Lithography Recipes

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Table of Contents

Photolithography Processes

  1. UV Optical Lithography
  2. General Photolithography Techniques
    • Techniques for improving litho. or solving common photolith. problems.
  3. Lift-Off Recipes
    • Verified Recipes for lift-off using various photolith. tools
    • General educational description of this technique and it's limitations/considerations.
  4. E-beam Lithography
  5. Holography
    • For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.
    • Recipes for silicon substrates are provided, and have been translated to other substrates by users.
    • Datasheets are provided with starting recipes and usage info.
  6. Edge-Bead Removal
    • Edge photoresist removal methods needed for clamp-based etchers
    • Improves resolution for contact lithography

Photolithography Chemicals/Materials

  1. Underlayers
    • These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.
    • Datasheets are provided.
  2. Anti-Reflection Coatings:
    • The Photoresist Recipes section contains recipes using these materials.
    • Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.
    • Datasheets are provided for reference on use of the materials.
  3. Contrast Enhancement Materials (CEM)
    • The Photoresist Recipes section contains recipes using these materials.
    • Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.
    • Datasheets provided with usage info.
  4. Adhesion Promoters
    • These are used to improve wetting of photoresists to your substrate.
    • Datasheets are provided on use of these materials.
  5. Low-K Spin-on Dielectrics
  6. Developers and Removers
    • Datasheets provided for reference.
    • Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.

General Photolithography Techniques

HMDS Process for Improving Adhesion

  • Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.

Edge-Bead Removal Techniques

  • These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).
  • For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the Maskless Aligner, EBR can help with autofocus issues.

Photoresist reflow (MicroChem)

  • To create slanted sidewalls or curved surfaces.

Photolithography Recipes

  • R: Recipe is available. Clicking this link will take you to the recipe.
  • A: Material is available for use, but no recipes are provided.

Click the tool title to go to recipes for that tool.

Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.

Photolithography Recipes
Contact Aligner Recipes Stepper Recipes Direct-Write Litho. Recipes
Positive Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)
AZ4110 R1 R1 A A R1
AZ4210 R1 R1 A A A
AZ4330RS R1 R1 A A R1
AZ4620 A A A A A
OCG 825-35CS A A A A A
SPR 955 CM-0.9 A R1 R1 R1 R1
SPR 955 CM-1.8 A A R1 R1 A
SPR 220-3.0 R1 R1 R1 R1 R1
SPR 220-7.0 R1 R1 R1 R1 R1
THMR-IP3600 HP D A A R1
UV6-0.8 R1
UV210-0.3 R1
UV26-2.5 A
Negative Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)
AZ5214-EIR R1 R1 R1 R1 R1
AZnLOF 2020 R1 R1 R1 R1 R1
AZnLOF 2035 A A A A A
AZnLOF 2070 A A A A A
AZnLOF 5510 A A R1 R1 A
UVN30-0.8 R1
SU-8 2005,2010,2015 A R1 A A A
SU-8 2075 A A A A R1
NR9-1000,3000,6000PY R1 R1 A R1 A
Anti-Reflection Coatings SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)
XHRiC-11 A A A
DUV42-P R1
DS-K101-304 R1
SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300)
Stepper 2
(AutoStep 200)
Stepper 3
(ASML DUV)
MLA150
(Heidelberg)

Lift-Off Recipes

E-Beam Lithography Recipes (JEOL JBX-6300FS)

  • Under Development.

FIB Lithography Recipes (Raith Velion)

To Be Added

Automated Coat/Develop System Recipes (S-Cubed Flexi)

Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

Available Variations

  • We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves.
  • DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
  • DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
  • "Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".

Recipes Table (S-Cubed Flexi)

Ask Staff if you need a new recipe.
Coating Material Route/Chain Name: (User: "UCSB Users") Spin Speed (krpm) Bake Temp Notes
BEFORE LITHOGRAPHY (PR Coat and Bake)
Hotplate Set Route To pre-set the DSK Hotplate temp (HP4).

