Lithography Recipes: Difference between revisions
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__NOTOC__ |
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== General Information == |
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{| class="wikitable" |
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!Table of Contents |
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==='''<big>Photolithography Processes</big>'''=== |
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#'''UV Optical Lithography''' |
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This page contains information and links to recipes/datasheets spin-coated materials used in the facility. In general, the following information is provided for the following materials: |
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#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']] |
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#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.'' |
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#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']] |
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#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.'' |
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#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.'' |
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#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]] |
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#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]] |
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#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]] |
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#**[[Stepper Recipes|<u>Stepper Recipes</u>]] |
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#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line) |
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#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line) |
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#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV) |
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#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]] |
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#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]] |
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#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]] |
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#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]] |
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#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]] |
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#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']] |
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#*''Techniques for improving litho. or solving common photolith. problems.'' |
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#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]''' |
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#*''Verified Recipes for lift-off using various photolith. tools'' |
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#*''General educational description of this technique and it's limitations/considerations.'' |
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#'''E-beam Lithography''' |
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#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]] |
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#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.'' |
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#*[[#EBLPR |EBL Photoresist Datasheets]] |
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#**''Provided for reference, also showing starting recipes and usage info.'' |
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#'''[[Lithography Recipes#Holography Recipes|Holography]]''' |
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#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.'' |
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#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.'' |
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#*''Datasheets are provided with starting recipes and usage info.'' |
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#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]''' |
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#*''Edge photoresist removal methods needed for clamp-based etchers'' |
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#*''Improves resolution for contact lithography'' |
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|- |
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| |
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==='''<big>Photolithography Chemicals/Materials</big>'''=== |
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* [[#PositivePR | Photoresists]]: Links to nominal recipes to provide the user with starting points are found in the Photo Lithography Recipe section. Substrate, surface materials, pattern size can often affect process parameters. Datasheets provided for reference. |
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* [[#EBLPR | E-beam Lithography Resists]]: Links to nominal recipes may be provided in the E-Beam Lithography Recipe Section. Substrates and patterns play a large role in process parameters. Datasheets provided for reference. |
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* [[#Underlayers | Underlayers]]: These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist. Datasheets are provided and some recipes are found in the Lift-Off Techniques section. |
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* [[#NanoImprinting | Nanoimprinting Resists]]: Datasheets are provided. Any recipes provided are for use in the Nanonex NX2000 system only and are found in the Nanoimprint section. |
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* Holography: For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square. Recipe on silicon provided in the holography section. |
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* [[#AntiReflectionCoatings | Anti-Reflection Coatings]]: These are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes. Recipes using these materials are found within the photoresist recipes themselves. Datasheets are provided for reference on use of the materials. |
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* [[#ContrastEnhancement | Contrast Enhancement Materials (CEM)]]: Used for resolution enhancement. Not for use in contact aligners. Recipes using these materials are found within the photoresist recipes themselves. Datasheets also provided. |
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* [[#AdhesionPromoters | Adhesion Promoters]]: Datasheets are provided on use of these materials. |
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* [[#BCBandSOG | Low-K Spin-on Dielectrics]]: Datasheets are provided for BCB, Photo-BCB, and SOG for reference on use. Some recipes are provided in the Low-K section. |
