Difference between revisions of "SEM 1 (JEOL IT800SHL)"
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===Capabilities=== |
===Capabilities=== |
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The system has multiple detectors, detailed below. |
The system has multiple detectors, detailed below. |
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− | Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column) |
+ | Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings. |
− | The system can accept a 6” wafer, but only |
+ | The system can accept a 6” wafer, but only 140mm (X) and 80mm (Y) of the wafer is accessible with the stage movement. |
The [[SEM Sample Coater (Hummer)|'''<u>Hummer coater</u>''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR). |
The [[SEM Sample Coater (Hummer)|'''<u>Hummer coater</u>''']] is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR). |
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+ | |||
+ | This SEM also has an Electron-Beam Lithography Nabity system. Contact Aidan Hopkins for info. |
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==Detailed Specifications== |
==Detailed Specifications== |
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===Imaging=== |
===Imaging=== |
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− | {{comment|UPDATE THESE - from SEM2 page}} |
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*Resolution: |
*Resolution: |
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− | ** |
+ | **0.5nm at 15kV SHL mode |
− | ** |
+ | **0.7nm at 1kV |
− | ** |
+ | **0.9nm at 500V |
*Magnification: |
*Magnification: |
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− | ** |
+ | **Photo magnification: x10 to x2,000,000 (128mm x 96mm) |
− | ** |
+ | **Display magnification: x27 to x5,480,000 (1280pix x 960pix) |
− | *Imaging Modes |
+ | *Imaging Modes: |
+ | **STD: Standard |
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⚫ | |||
+ | **LDF: Large depth of focus |
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− | **LM: Low-magnification mode |
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− | ** |
+ | **BD: Beam deceleration |
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging). |
***Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging). |
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+ | **SHL: Super hybrid lens |
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− | **LABE: Low-Angle Backscatter Electron detector |
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+ | *Detectors |
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+ | **SED: Secondary electron detector (low angle) |
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+ | **UHD: Ultra high resolution detector |
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+ | **SBED: Scintillated back scatter electron detector |
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***Inserts between the objective lens and the sample |
***Inserts between the objective lens and the sample |
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+ | **LVBED: Low vacuum back scatter electron detector |
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− | ***Strong contrast between materials |
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⚫ | |||
− | **LEI: Lower Electron Detector |
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− | ***Detector is lower on chamber, creating strong topographical contrast. |
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*Accelerating Voltages: |
*Accelerating Voltages: |
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− | **SEM: 0. |
+ | **SEM: 0.01 to 30kV |
+ | *Probe currents |
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⚫ | |||
+ | **A few pA to 500nA (30kV) 100nA (5kV) |
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− | *Beam Currents: 10<sup>-13</sup> to 2x10<sup>-7</sup> A |
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⚫ | |||
− | |||
+ | **X: 140mm Y: 80mm |
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− | ===Mechanical=== |
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⚫ | |||
− | |||
+ | **Tilt: -5 to 70 degrees (depending on sample holder and offset) |
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− | *Max Sample Size: 4-inch wafer |
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⚫ | |||
− | *Stage movement: |
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− | **max: 70 x 50mm |
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− | **4-inch wafer: limited to ~25x25mm movement area from wafer center. |
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− | *Tilt: -5° to +70° |
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⚫ | |||
⚫ | |||
− | **Copper and XYZ Carbon tape available |
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− | **4-inch wafer with topside clips |
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− | **1-inch holder for 30°/90°, 45°/90° mounting with tape or clips. |
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==Operating Procedures== |
==Operating Procedures== |
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+ | |||
− | {{Todo|upload procedures - printouts available at the tool}} |
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+ | *J[https://wiki.nanofab.ucsb.edu/w/images/1/10/JEOL_IT800SHL_Operating_Procedure.docx EOL IT800SHL Operating Procedure]. |
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+ | *[https://www.youtube.com/watch?v=YeukVt1Fyi0 Optimizing Astigmatism (CalTech Nanoscience Institute)] |
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+ | **Stig is the most common cause of blurry images. |
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+ | **A Common mistake is to optimize stig on flat lines (eg. a cleaved edge or line/space features). This always leads to accidentally skewing the stig in the direction of the lines. Instead, make sure to optimize on a roundish feature, such as a piece of dust/debris. |
Revision as of 13:01, 16 May 2024
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About
The JEOL IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility.
Capabilities
The system has multiple detectors, detailed below. Low-vacuum mode reduces sample charging by introducing N2 gas into the chamber, without sacrificing imaging quality (using a special vacuum nozzle on the electron column). Both of these are useful for imaging low conductivity and insulating materials without the need for conductive layer coatings.
The system can accept a 6” wafer, but only 140mm (X) and 80mm (Y) of the wafer is accessible with the stage movement.
The Hummer coater is used to deposit a thin AuPd on your samples, to reduce electrical charging of insulating samples (such as SiO2 substrates, or thick >1µm layers of SiO2 or PR).
This SEM also has an Electron-Beam Lithography Nabity system. Contact Aidan Hopkins for info.
Detailed Specifications
Imaging
- Resolution:
- 0.5nm at 15kV SHL mode
- 0.7nm at 1kV
- 0.9nm at 500V
- Magnification:
- Photo magnification: x10 to x2,000,000 (128mm x 96mm)
- Display magnification: x27 to x5,480,000 (1280pix x 960pix)
- Imaging Modes:
- STD: Standard
- LDF: Large depth of focus
- BD: Beam deceleration
- Applies negative voltage to sample stage to increase effective acceleration without increasing beam acceleration (reducing charging).
- SHL: Super hybrid lens
- Detectors
- SED: Secondary electron detector (low angle)
- UHD: Ultra high resolution detector
- SBED: Scintillated back scatter electron detector
- Inserts between the objective lens and the sample
- LVBED: Low vacuum back scatter electron detector
- LVSED: Low vacuum secondary electron detector
- Accelerating Voltages:
- SEM: 0.01 to 30kV
- Probe currents
- A few pA to 500nA (30kV) 100nA (5kV)
- Specimen stage
- X: 140mm Y: 80mm
- Z: 6mm to 41mm
- Tilt: -5 to 70 degrees (depending on sample holder and offset)
- Rotation: 360 degrees
Operating Procedures
- JEOL IT800SHL Operating Procedure.
- Optimizing Astigmatism (CalTech Nanoscience Institute)
- Stig is the most common cause of blurry images.
- A Common mistake is to optimize stig on flat lines (eg. a cleaved edge or line/space features). This always leads to accidentally skewing the stig in the direction of the lines. Instead, make sure to optimize on a roundish feature, such as a piece of dust/debris.