Note: Only HP4 can be changed. HP1-HP3 remains fixed. HP1=135°C, HP2=170°C & HP3=170°C

HP4-SET-220C 220°C Will over shoot +-2°C when done.
HP4-SET-210C 210°C
HP4-SET-200C 200°C
HP4-SET-185C 185°C
DS-K101 Route DSK101 Develop Rate depends on Bake temp - you can use this to control undercut. See: DSK Bake vs. Dev rate

DSK101 spun at 1.5K is equivalent to DUV-42P. See: Stepper Recipes#Anti-Reflective Coatings

Note: All PR coat recipes have EBR backside clean steps included in the recipe.

1.5krpm recipes COAT-DSK101-304[1.5K]-185C 1.5krpm 185°C Requires: HP4=185°C,
COAT-DSK101-304[1.5K]-200C 1.5krpm 200°C Requires: HP4=200°C
COAT-DSK101-304[1.5K]-210C 1.5krpm 210°C Requires: HP4=210°C
COAT-DSK101-304[1.5K]-220C 1.5krpm 220°C Requires: HP4=220°C,
5krpm recipes COAT-DSK101-304[5K]-185C 5.0krpm 185°C Requires: HP4=185°C,
COAT-DSK101-304[5K]-200C 5.0krpm 200°C Requires: HP4=200°C
COAT-DSK101-304[5K]-210C 5.0krpm 210°C Requires: HP4=210°C
COAT-DSK101-304[5K]-220C 5.0krpm 220°C Requires: HP4=220°C,
UV6-0.8 Route COAT-UV6[2K]-135C 2.0krpm 135°C Requires: HP1=135°C
varying spin speed COAT-UV6[2.5K]-135C 2.5krpm 135°C Requires: HP1=135°C
COAT-UV6[3K]-135C 3.0krpm 135°C Requires: HP1=135°C
COAT-UV6[3.5K]-135C 3.5krpm 135°C Requires: HP1=135°C
COAT-UV6[4K]-135C 4.0krpm 135°C Requires: HP1=135°C
COAT-UV6[5K]-135C 5.0krpm 135°C Requires: HP1=135°C
COAT-UV6[6K]-135C 6.0krpm 135°C Requires: HP1=135°C
UV6 Coat with Developable BARC underlayer:
DS-K101 @ 185°C

+ UV6

Chain COAT-DSK101[1.5K]-185C-UV6[2K]-135C DSK: 1.5krpm

UV6: 2.0krpm

DSK: 185°C

UV6: 135°C

Requires:

– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.

1.5krpm DSK recipes with

UV6- various spin speeds

COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C DSK: 1.5krpm

UV6: 2.5krpm

same as above same as above
COAT-DSK101[1.5K]-185C-UV6[3K]-135C DSK: 1.5krpm

UV6: 3.0krpm

same as above same as above
COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C DSK: 1.5krpm

UV6: 3.5krpm

same as above same as above
COAT-DSK101[1.5K]-185C-UV6[4K]-135C DSK: 1.5krpm

UV6: 4.0krpm

same as above same as above
COAT-DSK101[1.5K]-185C-UV6[5K]-135C DSK: 1.5krpm

UV6: 5.0krpm

same as above same as above
COAT-DSK101[1.5K]-185C-UV6[6K]-135C DSK: 1.5krpm

UV6: 6.0krpm

same as above same as above
5krpm DSK recipes with

UV6- various spin speeds

COAT-DSK101[5K]-185C-UV6[2K]-135C DSK: 5krpm

UV6: 2.0krpm

same as above same as above
COAT-DSK101[5K]-185C-UV6[2.5K]-135C DSK: 5krpm

UV6: 2.5krpm

same as above same as above
COAT-DSK101[5K]-185C-UV6[3K]-135C DSK: 5krpm

UV6: 3.0krpm

same as above same as above
COAT-DSK101[5K]-185C-UV6[3.5K]-135C DSK: 5krpm

UV6: 3.5krpm

same as above same as above
COAT-DSK101[5K]-185C-UV6[4K]-135C DSK: 5krpm

UV6: 4.0krpm

same as above same as above
COAT-DSK101[5K]-185C-UV6[5K]-135C DSK: 5krpm

UV6: 5.0krpm

same as above same as above
COAT-DSK101[5K]-185C-UV6[6K]-135C DSK: 5krpm

UV6: 6.0krpm

same as above same as above
UV6 Coat with Dry-Etchable BARC underlayer:
DS-K101 @ 220°C

