Atomic Layer Deposition Recipes

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Atomic Layer Deposition (Oxford FlexAL)

Al₂O₃ deposition (ALD CHAMBER 3)

• Al₂O₃ 300
• Al₂O₃ 300 Saturated
• Al₂O₃ plasma 300C
• Al₂O₃ 100

AlN deposition (ALD CHAMBER 3)

• AlN 300

HfO₂ deposition (ALD CHAMBER 3)

• HfO₂ 100
• HfO₂ 300

Pt deposition (ALD CHAMBER 1)

(Platinum)

• Ch1_TMCpPt+O3-300C: Pt deposition rate ~ 0.5-0.6A/cyc
• recipe utilizes the ozone generator which must be first set to the following conditions: O2 flow = 250sccm, O3 concentration = 15 wt%
• Conductivity data: (to be added soon)

Ru deposition (ALD CHAMBER 1)

(Ruthenium)

• Ch1_Ex03Ru[HPbub]+O2-300C: Ru deposition rate ~ 0.65A/cyc.
• Conductivity data: (to be added soon)

SiO₂ deposition (ALD CHAMBER 3)

• SiO₂ 100
• SiO₂ 300

ZnO deposition (ALD CHAMBER 1)

• Ch1_DEZ/TMA+H2O-200C (Al dose fraction = 5%): ZnO deposition rate ~ 1.7A/cyc, resistivity ~ 4200uOhm.cm (390A film)

ZrO₂ deposition (ALD CHAMBER 3)

• ZrO₂ 300

TiO₂ deposition (ALD CHAMBER 3)

• Ch3_TDMAT+H2O-300C: TiO₂ deposition rate ~ 0.6A/cyc
• Note: deposition shows parasitic growth (via CVD channel) if H2O purge/pump times are not sufficient.

TiN deposition (ALD CHAMBER 3)

• Ch3_TDMAT+N*/H*-300C: TiN deposition rate ~ 0.7A/cyc
• Conductivity data: (to be added soon)