Lithography Recipes

Table of Contents
Photolithography Processes UV Optical Lithography Stocked Lithography Chemical + Datasheets Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes. Photo Lithography Recipe section Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools. Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution. Contact Aligner Recipes Suss MJB Aligners Suss MA6 Stepper Recipes Stepper #1: GCA 6300 (I-Line) Stepper #2: GCA Autostep 200 (I-Line) Stepper #3: ASML PAS 5500/300 (DUV) Direct-Write Recipes Heidelberg MLA150 JEOL JBX-6300FS EBL Raith Velion FIB Automated Coater Recipes (S-Cubed Flexi) General Photolithography Techniques Techniques for improving litho. or solving common photolith. problems. Lift-Off Recipes Verified Recipes for lift-off using various photolith. tools General educational description of this technique and it's limitations/considerations. E-beam Lithography E-Beam Lithography Recipes Has links to starting recipes. Substrates and patterns play a large role in process parameters. EBL Photoresist Datasheets Provided for reference, also showing starting recipes and usage info. Holography For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square. Recipes for silicon substrates are provided, and have been translated to other substrates by users. Datasheets are provided with starting recipes and usage info. Edge-Bead Removal Edge photoresist removal methods needed for clamp-based etchers Improves resolution for contact lithography
Photolithography Chemicals/Materials Underlayers These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist. Datasheets are provided. Anti-Reflection Coatings: The Photoresist Recipes section contains recipes using these materials. Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes. Datasheets are provided for reference on use of the materials. Contrast Enhancement Materials (CEM) The Photoresist Recipes section contains recipes using these materials. Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers. Datasheets provided with usage info. Adhesion Promoters These are used to improve wetting of photoresists to your substrate. Datasheets are provided on use of these materials. Low-K Spin-on Dielectrics Spin-On Dielectrics Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use. Low-K Spin-On Dielectric Recipes Recipes for usage of some spin-on dielectrics. Developers and Removers Datasheets provided for reference. Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.

General Photolithography Techniques

HMDS Process for Improving Adhesion

• Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.

Edge-Bead Removal Techniques

• These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).
• For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the Maskless Aligner, EBR can help with autofocus issues.

Photoresist reflow (MicroChem)

• To create slanted sidewalls or curved surfaces.

Photolithography Recipes

• R: Recipe is available. Clicking this link will take you to the recipe.
• A: Material is available for use, but no recipes are provided.

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level	Description of Process Level Ranking
A	Process Allowed and materials available but never done
R1	Process has been run at least once
R2	Process has been run and/or procedure is documented or/and data available
R3	Process has been run, procedure is documented, and data is available
R4	Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5	Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6	Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available

Click the tool title to go to recipes for that tool.

Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.

Photolithography Recipes
	Contact Aligner Recipes		Stepper Recipes			Direct-Write Litho. Recipes
Positive Resists	SUSS MJB-3	SUSS MA-6	Stepper 1 (GCA 6300)	Stepper 2 (AutoStep 200)	Stepper 3 (ASML DUV)	MLA150 (Heidelberg)
AZ4110	R1	R1	A	A		R1
AZ4210	R1	R1	A	A		A
AZ4330RS	R1	R1	A	A		R1
AZ4620	A	A	A	A		A
OCG 825-35CS	A	A	A	A		A
SPR 955 CM-0.9	A	R1	R4	R5		R4
SPR 955 CM-1.8	A	A	R4	R4		A
SPR 220-3.0	R1	R1	R4	R4		R1
SPR 220-7.0	R1	R1	R4	R4		R1
THMR-IP3600 HP D			A	A		R1
UV6-0.8					R5
UV210-0.3					R1
UV26-2.5					A
Negative Resists	SUSS MJB-3	SUSS MA-6	Stepper 1 (GCA 6300)	Stepper 2 (AutoStep 200)	Stepper 3 (ASML DUV)	MLA150 (Heidelberg)
AZ5214-EIR	R1	R1	R1	R1		R1
AZnLOF 2020	R1	R1	R4	R4		R4
AZnLOF 2035	A	A	A	A		A
AZnLOF 2070	A	A	R2	A		A
AZnLOF 5510	A	A	R1	R1		A
UVN30-0.8					R6
SU-8 2005,2010,2015	A	R1	A	A		A
SU-8 2075	A	A	A	A		R1
NR9-1000,3000,6000PY	R1	R1	A	R4		A
Anti-Reflection Coatings	SUSS MJB-3	SUSS MA-6	Stepper 1 (GCA 6300)	Stepper 2 (AutoStep 200)	Stepper 3 (ASML DUV)	MLA150 (Heidelberg)
XHRiC-11			A	A		A
DUV42-P					R3
DS-K101-304					R3
	SUSS MJB-3	SUSS MA-6	Stepper 1 (GCA 6300)	Stepper 2 (AutoStep 200)	Stepper 3 (ASML DUV)	MLA150 (Heidelberg)