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* [[#Developers | Developers and Removers]]: Datasheets provided for reference. |
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#'''[[#Underlayers |Underlayers]]''' |
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== Lift-Off Techniques == |
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#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.'' |
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#*''Datasheets are provided.'' |
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#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''': |
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#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials. |
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#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.'' |
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#*''Datasheets are provided for reference on use of the materials.'' |
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#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]''' |
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#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials. |
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#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.'' |
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#*''Datasheets provided with usage info.'' |
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#'''[[#AdhesionPromoters |Adhesion Promoters]]''' |
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#*''These are used to improve wetting of photoresists to your substrate.'' |
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#*''Datasheets are provided on use of these materials.'' |
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#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]''' |
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#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]] |
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#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.'' |
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#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]] |
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#**''Recipes for usage of some spin-on dielectrics.'' |
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#'''[[#Developers |Developers and Removers]]''' |
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#*''Datasheets provided for reference.'' |
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#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.'' |
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|} |
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==General Photolithography Techniques== |
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*{{fl|Liftoff-Techniques.pdf|Description/Tutorial}} |
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*{{fl|Bi-LayerContactprocesswithPMGI.pdf|Bi-Layer Process with PMGI Underlayer and Contact Aligner}} |
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====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]==== |
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== Chemical Datasheets == |
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*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.'' |
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====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]==== |
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*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).'' |
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*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.'' |
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====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']==== |
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*''To create slanted sidewalls or curved surfaces.'' |
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==Photolithography Recipes== |
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*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small> |
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*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small> |
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==='''Process Ranking Table'''=== |
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Processes in the table above are ranked by their "''Process Maturity Level''" as follows: |
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{| class="wikitable" |
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!Process Level |
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! colspan="11" |Description of Process Level Ranking |
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|- |
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|A |
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| colspan="11" |Process '''A'''llowed and materials available but never done |
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|- |
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|R1 |
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| colspan="11" |Process has been run at least once |
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|- |
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|R2 |
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| colspan="11" |Process has been run and/or procedure is documented or/and data available |
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|- |
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|R3 |
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| colspan="11" |Process has been run, procedure is documented, and data is available |
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|- |
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|R4 |
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| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available |
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|- |
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|R5 |
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| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available |
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|- |
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|R6 |
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| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available |
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|} |
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''Click the tool title to go to recipes for that tool.'' |
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''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].'' |
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{| class="wikitable" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" border="1" |
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|- |
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! colspan="7" height="45" |<div style="font-size: 150%;">Photolithography Recipes</div> |
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|- |
