Lithography Recipes: Difference between revisions
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(→Chemicals Stocked + Datasheets: DSK-101 --> DSK-101-304) |
(→Lift-Off Techniques: added links to wiki version of lift-off tutorial + DUV lift-off page) |
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==General Information== |
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This page contains information and links to recipes/datasheets spin-coated materials used in the facility. In general, the following information is provided for the following materials: |
This page contains information and links to recipes/datasheets spin-coated materials used in the facility. In general, the following information is provided for the following materials: |
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*'''[[#PositivePR |Photoresists]]''': |
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**[[#Photolithography_Recipes |Photo Lithography Recipe section]]: Has links to nominal recipes (spin, bake, exposure, develop etc.) to provide the user with starting points are found in the. Substrate, surface materials, pattern size can often affect process parameters. |
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** |
**[[#PositivePR |Stocked Lithography Chemical + Datasheets]]: Lists all stocked photolith. chemicals, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes. |
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*'''[[#EBLPR |E-beam Lithography Resists]]''': Links to nominal recipes may be provided in the [[#E-Beam_Lithography_Recipes | E-Beam Lithography Recipe Section]]. Substrates and patterns play a large role in process parameters. [[#EBLPR | Datasheets]] provided for reference. |
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*'''[[#NanoImprinting |Nanoimprinting Resists]]''': Datasheets are provided. Any recipes provided are for use in the [[Nano-Imprint_(Nanonex_NX2000) | Nano-Imprint (Nanonex NX2000)]] system only and are found in the [[#Nanoimprinting_Recipes | Nanoimprinting Recipes section]]. |
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* |
*'''[[#Underlayers |Underlayers]]''': These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist. Datasheets are provided and some recipes are found in the [[#Lift-Off_Techniques | Lift-Off Techniques section]]. |
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*'''Holography''': For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square. Recipes for silicon substrates are provided in the [[#Holography_Recipes |Holography section]]. |
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*'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes. Recipes using these materials are found within the [[#Photolithography_Recipes |photoresist recipes]] themselves. Datasheets are provided for reference on use of the materials. |
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*'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]''': Used for resolution enhancement. Not for use in contact aligners. Recipes using these materials are found within the [[#Photolithography_Recipes |photoresist recipes]] themselves. Datasheets also provided. |
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*'''[[#AdhesionPromoters |Adhesion Promoters]]''': These are used to improve wetting of photoresists to your substrate. Datasheets are provided on use of these materials. |
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*'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''': Datasheets are provided for BCB, Photo-BCB, and SOG for reference on use. Some recipes are provided in the [[#Low-K_Spin-On_Dielectric_Recipes | Low-K Spin-On Dielectric Recipes section]]. |
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*'''[[#Developers |Developers and Removers]]''': Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching. Datasheets provided for reference. |
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==Photolithography Recipes== |
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{{Recipe Table Explanation}} |
{{Recipe Table Explanation}} |
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! colspan="9" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div> |
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! colspan="2" bgcolor="#D0E7FF" align="center" |'''[[Contact Alignment Recipes|Contact Aligners]]''' |
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! colspan="3" bgcolor="#D0E7FF" align="center" |'''[[Stepper Recipes|Steppers]]''' |
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! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' |
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{{LithRecipe Table}} |
{{LithRecipe Table}} |
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| bgcolor="EEFFFF" |[https://www.nanotech.ucsb.edu/wiki/index.php/Stepper_Recipes#Positive_Resist_.28ASML_DUV.29 R] |
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! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' |
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{{LithRecipe Table}} |
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{{LithRecipe Table}} |
{{LithRecipe Table}} |
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==E-Beam Lithography Recipes== |
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*Under Development. |
*Under Development. |
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==Nanoimprinting Recipes== |
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*{{fl|Thermal-Nanoimprint-Process-Tutorial-revA.pdf|Thermal Nanoimprint Process and Tutorial}} |
*{{fl|Thermal-Nanoimprint-Process-Tutorial-revA.pdf|Thermal Nanoimprint Process and Tutorial}} |
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*{{fl|Nanoinprint-Lithopgraphy-UV-Low-Pressure-Temperature-Ormostamp-PDMS-RevA.docx|UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process}} |
*{{fl|Nanoinprint-Lithopgraphy-UV-Low-Pressure-Temperature-Ormostamp-PDMS-RevA.docx|UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process}} |
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==Holography Recipes== |
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*{{fl|Holography_Process_for_1D-lines_and_2D-dots_(ARC-11_%26_THMR-IP3600HP-D)-updated-8-13-2018-A.pdf|Standard Holography Process - on SiO2 on Si}} |
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_(ARC-11_%26_THMR-IP3600HP-D)-updated-8-13-2018-A.pdf|Standard Holography Process - on SiO2 on Si}} |
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*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}} |
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}} |
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*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}} |
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}} |
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==Low-K Spin-On Dielectric Recipes== |
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*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}} |
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}} |
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*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}} |
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}} |
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*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}} |
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}} |
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==Lift-Off Techniques== |
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*{{fl|Liftoff-Techniques.pdf|Description/Tutorial}} |
*{{fl|Liftoff-Techniques.pdf|Description/Tutorial}} |
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*[[Lift-Off Tutorial|Lift-Off Tutorial and Limits]] |
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**How it works, process limits and considerations for designing your process |
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*[[Lift-Off with UV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]] |
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==Chemicals Stocked + Datasheets== |
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''The following is a list of the lithography chemicals we have available in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.'' |