Lift-Off Recipes

• Lift-Off Description/Tutorial
  • How it works, process limits and considerations for designing your process
• I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer
  • Single Expose/Develop process for simplicity
  • Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.
  • Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)
• I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner
  • Multiple processes for Metal thicknesses ~800nm to ~2.5µm
  • Uses multiple DUV Flood exposure/develop cycles to create undercut.
  • Can be transferred to other I-Line litho tools (Stepper, MLA etc.)
• DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer
  • Single-expose/develop process
  • Up to ~65nm metal thickness & ~350nm gap between metal
  • Use thicker PMGI for thicker metals

E-Beam Lithography Recipes (JEOL JBX-6300FS)

• Under Development.

FIB Lithography Recipes (Raith Velion)

To Be Added

Automated Coat/Develop System Recipes (S-Cubed Flexi)

Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

Available Variations

• We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. Note that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
• DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
• DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
• "Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
• Developer recipes are now available for 300 MiF Developer. Note that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
  • DO NOT EDIT developer recipes, they can damage the tool when programmed incorrectly!
• "Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
• ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.

Recipes Table (S-Cubed Flexi)

Ask Staff if you need a new recipe.

Coating Material	Route/Chain	Name: (User: "UCSB Users")	Spin Speed (krpm)	Bake Temp	Notes
BEFORE LITHOGRAPHY (PR Coat and Bake)
Hotplate Set	Route	To pre-set the DSK Hotplate temp (HP4). Note: Only HP4 can be changed. HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C
		HP4-SET-220C		220°C	Will over shoot +-2°C when done.
		HP4-SET-210C		210°C
		HP4-SET-200C		200°C
		HP4-SET-185C		185°C
Bottom Anti-Reflection Coating (BARC), DSK101 only:
DS-K101	Route	DSK101 Develop Rate depends on Bake temp - you can use this to control undercut. See: DSK Bake vs. Dev rate DSK101 spun at 1.5K is equivalent to DUV-42P. See: Stepper Recipes#Anti-Reflective Coatings 185°C bake allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features) 220°C bake allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See here for relevant processing info from DUV42P. Note: All PR coat recipes have EBR backside clean steps included in the recipe.
1.5krpm recipes		COAT-DSK101-304[1.5K]-185C	1.5krpm	185°C	Requires: HP4=185°C,
		COAT-DSK101-304[1.5K]-200C	1.5krpm	200°C	Requires: HP4=200°C
		COAT-DSK101-304[1.5K]-210C	1.5krpm	210°C	Requires: HP4=210°C
		COAT-DSK101-304[1.5K]-220C	1.5krpm	220°C	Requires: HP4=220°C,
5krpm recipes		COAT-DSK101-304[5K]-185C	5.0krpm	185°C	Requires: HP4=185°C,
		COAT-DSK101-304[5K]-200C	5.0krpm	200°C	Requires: HP4=200°C
		COAT-DSK101-304[5K]-210C	5.0krpm	210°C	Requires: HP4=210°C
		COAT-DSK101-304[5K]-220C	5.0krpm	220°C	Requires: HP4=220°C,
Imaging resist (UV6) only:
UV6-0.8	Route	COAT-UV6[2K]-135C	2.0krpm	135°C	Requires: HP1=135°C
varying spin speed		COAT-UV6[2.5K]-135C	2.5krpm	135°C	Requires: HP1=135°C
		COAT-UV6[3K]-135C	3.0krpm	135°C	Requires: HP1=135°C
		COAT-UV6[3.5K]-135C	3.5krpm	135°C	Requires: HP1=135°C
		COAT-UV6[4K]-135C	4.0krpm	135°C	Requires: HP1=135°C
		COAT-UV6[5K]-135C	5.0krpm	135°C	Requires: HP1=135°C
		COAT-UV6[6K]-135C	6.0krpm	135°C	Requires: HP1=135°C
UV6 Coat with Developable BARC underlayer:
DS-K101 @ 185°C + UV6	Chain	COAT-DSK101[1.5K]-185C-UV6[2K]-135C	DSK: 1.5krpm UV6: 2.0krpm	DSK: 185°C UV6: 135°C	Requires: – HP4=185°C – HP1=135°C Plan for ~10-15 min per wafer.
1.5krpm DSK recipes with UV6- various spin speeds		COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C	DSK: 1.5krpm UV6: 2.5krpm	same as above	same as above
		COAT-DSK101[1.5K]-185C-UV6[3K]-135C	DSK: 1.5krpm UV6: 3.0krpm	same as above	same as above
		COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C	DSK: 1.5krpm UV6: 3.5krpm	same as above	same as above
		COAT-DSK101[1.5K]-185C-UV6[4K]-135C	DSK: 1.5krpm UV6: 4.0krpm	same as above	same as above