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| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK --> |
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! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]''' |
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! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]''' |
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! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]] |
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|- |
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! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists''' |
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{{LithRecipe Table}} |
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|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --> |
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| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]] |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}} |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
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|A |
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|A |
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| |
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|{{rl|MLA_Recipes|Positive Resist (MLA 150)}} |
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|-<!-- This is a White row color --> |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210] |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}} |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
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|A |
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|A |
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| |
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|A |
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|- bgcolor="EEFFFF" |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4330RS] |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
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|A |
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|A |
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| |
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|{{rl|MLA_Recipes|Positive Resist (MLA 150)}} |
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|- |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/a2/Az_p4620_photoresist_data_package.pdf AZ4620] |
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|A |
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|A |
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|A |
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|A |
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| |
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|A |
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|- bgcolor="EEFFFF" |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/8b/OCG825-Positive-Resist-Datasheet.pdf OCG 825-35CS] |
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|A |
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|A |
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|A |
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|A |
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| |
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|A |
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|- bgcolor="EEFFFF" |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-0.9] |
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|A |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
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|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}} |
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|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}} |
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| |
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|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}} |
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|- |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8] |
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|A |
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|A |
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|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}} |
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|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}} |
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| |
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|A |
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|- bgcolor="EEFFFF" |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0] |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
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|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}} |
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|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}} |
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| |
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|{{rl|MLA Recipes|Positive Resist (MLA 150)}} |
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|- |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-7.0] |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
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|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}} |
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|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}} |
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| |
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|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}} |
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|- bgcolor="EEFFFF" |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/be/3600_D%2C_D2v_Spin_Speed_Curve.pdf THMR-IP3600 HP D] |
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| |
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| |
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|A |
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|A |
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| |
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|{{rl|MLA Recipes|Positive Resist (MLA 150)}} |
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|- |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8] |
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| |
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|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}} |
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| |
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|- bgcolor="EEFFFF" |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/ff/UV210-Positive-Resist-Datasheet.pdf UV210-0.3] |
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| |
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| |
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| |
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| |
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|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}} |
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| |
