Lithography Recipes: Difference between revisions

From UCSB Nanofab Wiki
Jump to navigation Jump to search
No edit summary
(Converted wall-of-text list into indented table of contents)
Line 1: Line 1:
==General Information==
==General Information==


This page contains information and links to recipes/datasheets spin-coated materials used in the facility. In general, the following information is provided for the following materials:
This page contains information and links to recipes/datasheets spin-coated materials used in the facility.


{| class="wikitable"
*'''[[#PositivePR |Photoresists]]''':
|+
**[[#Photolithography_Recipes |Photo Lithography Recipe section]]: Has links to nominal recipes (spin, bake, exposure, develop etc.) to provide the user with starting points are found in the. Substrate, surface materials, pattern size can often affect process parameters.
!Table of Contents
**[[#PositivePR |Stocked Lithography Chemical + Datasheets]]: Lists all stocked photolith. chemicals, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.
|-
*'''[[#EBLPR |E-beam Lithography Resists]]''': Links to nominal recipes may be provided in the [[#E-Beam_Lithography_Recipes | E-Beam Lithography Recipe Section]]. Substrates and patterns play a large role in process parameters. [[#EBLPR | Datasheets]] provided for reference.
|
*'''[[#NanoImprinting |Nanoimprinting Resists]]''': Datasheets are provided. Any recipes provided are for use in the [[Nano-Imprint_(Nanonex_NX2000) | Nano-Imprint (Nanonex NX2000)]] system only and are found in the [[#Nanoimprinting_Recipes | Nanoimprinting Recipes section]].
*'''[[#PositivePR |Photoresists]]'''
**[[#Photolithography_Recipes |Photo Lithography Recipe section]]
***''Has links to starting recipes (spin, bake, exposure, develop etc.).''
***''Substrate, surface materials, pattern size can often affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
**[[#PositivePR |Stocked Lithography Chemical + Datasheets]]
***''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
*'''[[#EBLPR |E-beam Lithography Resists]]'''
**[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
***''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
**[[#EBLPR |EBL Photoresist Datasheets]]
***''Provided for reference, also showing starting recipes and usage info.''
*'''[[#NanoImprinting |Nanoimprinting Resists]]'''
**''Datasheets are provided with starting recipes and usage info.''
**''Recipes provided are for use in the [[Nano-Imprint_(Nanonex_NX2000) |Nano-Imprint (Nanonex NX2000)]] system only.''


*'''[[#Underlayers |Underlayers]]'''
*'''[[#Underlayers |Underlayers]]''': These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist. Datasheets are provided and some recipes are found in the [[#Lift-Off_Techniques | Lift-Off Techniques section]].
**''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
*'''Holography''': For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square. Recipes for silicon substrates are provided in the [[#Holography_Recipes |Holography section]].
**''Datasheets are provided.''
*'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes. Recipes using these materials are found within the [[#Photolithography_Recipes |photoresist recipes]] themselves. Datasheets are provided for reference on use of the materials.
*[[#Lift-Off_Techniques |'''Lift-Off Techniques''']]
*'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]''': Used for resolution enhancement. Not for use in contact aligners. Recipes using these materials are found within the [[#Photolithography_Recipes |photoresist recipes]] themselves. Datasheets also provided.
**''Verified Recipes for lift-off using various photolith. tools''
*'''[[#AdhesionPromoters |Adhesion Promoters]]''': These are used to improve wetting of photoresists to your substrate. Datasheets are provided on use of these materials.
**''General educational description of this technique and it's limitations/considerations.''
*'''[[Lithography Recipes#Holography Recipes|Holography]]'''
**''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
**''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
*'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
**[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
**''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
**''Datasheets are provided for reference on use of the materials.''
*'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
**[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
**''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
**''Datasheets provided with usage info.''
*'''[[#AdhesionPromoters |Adhesion Promoters]]'''
**''These are used to improve wetting of photoresists to your substrate.''
**''Datasheets are provided on use of these materials.''


*'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''': Datasheets are provided for BCB, Photo-BCB, and SOG for reference on use. Some recipes are provided in the [[#Low-K_Spin-On_Dielectric_Recipes | Low-K Spin-On Dielectric Recipes section]].
*'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
**[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
*'''[[#Developers |Developers and Removers]]''': Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching. Datasheets provided for reference.
***''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
**[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
***''Recipes for usage of some spin-on dielectrics.''
*'''[[#Developers |Developers and Removers]]'''
**''Datasheets provided for reference.''
**''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
|}


