Stepper 3 (ASML DUV): Difference between revisions

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(→‎Process Information: expand recipes text, added wafer size)
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* UVN2300-0.5 - Negative: 500nm nominal thickness
* UVN2300-0.5 - Negative: 500nm nominal thickness


* AR2/DUV42P-6/DS-K101: Anti-Reflective Coatings
* DUV42P-6/DS-K101 - Bottom Anti-Reflective Coatings “BARC”
* PMGI/LOL1000/LOL2000 - Underlayers
* PMGI: Underlayer


AZ300MIF Developer for all processes
AZ300MIF Developer for all processes
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=Operating Procedures=
=Operating Procedures=
* [[ASML Stepper 3 Standard Operating Procedure|Standard Operating Procedure]]
* [[ASML Stepper 3 Standard Operating Procedure|Standard Operating Procedures]]
** ''Exposing wafers, loading reticles, focus/exposure matrix''
* [[media:ASML Job Set-Up Guide v2.pdf|Job Programming - Full]]
* [[media:ASML Job Set-Up Guide v2.pdf|Job Programming - Full]]
* [[media:ASML Job Set-Up Guide simple v1.pdf|Job Programming- Simplified -Full Wafers]]
* [[media:ASML Job Set-Up Guide simple v1.pdf|Job Programming- Simplified -Full Wafers]]

Revision as of 15:42, 12 June 2019

Stepper 3 (ASML DUV)
ASML.jpg
Tool Type Lithography
Location Bay 7
Supervisor Brian Thibeault
Supervisor Phone (805) 893-2268
Supervisor E-Mail thibeault@ece.ucsb.edu
Description ASML PAS 5500/300 DUV Stepper
Manufacturer ASML
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About

The ASML 5500 stepper is a 248nm DUV stepper for imaging dense features down to below 200nm and isolated line structures down to below 150nm. Overlay accuracy is better than 30nm.

The system is configured for 4” wafers and, with staff support, mounted pieces down to 14mm in size can be exposed using a 4” wafer as a carrier. The system is designed for high throughput, so shooting multiple 4" wafers is extremely fast. Additionally, exposure jobs are highly programmable, allowing for very flexible exposures of multiple aligned patterns from multiple masks in a single session, allowing for process optimization of large vs. small features in a single lithography.

The full field useable exposure area is limited to the intersection of a 31mm diameter circle and a rectangle of dimensions 22mm x 27mm. See the Mask Making Guidelines page for more info on exposure field sizes and how to order your mask plates.

Resists Used (see PhotoLith. Recipes for full process info):

  • UV210-0.3 - Positive: 300nm nominal thickness
  • UV6-0.8 - Positive: 800nm nominal thickness
  • UV26-2.5 - Positive: 2.5um nominal thickness
  • UVN2300-0.5 - Negative: 500nm nominal thickness
  • DUV42P-6/DS-K101 - Bottom Anti-Reflective Coatings “BARC”
  • PMGI/LOL1000/LOL2000 - Underlayers

AZ300MIF Developer for all processes

Process Information

  • Process Recipes Page > "Stepper 3" - Established recipes and corresponding linewidths, photoresists etc.
  • Sample size: 100 mm wafers with SEMI std. major flat
    • Piece-parts process is possible but difficult - contact staff for info
  • Alignment Accuracy: < 50 nm
  • Minimum Feature Size: ≤150 nm isolated lines, ≤200 nm dense patterns
  • Maximum Wafer Bow: approx. 100 µm. (4-inch diam.)
    • Near this value, and the job may fail or lose the wafer inside the machine due to wafer vacuum error.
  • UCSB Test Reticles - Alignment Markers, Resolution Testing etc.

Service Provider

Operating Procedures

Troubleshooting and Recovery