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|- |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/UV26-Positive-Resist-Datasheet.pdf UV26-2.5] |
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|A |
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|- bgcolor="EEFFFF" |
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! bgcolor="#D0E7FF" align="center" |'''Negative Resists''' |
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{{LithRecipe Table}} |
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|- |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/b/b0/AZ5214-Negative-Resist-Datasheet.pdf AZ5214-EIR] |
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|{{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}} |
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|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}} |
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|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}} |
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|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}} |
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| |
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|{{rl|MLA Recipes|Negative Resist (MLA 150)}} |
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|- bgcolor="EEFFFF" |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2020] |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
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|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}} |
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|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}} |
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|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}} |
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| |
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|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}} |
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|- |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035] |
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| bgcolor="EEFFFF" |A |
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| bgcolor="EEFFFF" |A |
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| bgcolor="EEFFFF" |A |
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| bgcolor="EEFFFF" |A |
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| bgcolor="EEFFFF" | |
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| bgcolor="EEFFFF" |A |
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|- bgcolor="EEFFFF" |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2070] |
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|A |
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|A |
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|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}} |
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|A |
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| |
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|A |
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|- |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/8/82/AZnLOF5510-Negative-Resist-Datasheet.pdf AZnLOF 5510] |
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|A |
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|A |
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|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}} |
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|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}} |
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| |
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|A |
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|- bgcolor="EEFFFF" |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/c/c9/UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf UVN30-0.8] |
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| |
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|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}} |
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| |
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|- |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/7/78/SU-8-2015-revA.pdf SU-8 2005,2010,2015] |
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|A |
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|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}} |
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|A |
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|A |
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| |
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|A |
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|- bgcolor="EEFFFF" |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/2c/SU-8-2075-revA.pdf SU-8 2075] |
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|A |
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|A |
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|A |
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|A |
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| |
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|{{rl|MLA Recipes|Negative Resist (MLA 150)}} |
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|- |
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| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
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|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
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|A |
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|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}} |
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| |
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|A |
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|- bgcolor="EEFFFF" |
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! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings''' |
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{{LithRecipe Table}} |
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|- |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11] |
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| |
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|A |
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|A |
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| |
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|A |
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|- bgcolor="EEFFFF" |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P] |
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|{{rl|Stepper Recipes|DUV-42P-6|R3}} |
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|- |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304] |
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|{{rl|Stepper Recipes|DS-K101-304|R3}} |
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|- |
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! bgcolor="#D0E7FF" align="center" | |
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{{LithRecipe Table}} |