==Photolithography Recipes==
==Photolithography Recipes==
Line 28: Line 64:
|- bgcolor="#D0E7FF"
|- bgcolor="#D0E7FF"
|<!-- INTENTIONALLY LEFT BLANK --><br>
|<!-- INTENTIONALLY LEFT BLANK --><br>
! colspan="2" bgcolor="#D0E7FF" align="center" |'''[[Contact Alignment Recipes|Contact Aligners]]'''
! colspan="2" bgcolor="#D0E7FF" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
! colspan="3" bgcolor="#D0E7FF" align="center" |'''[[Stepper Recipes|Steppers]]'''
! colspan="3" bgcolor="#D0E7FF" align="center" |'''[[Stepper Recipes|<big>Steppers Recipes</big>]]'''



|-
|-
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
{{LithRecipe Table}}
{{LithRecipe Table}}


|-
|-
| bgcolor="#D0E7FF" align="center" |AZ4110
| bgcolor="#D0E7FF" align="center" |AZ4110
Line 140: Line 173:
| bgcolor="EEFFFF" |
| bgcolor="EEFFFF" |
| bgcolor="EEFFFF" |A
| bgcolor="EEFFFF" |A



|-
|-
! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
! bgcolor="#D0E7FF" align="center" |'''Negative Resists'''
{{LithRecipe Table}}
{{LithRecipe Table}}

|- bgcolor="EEFFFF"
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |AZ5214-EIR
| bgcolor="#D0E7FF" align="center" |AZ5214-EIR
Line 217: Line 248:
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|
|



|-
|-
! bgcolor="#D0E7FF" align="center" | '''Anti-Reflection Coatings'''
! bgcolor="#D0E7FF" align="center" | '''Anti-Reflection Coatings'''
{{LithRecipe Table}}
{{LithRecipe Table}}
|- bgcolor="EEFFFF"
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |DUV42-P
| bgcolor="#D0E7FF" align="center" |DUV42-P
Line 240: Line 269:


|-
|-
! bgcolor="#D0E7FF" align="center" | ''' '''
! bgcolor="#D0E7FF" align="center" |
{{LithRecipe Table}}
{{LithRecipe Table}}

|}
|}
<!-- end Litho Recipes table -->
<!-- end Litho Recipes table -->

Revision as of 21:01, 17 June 2020

General Information

This page contains information and links to recipes/datasheets spin-coated materials used in the facility.

Table of Contents
  • Underlayers
    • These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.
    • Datasheets are provided.
  • Lift-Off Techniques
    • Verified Recipes for lift-off using various photolith. tools
    • General educational description of this technique and it's limitations/considerations.
  • Holography
    • For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.
    • Recipes for silicon substrates are provided, and have been translated to other substrates by users.
  • Anti-Reflection Coatings:
    • The Photoresist Recipes section contains recipes using these materials.
    • Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.
    • Datasheets are provided for reference on use of the materials.
  • Contrast Enhancement Materials (CEM)
    • The Photoresist Recipes section contains recipes using these materials.
    • Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.
    • Datasheets provided with usage info.
  • Adhesion Promoters
    • These are used to improve wetting of photoresists to your substrate.
    • Datasheets are provided on use of these materials.

Photolithography Recipes

  • R = Recipe is available. Clicking this link will take you to the recipe.
  • A = Material is available for use, but no recipes are provided.


Photolithography Recipes

Contact Aligner Recipes Steppers Recipes
Positive Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)
AZ4110 R1 R1 A A
AZ4210 R1 R1 A A
AZ4330RS R1 R1 A A
OCG 825-35CS A A A A
SPR 950-0.8 A A A A
SPR 955 CM-0.9 A R1 R1 R1
SPR 955 CM-1.8 A A R1 R1
SPR 220-3.0 R1 R1 R1 R1
SPR 220-7.0 R1 R1 R1 R1
THMR-IP3600 HP D

A A
UV6-0.8 R1
UV210-0.3 R1
UV26-2.5 A
Negative Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)
AZ5214-EIR R1 R1 R1 R1
AZnLOF 2020 R1 R1 R1 R1
AZnLOF 2035 A A A A
AZnLOF 2070 A A A A
AZnLOF 5510 A A R1 R1
UVN30-0.8 R1
SU-8 2005,2010, 2015 A R1 A A
SU-8 2075 A A A A
NR9-1000,3000,6000PY R1 R1 A R1
Anti-Reflection Coatings SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)
DUV42-P R1
DS-K101-304 R1
SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)

E-Beam Lithography Recipes

  • Under Development.

Automated Coat/Develop System Recipes (S-Cubed Flexi)

Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

To Be Added

Nanoimprinting Recipes

Holography Recipes

Low-K Spin-On Dielectric Recipes

Lift-Off Techniques

Chemicals Stocked + Datasheets

The following is a list of the lithography chemicals we have available in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.

Positive Photoresists

i-line and broadband

DUV-248nm


Negative Photoresists

i-line and broadband

DUV-248nm


Underlayers


E-beam resists


Nanoimprinting
Contrast Enhancement Materials


Anti-Reflection Coatings


Adhesion Promoters


Spin-On Dielectrics

Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass


Developers


Photoresist Removers