Lithography Recipes: Difference between revisions

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(→‎Lift-Off Techniques: added links to wiki version of lift-off tutorial + DUV lift-off page)
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**How it works, process limits and considerations for designing your process
**How it works, process limits and considerations for designing your process
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
*[[Lift-Off with UV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]


==Chemicals Stocked + Datasheets==
==Chemicals Stocked + Datasheets==

Revision as of 05:18, 7 September 2019

General Information

This page contains information and links to recipes/datasheets spin-coated materials used in the facility. In general, the following information is provided for the following materials:

  • Underlayers: These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist. Datasheets are provided and some recipes are found in the Lift-Off Techniques section.
  • Holography: For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square. Recipes for silicon substrates are provided in the Holography section.
  • Anti-Reflection Coatings: Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes. Recipes using these materials are found within the photoresist recipes themselves. Datasheets are provided for reference on use of the materials.
  • Contrast Enhancement Materials (CEM): Used for resolution enhancement. Not for use in contact aligners. Recipes using these materials are found within the photoresist recipes themselves. Datasheets also provided.
  • Adhesion Promoters: These are used to improve wetting of photoresists to your substrate. Datasheets are provided on use of these materials.

Photolithography Recipes

  • R = Recipe is available. Clicking this link will take you to the recipe.
  • A = Material is available for use, but no recipes are provided.


Photolithography Recipes

Contact Aligners Steppers
Positive Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)


AZ4110 R1 R1 A A
AZ4210 R1 R1 A A
AZ4330RS R1 R1 A A
OCG 825-35CS A A A A
SPR 950-0.8 A A A A
SPR 955 CM-0.9 A R1 R1 R1
SPR 955 CM-1.8 A A R1 R1
SPR 220-3.0 R1 R1 R1 R1
SPR 220-7.0 R1 R1 R1 R1
THMR-IP3600 HP D

A A
UV6-0.8 R
UV210-0.3 R
UV26-2.5 A
Negative Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)


AZ5214-EIR R1 R1 R1 R1
AZnLOF 2020 R1 R1 R1 R1
AZnLOF 2035 A A A A
AZnLOF 2070 A A A A
AZnLOF 5510 A A R1 R1
UVN30-0.8 R1
SU-8 2005,2010, 2015 A R1 A A
SU-8 2075 A A A A
NR9-1000,3000,6000PY R1 R1 A R1
SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)


E-Beam Lithography Recipes

  • Under Development.

Nanoimprinting Recipes

Holography Recipes

Low-K Spin-On Dielectric Recipes

Lift-Off Techniques

Chemicals Stocked + Datasheets

The following is a list of the lithography chemicals we have available in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.

Positive Photoresists

i-line and broadband

DUV-248nm


Negative Photoresists

i-line and broadband

DUV-248nm


Underlayers


E-beam resists


Nanoimprinting
Contrast Enhancement Materials


Anti-Reflection Coatings


Adhesion Promoters


Spin-On Dielectrics

Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass


Developers


Photoresist Removers