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|} |
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<!-- end Litho Recipes table --> |
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==Lift-Off Recipes== |
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*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}} |
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**How it works, process limits and considerations for designing your process |
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*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]] |
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**''Single Expose/Develop process for simplicity'' |
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**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.'' |
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**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)'' |
|||
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}} |
|||
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm'' |
|||
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.'' |
|||
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)'' |
|||
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]] |
|||
**''Single-expose/develop process'' |
|||
**''Up to ~65nm metal thickness & ~350nm gap between metal'' |
|||
**''Use thicker PMGI for thicker metals'' |
|||
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]== |
|||
*Under Development. |
|||
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]== |
|||
''To Be Added'' |
|||
==[[Automated Coat/Develop System (S-Cubed Flexi)|Automated Coat/Develop System Recipes (S-Cubed Flexi)]]== |
|||
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info. |
|||
===Available Variations=== |
|||
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed. |
|||
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes. |
|||
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required). |
|||
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes". |
|||
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so <u>develop times are shorter by ~50%</u> compared to beaker developing. |
|||
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly! |
|||
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made. |
|||
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done. |
|||
===Recipes Table (S-Cubed Flexi)=== |
|||
{| class="wikitable" |
|||
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.'' |
|||
|'''''<u>Coating Material</u>''''' |
|||
|'''''<u>Route/Chain</u>''''' |
|||
|'''''<u>Name</u>''': (User: "UCSB Users")'' |
|||
|'''''<u>Spin Speed (krpm)</u>''''' |
|||
|'''''<u>Bake Temp</u>''''' |
|||
|'''''<u>Notes</u>''''' |
|||
|- |
|||
! colspan="6" | |
|||
|- |
|||
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake) |
|||
|- |
|||
! colspan="6" | |
|||
|- |
|||
|'''''Hotplate Set''''' |
|||
|Route |
|||
| colspan="4" |To pre-set the DSK Hotplate temp (HP4). |
|||
Note: Only HP4 can be changed. |
|||
HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C |
|||
|- |
|||
| |
|||
| |
|||
|HP4-SET-'''220C''' |
|||
| |
|||
|220°C |
|||
|Will over shoot +-2°C when done. |
|||
|- |
|||
| |
|||
| |
|||
|HP4-SET-'''210C''' |
|||
| |
|||
|210°C |
|||
| |
|||
|- |
|||
| |
|||
| |
|||
|HP4-SET-'''200C''' |
|||
| |
|||
|200°C |
|||
| |
|||
|- |
|||
| |
|||
| |
|||
|HP4-SET-'''185C''' |
|||
| |
|||
|185°C |
|||
| |
|||
|- |
|||
| colspan="6" |'''<u>''Bottom Anti-Reflection Coating (BARC), DSK101 only:''</u>''' |
|||
|- |
|||
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]''''' |
|||
|Route |
|||
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]'' |
|||
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]] |
|||
'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features) |
|||
'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]]. |
|||
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.''' |
|||
|- |
|||
|''<u>1.5krpm</u> recipes'' |
|||
| |
|||
|COAT-DSK101-304[1.5K]-'''185C''' |
|||
|1.5krpm |
|||
|185°C |
|||
|Requires: HP4=185°C, |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101-304[1.5K]-'''200C''' |
|||
|1.5krpm |
|||
|200°C |
|||
|Requires: HP4=200°C |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101-304[1.5K]-'''210C''' |
|||
|1.5krpm |
|||
|210°C |
|||
|Requires: HP4=210°C |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101-304[1.5K]-'''220C''' |
|||
|1.5krpm |
|||
|220°C |
|||
|Requires: HP4=220°C, |
|||
|- |
|||
| colspan="6" | |
|||
|- |
|||
|''<u>5krpm</u> recipes'' |
|||
| |
|||
|COAT-DSK101-304[5K]-'''185C''' |
|||
|5.0krpm |
|||
|185°C |
|||
|Requires: HP4=185°C, |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101-304[5K]-'''200C''' |
|||
|5.0krpm |
|||
|200°C |
|||
|Requires: HP4=200°C |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101-304[5K]-'''210C''' |
|||
|5.0krpm |
|||
|210°C |
|||
|Requires: HP4=210°C |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101-304[5K]-'''220C''' |
|||
|5.0krpm |
|||
|220°C |
|||
|Requires: HP4=220°C, |
|||
|- |
|||
| colspan="6" |'''<u>''Imaging resist (UV6) only:''</u>''' |
|||
|- |
|||
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]''''' |
|||
|Route |
|||
|COAT-UV6['''2K''']-135C |
|||
|2.0krpm |
|||
|135°C |
|||
|Requires: HP1=135°C |
|||
|- |
|||
|''varying spin speed'' |
|||
| |
|||
|COAT-UV6['''2.5K''']-135C |
|||
|2.5krpm |
|||
|135°C |
|||
|Requires: HP1=135°C |
|||
|- |
|||
| |
|||
| |
|||
|COAT-UV6['''3K''']-135C |
|||
|3.0krpm |
|||
|135°C |
|||
|Requires: HP1=135°C |
|||
|- |
|||
| |
|||
| |
|||
|COAT-UV6['''3.5K''']-135C |
|||
|3.5krpm |
|||
|135°C |
|||
|Requires: HP1=135°C |
|||
|- |
|||
| |
|||
| |
|||
|COAT-UV6['''4K''']-135C |
|||
|4.0krpm |
|||
|135°C |
|||
|Requires: HP1=135°C |
|||
|- |
|||
| |
|||
| |
|||
|COAT-UV6['''5K''']-135C |
|||
|5.0krpm |
|||
|135°C |
|||
|Requires: HP1=135°C |
|||
|- |
|||
| |
|||
| |
|||
|COAT-UV6['''6K''']-135C |
|||
|6.0krpm |
|||
|135°C |
|||
|Requires: HP1=135°C |
|||
|- |
|||
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>''''' |
|||
|- |
|||
|'''''DS-K101 @ 185°C''''' |
|||
'''''+ UV6''''' |
|||
|Chain |
|||
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 2.0krpm |
|||
|DSK: 185°C |
|||
UV6: 135°C |
|||
|Requires: |
|||
– HP4=185°C |
|||
– HP1=135°C |
|||
Plan for ~10-15 min per wafer. |
|||
|- |
|||
|''<u>1.5krpm DSK</u> recipes with'' |
|||
''UV6- various spin speeds'' |
|||
| |
|||
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 2.5krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 3.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 3.5krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 4.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 5.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 6.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| colspan="6" | |
|||
|- |
|||
|''<u>5krpm DSK</u> recipes with'' |
|||
''UV6- various spin speeds'' |
|||
| |
|||