''The following is a list of the lithography chemicals we have available in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.'' |
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;<div id="PositivePR"><big>Positive Photoresists</big></div> |
;<div id="PositivePR"><big>Positive Photoresists</big></div> |
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'''''i-line and broadband''''' |
'''''i-line and broadband''''' |
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*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}} |
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*{{fl| |
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}} |
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*{{fl| |
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}} |
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*{{fl| |
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}} |
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*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}} |
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*{{fl|THMR_iP_3500_iP3600.pdf|THMR-3600HP-1 (thin i-line and Holography)}} |
*{{fl|THMR_iP_3500_iP3600.pdf|THMR-3600HP-1 (thin i-line and Holography)}} |
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*{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|THMR-3600HP-2 (thin i-line and Holography)}} |
*{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|THMR-3600HP-2 (thin i-line and Holography)}} |
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*{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|THMR-3600HP-3 (thin i-line and Holography)}} |
*{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|THMR-3600HP-3 (thin i-line and Holography)}} |
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'''''DUV-248nm''''' |
'''''DUV-248nm''''' |
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*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}} |
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}} |
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*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}} |
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}} |
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*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}} |
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}} |
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;<div id="NegativePR"><big>Negative Photoresists</big></div> |
;<div id="NegativePR"><big>Negative Photoresists</big></div> |
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'''''i-line and broadband''''' |
'''''i-line and broadband''''' |
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*{{fl| |
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}} |
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*{{fl| |
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}} |
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*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}} |
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}} |
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*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}} |
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}} |
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*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}} |
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}} |
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*{{fl|SU-8-2075-revA.pdf|SU-8-2075}} |
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}} |
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'''''DUV-248nm''''' |
'''''DUV-248nm''''' |
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*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}} |
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}} |
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;<div id="Underlayers"><big>Underlayers</big></div> |
;<div id="Underlayers"><big>Underlayers</big></div> |
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*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}} |
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}} |
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*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}} |
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}} |
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;<div id="EBLPR"><big>E-beam resists</big></div> |
;<div id="EBLPR"><big>E-beam resists</big></div> |
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*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}} |
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}} |
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*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}} |
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}} |
||
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;<div id="NanoImprinting"><big>Nanoimprinting</big></div> |
;<div id="NanoImprinting"><big>Nanoimprinting</big></div> |
||
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}} |
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}} |
||
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}} |
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}} |
||
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}} |
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}} |
||
Line 283: | Line 301: | ||
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div> |
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div> |
||
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC (i-line)}} |
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC (i-line)}} |
||
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P (DUV) (For AR2 replacement)}} |
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P (DUV) (For AR2 replacement)}} |
||
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}} |
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}} |
||
Line 290: | Line 308: | ||
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div> |
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div> |
||
*HMDS |
*HMDS |
||
*AP3000 BCB Adhesion Promoter |
*AP3000 BCB Adhesion Promoter |
||
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}} |
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}} |
||
Line 300: | Line 318: | ||
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass'' |
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass'' |
||
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}} |
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}} |
||
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}} |
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}} |
||
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}} |
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}} |
||
Line 310: | Line 328: | ||
;<div id="Developers"><big>Developers</big></div> |
;<div id="Developers"><big>Developers</big></div> |
||
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}} |
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}} |
||
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}} |
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}} |
||
*DS2100 BCB Developer |
*DS2100 BCB Developer |
||
Line 320: | Line 338: | ||
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP] |
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP] |
||
** |
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}'' |
||
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}} |
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}} |
||
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}} |
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}} |
||
*AZ EBR ("Edge Bead Remover", PGMEA) |
*AZ EBR ("Edge Bead Remover", PGMEA) |
Revision as of 17:30, 6 September 2019
General Information
This page contains information and links to recipes/datasheets spin-coated materials used in the facility. In general, the following information is provided for the following materials:
- Photoresists:
- Photo Lithography Recipe section: Has links to nominal recipes (spin, bake, exposure, develop etc.) to provide the user with starting points are found in the. Substrate, surface materials, pattern size can often affect process parameters.
