTherm 790)]]= |
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+ | Note: Software upgrade performed on 2018-10-10. Note any changes in film. |
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*[https://docs.google.com/spreadsheets/d/1a0XrY6HuJ6L9niThZYI-u4XH69Hnbe3jkm1qKmrR8Rg/edit#gid=sharing Particulates (Gain4) in PECVD#1 2015] |
*[https://docs.google.com/spreadsheets/d/1a0XrY6HuJ6L9niThZYI-u4XH69Hnbe3jkm1qKmrR8Rg/edit#gid=sharing Particulates (Gain4) in PECVD#1 2015] |
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*[https://docs.google.com/spreadsheets/d/1ZfkspbCQZmdThC8qB4XyjsyPAzrMF1QbHSMFmH6xSo4/edit#gid=sharing Particulates (Gain4) in PECVD#1 2016] |
*[https://docs.google.com/spreadsheets/d/1ZfkspbCQZmdThC8qB4XyjsyPAzrMF1QbHSMFmH6xSo4/edit#gid=sharing Particulates (Gain4) in PECVD#1 2016] |
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==SiN deposition (Unaxis VLR) == |
==SiN deposition (Unaxis VLR) == |
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=== SiN (2% SiH<sub>4</sub>) === |
=== SiN (2% SiH<sub>4</sub>) === |
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=== SiN (2% SiH<sub>4</sub> - No-Ar) === |
=== SiN (2% SiH<sub>4</sub> - No-Ar) === |
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=== SiN (2% SiH<sub>4</sub> - No-Ar - Extra N<sub>2</sub>) === |
=== SiN (2% SiH<sub>4</sub> - No-Ar - Extra N<sub>2</sub>) === |
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=== SiN (100% SiH<sub>4</sub> ) === |
=== SiN (100% SiH<sub>4</sub> ) === |
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==SiO<sub>2</sub> deposition (Unaxis VLR) == |
==SiO<sub>2</sub> deposition (Unaxis VLR) == |
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=== SiO<sub>2</sub> (2% SiH<sub>4</sub>) === |
=== SiO<sub>2</sub> (2% SiH<sub>4</sub>) === |
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=== SiO<sub>2</sub> (2% SiH<sub>4</sub> - No Ar) === |
=== SiO<sub>2</sub> (2% SiH<sub>4</sub> - No Ar) === |
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=== SiO<sub>2</sub> (100% SiH<sub>4</sub> HDR) === |
=== SiO<sub>2</sub> (100% SiH<sub>4</sub> HDR) === |
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=== SiO<sub>2</sub> (100% SiH<sub>4</sub> LDR) === |
=== SiO<sub>2</sub> (100% SiH<sub>4</sub> LDR) === |
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=== Amorphous Si (100%SiH<sub>4</sub> Ar He) === |
=== Amorphous Si (100%SiH<sub>4</sub> Ar He) === |
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! width="350" align="center" |90° |
! width="350" align="center" |90° |
Revision as of 10:48, 12 October 2018
Back to Vacuum Deposition Recipes.
PECVD 1 (PlasmaTherm 790)
Note: Software upgrade performed on 2018-10-10. Note any changes in film.
- Particulates (Gain4) in PECVD#1 2015
- Particulates (Gain4) in PECVD#1 2016
- Particulates (Gain4) in PECVD#1 2017
SiN deposition (PECVD #1)
- SiN Standard Recipe
- SiN 100nm Data 2014
- SiN 100nm Data 2015
- SiN 100nm Data 2016
- SiN 100nm Data 2017
- SiN 300nm Data 2017
- SiN 300nm Data 2018
- SiN 100 nm Thickness uniformity 2014
- SiN 100 nm Thickness uniformity 2015
- SiN 100 nm Thickness uniformity 2016
- SiN 100 nm Thickness uniformity 2017
- SiN 300nm Thickness uniformity 2017
- SiN 300nm Thickness uniformity 2018
SiO2 deposition (PECVD #1)
- SiO2 Standard Recipe
- SiO2 100nm Data 2014
- SiO2 100nm Data 2015
- SiO2 100nm Data 2016
- SiO2 100nm Data 2017
- SiO2 300nm Data 2017
- SiO2 300nm Data 2018
- SiO2 100nm Thickness uniformity 2014
- SiO2 100 nm Thickness uniformity 2015
- SiO2 100 nmThickness uniformity 2016
- SiO2 100nm Thickness uniformity 2017
- SiO2 300nm Thickness uniformity 2017
- SiO2 300nm Thickness uniformity 2018
OTHER recipes: Low-Stress (LS) SiN and SiOxNy deposition (PECVD #1)
- LS SiN Standard Recipe
- LS SiN Data 2014
- LS SiN 1000A Thickness uniformity 2014
- SiOxNy Standard Recipe
- SiOxNy Data 2014
- SiOxNy1000A Thickness uniformity 2014
PECVD 2 (Advanced Vacuum)
- Particulates (Gain4) in PECVD#2 2015
- Particulates (Gain4) in PECVD#2 2016
- Particulates (Gain4) in PECVD#2 2017
SiO2 deposition (PECVD #2)
- Oxide Standard Recipe
- Oxide Data 2014
- Oxide Data 2015
- Oxide data 2016
- Oxide Data 2017
- Oxide Data 2018
- Oxide Thickness Uniformity 2014
- Oxide Thickness Uniformity 2015
- Oxide Thickness Uniformity 2016
- Oxide Thickness Uniformity 2017
- Oxide Thickness Uniformity 2018
SiN deposition (PECVD #2)
- Nitride2 Standard Recipe
- Nitride2 Data 2014
- Nitride2 Data 2015
- Nitride2 Data 2016
- Nitride2 Data 2017
- Nitride2 Data 2018
- Nitride2 Thickness Uniformity 2014
- Nitride2 Thickness Uniformity 2015
- Nitride2 Thickness Uniformity 2016
- Nitride2 Thickness Uniformity 2017
- Nitride2 Thickness Uniformity 2018
- SiNx Film Stress vs LF and HF Duration Time, and Gas Flowing-rate
Low-Stress SiN deposition (PECVD #2)
Low-Stress SilIcon Nitride (< 100 MPa)
- LS Nitride2 Standard Recipe
- LS Nitride2 Data 2014
- LS Nitride2 Data 2015
- LS Nitride2 Data 2016
- LS Nitride2 Data 2017
- LS Nitride Data 2018
- LS Nitride2 Thickness Uniformity 2014
- LS Nitride2 Thickness Uniformity 2015
- LS Nitride2 Thickness Uniformity 2016
- LS Nitride2 Thickness Uniformity 2017
- LS Nitride2 Thickness Uniformity 2018
Amorphous-Si deposition (PECVD #2)
ICP-PECVD (Unaxis VLR)
SiN deposition (Unaxis VLR)
SiN (2% SiH4)
SiN (2% SiH4 - No-Ar)
SiN (2% SiH4 - No-Ar - Extra N2)
50° (pinholes) | 100° (pinholes) | 250° |
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SiN (100% SiH4 )
50° (pinholes) | 100° (pinholes) | 250° |
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SiO2 deposition (Unaxis VLR)
SiO2 (2% SiH4)
50° | 100° | 250° |
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SiO2 (2% SiH4 - No Ar)
50° | 100° | 250° |
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SiO2 (100% SiH4 HDR)
50° | 100° | 250° |
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SiO2 (100% SiH4 LDR)
50° | 100° | 250° |
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Amorphous Si (100%SiH4 Ar He)
90° | 250° |
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