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 2.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 2.5krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 3.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 3.5krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 4.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 5.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 6.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>''' |
|||
|- |
|||
|'''''DS-K101 @ 220°C''''' |
|||
'''''+ UV6''''' |
|||
|Chain |
|||
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 2.0krpm |
|||
|DSK: 220°C |
|||
UV6: 135°C |
|||
|Requires: |
|||
– HP4=220°C |
|||
– HP1=135°C |
|||
Plan for ~10-15 min per wafer. |
|||
|- |
|||
|''<u>1.5krpm DSK</u> recipes with'' |
|||
''UV6- various spin speeds'' |
|||
| |
|||
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 2.5krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 3.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 3.5krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 4.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 5.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 6.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| colspan="6" | |
|||
|- |
|||
|''<u>5krpm DSK</u> recipes with'' |
|||
''UV6- various spin speeds'' |
|||
| |
|||
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 2.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 2.5krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 3.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 3.5krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 4.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 5.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 6.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
! colspan="6" | |
|||
|- |
|||
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing) |
|||
|- |
|||
! colspan="6" | |
|||
|- |
|||
|'''''PEB Wafer Bake''''' |
|||
|Route |
|||
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec |
|||
|- |
|||
| |
|||
| |
|||
|BAKE-135C-90S |
|||
| |
|||
|135°C |
|||
|Requires: HP1=135°C |
|||
|- |
|||
| colspan="6" | |
|||
|- |
|||
|'''''PEB and Developing''''' |
|||
|Route |
|||
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec |
|||
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!) |
|||
|- |
|||
|''Varying developer time'' |
|||
| |
|||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S''' |
|||
|Developer chuck: 300rpm |
|||
|135°C |
|||
|Requires: HP1=135°C |
|||
|- |
|||
| |
|||
| |
|||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| colspan="6" | |
|||
|- |
|||
|'''Developing''' |
|||
|Route |
|||
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB) |
|||
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!) |
|||
|- |
|||
|''Varying developer time'' |
|||
| |
|||
|DEV[MIF300]-SPIN[300RPM]-'''10S''' |
|||
|Developer chuck: 300rpm |
|||
|135°C |
|||
|Requires: HP1=135°C |
|||
|- |
|||
| |
|||
| |
|||
|DEV[MIF300]-SPIN[300RPM]-'''15S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|DEV[MIF300]-SPIN[300RPM]-'''20S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|DEV[MIF300]-SPIN[300RPM]-'''25S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|DEV[MIF300]-SPIN[300RPM]-'''30S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|DEV[MIF300]-SPIN[300RPM]-'''35S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|DEV[MIF300]-SPIN[300RPM]-'''40S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|DEV[MIF300]-SPIN[300RPM]-'''45S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
| |
|||
| |
|||
| |
|||
| |
|||
|} |
|||
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]== |
|||
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.'' |
|||
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}} |
|||
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}} |
|||
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}} |
|||
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}} |
|||
==Low-K Spin-On Dielectric Recipes== |
|||
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}} |
|||
*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}} |
|||
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}} |
|||
==Chemicals Stocked + Datasheets== |
|||
''The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.'' |
|||
{| |
{| |
||
|- valign="top" |
|- valign="top" |
||
| width="400" | |
| width="400" | |
||
;<div id="PositivePR"><big>Positive Photoresists</big></div> |
;<div id="PositivePR"><big>Positive Photoresists</big></div> |
||
'''''i-line and broadband''''' |
'''''i-line and broadband''''' |
||
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}} |
|||
*{{fl| |
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}} |
||
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}} |
|||
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}} |
|||
*{{fl| |
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}} |
||
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}} |
|||
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}} |
*{{fl|SPR955-Positive-Resist-Datasheet.pdf|SPR955CM (SPR955CM-0.9, SPR955CM-1.8)}} |
||
* |
*THMR-3600HP (Thin I-Line & Holography) |
||
*{{fl| |
**{{fl|THMR_iP_3500_iP3600.pdf|Evaluation Results: THMR-3600HP}} |
||
*{{fl| |
**{{fl|3600_D,_D2v_Spin_Speed_Curve.pdf|Spin Curves for THMR-3600HP}} |
||
**{{fl|THMR-iP3600_HP_D_20140801_(B)_GHS_US.pdf|Safety Datasheet for THMR-3600HP}} |
|||
'''''DUV-248nm''''' |
'''''DUV-248nm''''' |
||
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}} |
|||
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}} |
|||
*{{fl|PEK-162-Positive-Resist-Datasheet.pdf|PEK-162C1}} |
|||
*{{fl|UV210-Positive-Resist-Datasheet.pdf|UV210-0.3}} |
|||
*{{fl|UV6-Positive-Resist-Datasheet.pdf|UV6-0.8}} |
|||
*{{fl|UV26-Positive-Resist-Datasheet.pdf|UV26-2.5}} |
|||
;<div id="NegativePR"><big>Negative Photoresists</big></div> |
;<div id="NegativePR"><big>Negative Photoresists</big></div> |
||
'''''i-line and broadband''''' |
'''''i-line and broadband''''' |
||
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}} |
|||
*{{fl| |
*{{fl|AZ5214-Negative-Resist-Datasheet.pdf|AZ5214}} |
||
*{{fl| |
*{{fl|AZnLOF5510-Negative-Resist-Datasheet.pdf|AZnLOF5510}} |
||
*{{fl|AZnLOF2020-Negative-Resist-Datasheet.pdf|AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070)}} |
|||
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}} |
*{{fl|NR9-1000PY-revA.pdf|Futurrex NR9-1000PY(use AZ300MIF dev)}} |
||
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}} |
*{{fl|NR9-3000PY-revA.pdf|Futurrex NR9-3000PY(use AZ300MIF dev)}} |
||
Line 50: | Line 1,011: | ||
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}} |
*{{fl|SU-8-2015-revA.pdf|SU-8-2005,2010, 2015}} |
||
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}} |
*{{fl|SU-8-2075-revA.pdf|SU-8-2075}} |
||
'''''DUV-248nm''''' |
'''''DUV-248nm''''' |
||
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30}} |
|||
*{{fl|UVN-30_-_Negative-Resist-Datasheet_-_Apr_2004.pdf|UVN-30-0.8}} |
|||
;<div id="Underlayers"><big>Underlayers</big></div> |
;<div id="Underlayers"><big>Underlayers</big></div> |
||
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}} |
*{{fl|PMGI-Underlayer-Datasheet.pdf|PMGI (PMGI SF3,5,8,11,15)}} |
||