		COAT-DSK101[1.5K]-185C-UV6[5K]-135C	DSK: 1.5krpm UV6: 5.0krpm	same as above	same as above
		COAT-DSK101[1.5K]-185C-UV6[6K]-135C	DSK: 1.5krpm UV6: 6.0krpm	same as above	same as above
5krpm DSK recipes with UV6- various spin speeds		COAT-DSK101[5K]-185C-UV6[2K]-135C	DSK: 5krpm UV6: 2.0krpm	same as above	same as above
		COAT-DSK101[5K]-185C-UV6[2.5K]-135C	DSK: 5krpm UV6: 2.5krpm	same as above	same as above
		COAT-DSK101[5K]-185C-UV6[3K]-135C	DSK: 5krpm UV6: 3.0krpm	same as above	same as above
		COAT-DSK101[5K]-185C-UV6[3.5K]-135C	DSK: 5krpm UV6: 3.5krpm	same as above	same as above
		COAT-DSK101[5K]-185C-UV6[4K]-135C	DSK: 5krpm UV6: 4.0krpm	same as above	same as above
		COAT-DSK101[5K]-185C-UV6[5K]-135C	DSK: 5krpm UV6: 5.0krpm	same as above	same as above
		COAT-DSK101[5K]-185C-UV6[6K]-135C	DSK: 5krpm UV6: 6.0krpm	same as above	same as above
UV6 Coat with Dry-Etchable BARC underlayer:
DS-K101 @ 220°C + UV6	Chain	COAT-DSK101[1.5K]-220C-UV6[2K]-135C	DSK: 1.5krpm UV6: 2.0krpm	DSK: 220°C UV6: 135°C	Requires: – HP4=220°C – HP1=135°C Plan for ~10-15 min per wafer.
1.5krpm DSK recipes with UV6- various spin speeds		COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C	DSK: 1.5krpm UV6: 2.5krpm	same as above	same as above
		COAT-DSK101[1.5K]-220C-UV6[3K]-135C	DSK: 1.5krpm UV6: 3.0krpm	same as above	same as above
		COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C	DSK: 1.5krpm UV6: 3.5krpm	same as above	same as above
		COAT-DSK101[1.5K]-220C-UV6[4K]-135C	DSK: 1.5krpm UV6: 4.0krpm	same as above	same as above
		COAT-DSK101[1.5K]-220C-UV6[5K]-135C	DSK: 1.5krpm UV6: 5.0krpm	same as above	same as above
		COAT-DSK101[1.5K]-220C-UV6[6K]-135C	DSK: 1.5krpm UV6: 6.0krpm	same as above	same as above
5krpm DSK recipes with UV6- various spin speeds		COAT-DSK101[5K]-220C-UV6[2K]-135C	DSK: 5krpm UV6: 2.0krpm	same as above	same as above
		COAT-DSK101[5K]-220C-UV6[2.5K]-135C	DSK: 5krpm UV6: 2.5krpm	same as above	same as above
		COAT-DSK101[5K]-220C-UV6[3K]-135C	DSK: 5krpm UV6: 3.0krpm	same as above	same as above
		COAT-DSK101[5K]-220C-UV6[3.5K]-135C	DSK: 5krpm UV6: 3.5krpm	same as above	same as above
		COAT-DSK101[5K]-220C-UV6[4K]-135C	DSK: 5krpm UV6: 4.0krpm	same as above	same as above
		COAT-DSK101[5K]-220C-UV6[5K]-135C	DSK: 5krpm UV6: 5.0krpm	same as above	same as above
		COAT-DSK101[5K]-220C-UV6[6K]-135C	DSK: 5krpm UV6: 6.0krpm	same as above	same as above
AFTER LITHOGRAPHY (PEB and Developing)
PEB Wafer Bake	Route	To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec
		BAKE-135C-90S		135°C	Requires: HP1=135°C
PEB and Developing	Route	To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec WARNING: DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
Varying developer time		BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S	Developer chuck: 300rpm	135°C	Requires: HP1=135°C
		BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S	same as above	same as above	same as above
		BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S	same as above	same as above	same as above
		BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-25S	same as above	same as above	same as above
		BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-30S	same as above	same as above	same as above
		BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-35S	same as above	same as above	same as above
		BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-40S	same as above	same as above	same as above
		BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-45S	same as above	same as above	same as above
Developing	Route	To only develop wafer using AZ300MIF and water rinse 60sec (No PEB) WARNING: DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
Varying developer time		DEV[MIF300]-SPIN[300RPM]-10S	Developer chuck: 300rpm	135°C	Requires: HP1=135°C
		DEV[MIF300]-SPIN[300RPM]-15S	same as above	same as above	same as above
		DEV[MIF300]-SPIN[300RPM]-20S	same as above	same as above	same as above
		DEV[MIF300]-SPIN[300RPM]-25S	same as above	same as above	same as above
		DEV[MIF300]-SPIN[300RPM]-30S	same as above	same as above	same as above
		DEV[MIF300]-SPIN[300RPM]-35S	same as above	same as above	same as above
		DEV[MIF300]-SPIN[300RPM]-40S	same as above	same as above	same as above
		DEV[MIF300]-SPIN[300RPM]-45S	same as above	same as above	same as above