+ UV6

Chain COAT-DSK101[1.5K]-220C-UV6[2K]-135C DSK: 1.5krpm

UV6: 2.0krpm

DSK: 220°C

UV6: 135°C

Requires:

– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.

1.5krpm DSK recipes with

UV6- various spin speeds

COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C DSK: 1.5krpm

UV6: 2.5krpm

same as above same as above
COAT-DSK101[1.5K]-220C-UV6[3K]-135C DSK: 1.5krpm

UV6: 3.0krpm

same as above same as above
COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C DSK: 1.5krpm

UV6: 3.5krpm

same as above same as above
COAT-DSK101[1.5K]-220C-UV6[4K]-135C DSK: 1.5krpm

UV6: 4.0krpm

same as above same as above
COAT-DSK101[1.5K]-220C-UV6[5K]-135C DSK: 1.5krpm

UV6: 5.0krpm

same as above same as above
COAT-DSK101[1.5K]-220C-UV6[6K]-135C DSK: 1.5krpm

UV6: 6.0krpm

same as above same as above
5krpm DSK recipes with

UV6- various spin speeds

COAT-DSK101[5K]-220C-UV6[2K]-135C DSK: 5krpm

UV6: 2.0krpm

same as above same as above
COAT-DSK101[5K]-220C-UV6[2.5K]-135C DSK: 5krpm

UV6: 2.5krpm

same as above same as above
COAT-DSK101[5K]-220C-UV6[3K]-135C DSK: 5krpm

UV6: 3.0krpm

same as above same as above
COAT-DSK101[5K]-220C-UV6[3.5K]-135C DSK: 5krpm

UV6: 3.5krpm

same as above same as above
COAT-DSK101[5K]-220C-UV6[4K]-135C DSK: 5krpm

UV6: 4.0krpm

same as above same as above
COAT-DSK101[5K]-220C-UV6[5K]-135C DSK: 5krpm

UV6: 5.0krpm

same as above same as above
COAT-DSK101[5K]-220C-UV6[6K]-135C DSK: 5krpm

UV6: 6.0krpm

same as above same as above
AFTER LITHOGRAPHY (PEB and Developing)
PEB Wafer Bake Route To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec
BAKE-135C-90S 135°C Requires: HP1=135°C
PEB and Developing Route To bake wafer with UV6 after exposure (PEB) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec

WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE

Varying developer time BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S Developer chuck: 300rpm 135°C Requires: HP1=135°C
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S same as above same as above same as above
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S same as above same as above same as above
Developing Route To only develop wafer using AZ300MIF and water rinse 60sec

WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE

Varying developer time DEV[MIF300]-SPIN[300RPM]-10S Developer chuck: 300rpm 135°C Requires: HP1=135°C
DEV[MIF300]-SPIN[300RPM]-15S same as above same as above same as above
DEV[MIF300]-SPIN[300RPM]-20S same as above same as above same as above

Holography Recipes

The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.

Low-K Spin-On Dielectric Recipes

Chemicals Stocked + Datasheets

The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.

Positive Photoresists

i-line and broadband

DUV-248nm

Negative Photoresists

i-line and broadband

DUV-248nm

Underlayers
E-beam resists
Nanoimprinting
Contrast Enhancement Materials
Anti-Reflection Coatings
Adhesion Promoters
Spin-On Dielectrics

Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass

Developers
Photoresist Removers