Wafer Bonder (SUSS SB6-8E): Difference between revisions
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'''THIS TOOL IS NON-OPERATIONAL. Unable to be repaired at this time. 2024''' |
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=About= |
=About= |
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This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers. |
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers. |
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*Windows-based computer control |
*Windows-based computer control |
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*Wafer bonder currently set up for 4" wafers |
*Wafer bonder currently set up for 4" wafers |
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=Documentation= |
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*[https://wiki.nanofab.ucsb.edu/w/images/1/12/Bonder_Pressure_Rules_Vis_Aid.docx Bonder Pressure Rules Visual Aid] |
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*[https://wiki.nanofab.ucsb.edu/w/images/5/5c/Suss_Bonder_Recipe_Guidelines.docx Bonder Recipe Guidelines] |
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Latest revision as of 20:52, 10 December 2025
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THIS TOOL IS NON-OPERATIONAL. Unable to be repaired at this time. 2024
About
This is Karl-Suss model SB-6 substrate bonder. Wafer bonding of pieces to 6” wafers can be done at pressures from 5e-5 to 3e3 mBar and from 50°C to 550°C. This tool mates with the Karl-Suss MA-6 aligner to allow for aligned bonding. Forces up to 20 kN for a 150 mm wafer size are available. The system supports thermal compression as well as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipes and data. The system is configured for manual loading of wafers.
Detailed Specifications
- Wafer bonding from 50°C to 550°C, +/- 5 degrees accuracy, +/- 3% uniformity
- Upper and lower heating of samples
- 5e-5 to 3e3 Torr environment bonding pressure, with Nitrogen
- Sample size: pieces to 6” wafers, aligned bonding by using the MA/BA-6 aligner - contact supervisor for setup.
- Anodic bonding to 2000 V
- Windows-based computer control
- Wafer bonder currently set up for 4" wafers