Holography Recipes

The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.

• Standard Holography Process - on SiO2 on Si
• Holography Process Variations - Set-up Angle - Etching into SiO2 and Si
• Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width
• Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching

Low-K Spin-On Dielectric Recipes

• Photo BCB (4024-40)
• Standard BCB (3022-46)
• SOG (T512B)

Chemicals Stocked + Datasheets

The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.

Positive Photoresists i-line and broadband AZP4000 (AZ4110, AZ4210, AZ4330) AZ P4620 OCG825 SPR220 (SPR220-3, SPR220-7) SPR955CM (SPR955CM-0.9, SPR955CM-1.8) THMR-3600HP (Thin I-Line & Holography) Evaluation Results: THMR-3600HP Spin Curves for THMR-3600HP Safety Datasheet for THMR-3600HP DUV-248nm UV210-0.3 UV6-0.8 UV26-2.5 Negative Photoresists i-line and broadband AZ5214 AZnLOF5510 AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070) Futurrex NR9-1000PY(use AZ300MIF dev) Futurrex NR9-3000PY(use AZ300MIF dev) Futurrex NR9-6000PY(use AZ300MIF dev) SU-8-2005,2010, 2015 SU-8-2075 DUV-248nm UVN-30-0.8 Underlayers PMGI (PMGI SF3,5,8,11,15) Shipley LOL2000 E-beam resists PMMA (PMMA, P(MMA-MAA) copolymer) maN 2403 Nanoimprinting NX1020 MRI-7020 MR-UVCur21 Ormostamp

Contrast Enhancement Materials CEM365iS Anti-Reflection Coatings XHRiC-11 (i-line) DUV42P-6 (DUV) (For AR2 replacement) DS-K101-304 (DUV developable BARC) Adhesion Promoters HMDS AP3000 BCB Adhesion Promoter Omnicoat, SU-8 Adhesion Promoter Ormoprime08-Ormostsmp Adhesion Promoter Spin-On Dielectrics Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass BCB, Cyclotene 3022-46(Not Photosensitive) PhotoBCB, Cyclotene 4024-40(Negative Polarity) BCB Adhesion Notes from Vendor BCB rework Notes from Vendor Spin-on-Glass, Honeywell 512B (Not Photosensitive) Honeywell 512B Apps Data Developers AZ400K (AZ400K, AZ400K1:4) AZ300MIF DS2100 BCB Developer SU-8 Developer 101A Developer (for DUV Flood Exposed PMGI) Photoresist Removers AZ NMP This replaces 1165 AZ300T Remover PG, SU-8 stripper AZ EBR ("Edge Bead Remover", PGMEA)