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}} |
*{{fl|LOL2000-Underlayer-Datasheet.pdf|Shipley LOL2000}} |
||
;<div id="EBLPR"><big>E-beam resists</big></div> |
;<div id="EBLPR"><big>E-beam resists</big></div> |
||
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}} |
*{{fl|PMMA-E-Beam-Resist-Datasheet.pdf|PMMA (PMMA, P(MMA-MAA) copolymer)}} |
||
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}} |
*{{fl|maN2403-E-Beam-Resist-Datasheet.pdf|maN 2403}} |
||
;<div id="NanoImprinting"><big>Nanoimprinting</big></div> |
;<div id="NanoImprinting"><big>Nanoimprinting</big></div> |
||
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}} |
*{{fl|NX1020-Nanoimprinting-Datasheet.pdf|NX1020}} |
||
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}} |
*{{fl|MRI-7020-Nanoimprinting-Datasheet.pdf|MRI-7020}} |
||
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}} |
*{{fl|Mr-UVCur21.pdf|MR-UVCur21}} |
||
Line 77: | Line 1,037: | ||
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}} |
*{{fl|CEM365iS-Contrast-Enhancement-Datasheet.pdf|CEM365iS}} |
||
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div> |
;<div id="AntiReflectionCoatings"><big>Anti-Reflection Coatings</big></div> |
||
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC (i-line)}} |
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}} |
||
*{{fl| |
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}} |
||
*{{fl| |
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}} |
||
*{{fl|DS-K101-Anti-Reflective-Coating.pdf|DS-K101 (DUV developable BARC)}} |
|||
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div> |
;<div id="AdhesionPromoters"><big>Adhesion Promoters</big></div> |
||
*HMDS |
*HMDS |
||
*AP3000 BCB Adhesion Promoter |
*AP3000 BCB Adhesion Promoter |
||
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}} |
*{{fl|OMNICOAT-revA.pdf|Omnicoat, SU-8 Adhesion Promoter}} |
||
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}} |
*{{fl|OrmoPrime-NIL-Adhesion-RevA.pdf|Ormoprime08-Ormostsmp Adhesion Promoter}} |
||
;<div id="SpinOnDielectrics"><big>Spin-On Dielectrics</big></div> |
|||
''Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass'' |
|||
;<div id="BCBandSOG"><big>BCB and SOG</big></div> |
|||
''Low-K Spin-On Dielectrics: Benzocyclobutane and Spin-on Glass'' |
|||
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}} |
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}} |
||
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene |
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}} |
||
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}} |
|||
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}} |
|||
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}} |
*{{fl|512B-Datasheet-revA.pdf|Spin-on-Glass, Honeywell 512B (Not Photosensitive)}} |
||
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}} |
*{{fl|512B-Application-Data-Bake-revA.pdf|Honeywell 512B Apps Data}} |
||
;<div id="Developers"><big>Developers</big></div> |
;<div id="Developers"><big>Developers</big></div> |
||
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}} |
*{{fl|AZ400K-Developer-Datasheet.pdf|AZ400K (AZ400K, AZ400K1:4)}} |
||
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}} |
*{{fl|AZ300MIF-Developer-Datasheet.pdf|AZ300MIF}} |
||
*DS2100 BCB Developer |
*DS2100 BCB Developer |
||
*SU-8 Developer |
*SU-8 Developer |
||
*101A Developer (for DUV Flood Exposed PMGI) |
*101A Developer (for DUV Flood Exposed PMGI) |
||
;<div id="PRRemovers"><big>Photoresist Removers</big></div> |
;<div id="PRRemovers"><big>Photoresist Removers</big></div> |
||
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP |
*[http://www.microchemicals.com/products/remover_stripper/nmp.html AZ NMP] |
||
** |
**''This replaces {{fl|1165-Resist-Remover.pdf|1165}}'' |
||
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}} |
*{{fl|AZ300T-Resist-Remover.pdf|AZ300T}} |
||
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}} |
*{{fl|RemoverPG-revA.pdf|Remover PG, SU-8 stripper}} |
||
*AZ EBR ("Edge Bead Remover", PGMEA) |
|||
|} |
|} |
||
[[Category: Processing]] |
|||
== Photolithography Recipes == |
|||
[[category: Lithography]] |
|||
[[category: Recipes]] |
|||
{{Recipe Table Explanation}} |
|||
{| border="1" style="border: 1px solid #D0E7FF; background-color:#ffffff; text-align:center;" class="wikitable" |
|||
|- bgcolor="#D0E7FF" |
|||
! height="45" colspan="9" | <div style="font-size: 150%;">Photolithography Recipes</div> |
|||
|- bgcolor="#D0E7FF" |
|||
| <!-- INTENTIONALLY LEFT BLANK --> <br> |
|||
! bgcolor="#D0E7FF" align="center" colspan="2" | '''[[Contact Alignment Recipes|Contact Aligners]]''' |
|||
! bgcolor="#D0E7FF" align="center" colspan="3" | '''[[Stepper Recipes|Steppers]]''' |
|||
|- |
|||
! width="150" bgcolor="#D0E7FF" align="center" | '''Positive Resists''' |
|||
{{LithRecipe Table}} |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | AZ4110 |
|||
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
|||
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
|||
| bgcolor="EEFFFF" | A |
|||
| bgcolor="EEFFFF" | A |
|||
| bgcolor="EEFFFF" | |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | AZ4210 |
|||
| {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
|||
| {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
|||
| A |
|||
| A |
|||
| <br> |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | AZ4330RS |
|||
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
|||
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
|||
| bgcolor="EEFFFF" | A |
|||
| bgcolor="EEFFFF" | A |
|||
| bgcolor="EEFFFF" | |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | OCG 825-35CS |
|||
| A |
|||
| A |
|||
| A |
|||
| A |
|||
| <br> |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | SPR 950-0.8 |
|||
| bgcolor="EEFFFF" | A |
|||
| bgcolor="EEFFFF" | A |
|||
| bgcolor="EEFFFF" | A |
|||
| bgcolor="EEFFFF" | A |
|||
| bgcolor="EEFFFF" | |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | SPR 955 CM-0.9 |
|||
| A |
|||
| {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
|||
| {{rl|Stepper Recipes|Positive Resist (GCA 6300)}} |
|||
| {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}} |
|||
| <br> |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | SPR 955 CM-1.8 |
|||
| bgcolor="EEFFFF" | A |
|||
| bgcolor="EEFFFF" | A |
|||
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (GCA 6300)}} |
|||
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}} |
|||
| bgcolor="EEFFFF" | |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | SPR 220-3.0 |
|||
| {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
|||
| {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
|||
| {{rl|Stepper Recipes|Positive Resist (GCA 6300)}} |
|||
| {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}} |
|||
| <br> |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | SPR 220-7.0 |
|||
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
|||
| bgcolor="EEFFFF" | {{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
|||
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (GCA 6300)}} |
|||
