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...0.1C-1.0C/min. Maximum temperature is 200C. There is a N2 purge to provide a dry intert atmosphere during use. |super2= Aidan Hopkins

|super2= Aidan Hopkins Each oven has a temperature that is set by staff only.

|super2= Aidan Hopkins ...to be programmed for a series of custom temperature ramps and holds, with a maximum temperature of 350°C. It is not actively cooled.

|email = hopkins@ece.ucsb.edu ...2017 Aidan became the Facility Staff Manager. Aidan transitioned back to a Senior Development Engineer in 2022.

|super2= Aidan Hopkins ...ieces to 4-inch wafers. It can be programmed to scan multiple locations on a single wafer or 3D areas topography.

|super= Aidan Hopkins ...L IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility.

|super= Aidan Hopkins ...ng the 6.55 um range). The lateral resolution is limited by the tip shape. A video camera with variable magnification allows for manual placement of the

|super= Aidan Hopkins ...ken with normal incidence reflection of white light from the surface using a Deuterium (UV) and Halogen (Vis-nIR) lamps.

|super= Aidan Hopkins ...L IT800HSL Field Emission Scanning Electron Microscope is used for imaging a variety of samples made in the facility.

|super2= Aidan Hopkins ...imes, but the ramp rate is only "low/med./high" (not an exact ramp rate). A manual needle valve for nitrogen purge has been installed on the back of th

|super= Aidan Hopkins ...aneously measures the optical transmission and reflection spectrum through a thin-film. Subsequent software analysis allows the user to calculate absorb

|super2= Aidan Hopkins ...g. This technique allows bonding temperatures to be lowered and is used as a companion tool to the Karl-Suss SB6 wafer bond tool.

|super= Aidan Hopkins ...l as anodic bonding (up to 2000 V). The system is computer controlled with a windows environment allowing for multiple recipe steps and saving of recipe

|super2= Aidan Hopkins The Molecular Vapor deposition system is used for deposition of a monolayer-thick fluorocarbon film for producing extremely hydrophobic surfa

|super= Aidan Hopkins ...ranges from 108x - 17,280x satisfy the needs of today's researchers. For a complete description of the tool and its capabilities, please see the above

|super2= Aidan Hopkins ...ases, although it can be used to etch As- and Sb-based III-V compounds and a variety of II-VI semiconductors as well. For Al-containing compounds and II

|super= Aidan Hopkins ..., and other general metalizations. The maximum deposition thickness during a run is limited to 1 micron.

|super= Aidan Hopkins ...t consistent, highest resolution AFM imaging technique that can be used on a wide range of sample types.

|super = Aidan Hopkins ...ection spectra between 400-900nm optical wavelengths (Vis to Near-IR) with a regular halogen microscope light source. The Filmetrics software then perfo

|super2= Aidan Hopkins ...l, adjustable cathode-anode spacing, fixed DC bias or RF power control and a HeNe laser etch monitor with chart recorder. It is turbo pumped and has no