- Stocked Lithography Chemical + Datasheets: Lists all stocked photolith. chemicals, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.
- E-beam Lithography Resists: Links to nominal recipes may be provided in the E-Beam Lithography Recipe Section. Substrates and patterns play a large role in process parameters. Datasheets provided for reference.
- Nanoimprinting Resists: Datasheets are provided. Any recipes provided are for use in the Nano-Imprint (Nanonex NX2000) system only and are found in the Nanoimprinting Recipes section.
- Underlayers: These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist. Datasheets are provided and some recipes are found in the Lift-Off Techniques section.
- Holography: For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square. Recipes for silicon substrates are provided in the Holography section.
- Anti-Reflection Coatings: Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes. Recipes using these materials are found within the photoresist recipes themselves. Datasheets are provided for reference on use of the materials.
- Contrast Enhancement Materials (CEM): Used for resolution enhancement. Not for use in contact aligners. Recipes using these materials are found within the photoresist recipes themselves. Datasheets also provided.
- Adhesion Promoters: These are used to improve wetting of photoresists to your substrate. Datasheets are provided on use of these materials.
- Low-K Spin-on Dielectrics: Datasheets are provided for BCB, Photo-BCB, and SOG for reference on use. Some recipes are provided in the Low-K Spin-On Dielectric Recipes section.
- Developers and Removers: Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching. Datasheets provided for reference.
Photolithography Recipes
- R = Recipe is available. Clicking this link will take you to the recipe.
- A = Material is available for use, but no recipes are provided.
Photolithography Recipes
| ||||||||
---|---|---|---|---|---|---|---|---|
Contact Aligners | Steppers | |||||||
Positive Resists | SUSS MJB-3 | SUSS MA-6 | Stepper 1 (GCA 6300) |
Stepper 2 (AutoStep 200) |
Stepper 3 (ASML DUV) |
MLA150 (Heidelberg)
| ||
AZ4110 | R1 | R1 | A | A | ||||
AZ4210 | R1 | R1 | A | A | ||||
AZ4330RS | R1 | R1 | A | A | ||||
OCG 825-35CS | A | A | A | A | ||||
SPR 950-0.8 | A | A | A | A | ||||
SPR 955 CM-0.9 | A | R1 | R1 | R1 | ||||
SPR 955 CM-1.8 | A | A | R1 | R1 | ||||
SPR 220-3.0 | R1 | R1 | R1 | R1 | ||||
SPR 220-7.0 | R1 | R1 | R1 | R1 | ||||
THMR-IP3600 HP D | A | A | ||||||
UV6-0.8 | R | |||||||
UV210-0.3 | R | |||||||
UV26-2.5 | A | |||||||
Negative Resists | SUSS MJB-3 | SUSS MA-6 | Stepper 1 (GCA 6300) |
Stepper 2 (AutoStep 200) |
Stepper 3 (ASML DUV) |
MLA150 (Heidelberg)
| ||
AZ5214-EIR | R1 | R1 | R1 | R1 | ||||
AZnLOF 2020 | R1 | R1 | R1 | R1 | ||||
AZnLOF 2035 | A | A | A | A | ||||
AZnLOF 2070 | A | A | A | A | ||||
AZnLOF 5510 | A | A | R1 | R1 | ||||
UVN30-0.8 | R1 | |||||||
SU-8 2005,2010, 2015 | A | R1 | A | A | ||||
SU-8 2075 | A | A | A | A | ||||
NR9-1000,3000,6000PY | R1 | R1 | A | R1 | ||||
SUSS MJB-3 | SUSS MA-6 | Stepper 1 (GCA 6300) |
Stepper 2 (AutoStep 200) |
Stepper 3 (ASML DUV) |
MLA150 (Heidelberg)
|
E-Beam Lithography Recipes
- Under Development.
Nanoimprinting Recipes
- Thermal Nanoimprint Process and Tutorial
- UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process
Holography Recipes
- Standard Holography Process - on SiO2 on Si
- Holography Process Variations - Set-up Angle - Etching into SiO2 and Si
- Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width
- Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching
Low-K Spin-On Dielectric Recipes
Lift-Off Techniques
- Description/Tutorial
- Lift-Off Tutorial and Limits
- How it works, process limits and considerations for designing your process
- I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner
- DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer
Chemicals Stocked + Datasheets
The following is a list of the lithography chemicals we have available in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.