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (AutoStep 200)}} |
|||
| bgcolor="EEFFFF" | |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | THMR-IP3600 HP D |
|||
| <br> |
|||
| <br> |
|||
| A |
|||
| A |
|||
| <br> |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | UV6-0.8 |
|||
| bgcolor="EEFFFF" | |
|||
| bgcolor="EEFFFF" | |
|||
| bgcolor="EEFFFF" | |
|||
| bgcolor="EEFFFF" | |
|||
| bgcolor="EEFFFF" | {{rl|Stepper Recipes|Positive Resist (ASML DUV)}} |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | UV210-0.3 |
|||
| |
|||
| |
|||
| |
|||
| |
|||
| {{rl|Stepper Recipes|Positive Resist (ASML DUV)}} |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | PEK-162C1 |
|||
| bgcolor="EEFFFF" | |
|||
| bgcolor="EEFFFF" | |
|||
| bgcolor="EEFFFF" | |
|||
| bgcolor="EEFFFF" | |
|||
| bgcolor="EEFFFF" | A |
|||
|- |
|||
! bgcolor="#D0E7FF" align="center" | '''Negative Resists''' |
|||
{{LithRecipe Table}} |
|||
|- bgcolor="EEFFFF" |
|||
| bgcolor="#D0E7FF" align="center" | AZ5214-EIR |
|||
| {{rl|Contact_Alignment_Recipes|Negative Resist (MJB-3)}} |
|||
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}} |
|||
| {{rl|Stepper Recipes|Negative Resist (GCA 6300)}} |
|||
| {{rl|Stepper Recipes|Negative Resist (AutoStep 200)}} |
|||
| |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | AZnLOF 2020 |
|||
| {{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
|||
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}} |
|||
| {{rl|Stepper Recipes|Negative Resist (GCA 6300)}} |
|||
| {{rl|Stepper Recipes|Negative Resist (AutoStep 200)}} |
|||
| |
|||
|- bgcolor="EEFFFF" |
|||
| bgcolor="#D0E7FF" align="center" | AZnLOF 2035 |
|||
| A |
|||
| A |
|||
| A |
|||
| A |
|||
| |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | AZnLOF 2070 |
|||
| A |
|||
| A |
|||
| A |
|||
| A |
|||
| |
|||
|- bgcolor="EEFFFF" |
|||
| bgcolor="#D0E7FF" align="center" | AZnLOF 5510 |
|||
| A |
|||
| A |
|||
| {{rl|Stepper Recipes|Negative Resist (GCA 6300)}} |
|||
| {{rl|Stepper Recipes|Negative Resist (AutoStep 200)}} |
|||
| |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | UVN2300-0.5 |
|||
| |
|||
| |
|||
| |
|||
| |
|||
| {{rl|Stepper Recipes|Negative Resist (ASML DUV)}} |
|||
|- bgcolor="EEFFFF" |
|||
| bgcolor="#D0E7FF" align="center" | SU-8 2005,2010, 2015 |
|||
| A |
|||
| {{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}} |
|||
| A |
|||
| A |
|||
| |
|||
|- |
|||
| bgcolor="#D0E7FF" align="center" | SU-8 2075 |
|||
| A |
|||
| A |
|||
| A |
|||
| A |
|||
| |
|||
|-bgcolor="EEFFFF" |
|||
| bgcolor="#D0E7FF" align="center" | NR9-1000,3000,6000PY |
|||
| A |
|||
| A |
|||
| A |
|||
| {{rl|Stepper Recipes|Negative Resist (AutoStep 200)}} |
|||
| |
|||
|- |
|||
! bgcolor="#D0E7FF" align="center" | |
|||
{{LithRecipe Table}} |
|||
|} |
|||
== E-Beam Lithography Recipes == |
|||
*Under Development |
|||
== Nanoimprinting == |
|||
*{{fl|Thermal-Nanoimprint-Process-Tutorial-revA.pdf|Thermal Nanoimprint Process and Tutorial}} |
|||
*{{fl|Nanoinprint-Lithopgraphy-UV-Low-Pressure-Temperature-Ormostamp-PDMS-RevA.docx|UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process}} |
|||
== Holography Recipes == |
|||
*{{fl|31-Holography_Process_for_1D-lines_and_2D-dots-rev-3-13-2014.pdf|Standard Holography Process - on SiO2 on Si}} |
|||
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}} |
|||
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}} |
|||
*{{fl|30-Redicing_Nanowire_Diameter_by_Thermal_Oxidation_and_Vapored_HF_Etch.pdf|Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching}} |
|||
== Low-K Dielectric == |
|||
*{{fl|Lithography-BCB-photo-lowk-dielectric-spinon-4024-40-revA.docx|Photo BCB (4024-40)}} |
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*{{fl|BCB-cyclotene-3000-revA.pdf|Standard BCB (3022-46)}} |
|||
*{{fl|512B-Application-Data-Bake-revA.pdf|SOG (T512B)}} |
|||
[[Category:Processing]] |
Latest revision as of 22:09, 8 October 2024
Table of Contents |
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Photolithography Processes
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Photolithography Chemicals/Materials
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General Photolithography Techniques
HMDS Process for Improving Adhesion
- Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.
Edge-Bead Removal Techniques
- These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).
- For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the Maskless Aligner, EBR can help with autofocus issues.
Photoresist reflow (MicroChem)
- To create slanted sidewalls or curved surfaces.
Photolithography Recipes
- R: Recipe is available. Clicking this link will take you to the recipe.
- A: Material is available for use, but no recipes are provided.
Process Ranking Table
Processes in the table above are ranked by their "Process Maturity Level" as follows:
Process Level | Description of Process Level Ranking | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|
A | Process Allowed and materials available but never done | ||||||||||
R1 | Process has been run at least once | ||||||||||
R2 | Process has been run and/or procedure is documented or/and data available | ||||||||||
R3 | Process has been run, procedure is documented, and data is available | ||||||||||
R4 | Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available | ||||||||||
R5 | Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available | ||||||||||
R6 | Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available |
Click the tool title to go to recipes for that tool.
Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.
Lift-Off Recipes
- Lift-Off Description/Tutorial
- How it works, process limits and considerations for designing your process
- I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer
- Single Expose/Develop process for simplicity
- Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.
- Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)
- I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner
- Multiple processes for Metal thicknesses ~800nm to ~2.5µm
- Uses multiple DUV Flood exposure/develop cycles to create undercut.
- Can be transferred to other I-Line litho tools (Stepper, MLA etc.)
- DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer
- Single-expose/develop process
- Up to ~65nm metal thickness & ~350nm gap between metal
- Use thicker PMGI for thicker metals
E-Beam Lithography Recipes (JEOL JBX-6300FS)
- Under Development.
FIB Lithography Recipes (Raith Velion)
To Be Added
Automated Coat/Develop System Recipes (S-Cubed Flexi)
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.
Available Variations
- We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. Note that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
- DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
- DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
- "Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
- Developer recipes are now available for 300 MiF Developer. Note that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
- DO NOT EDIT developer recipes, they can damage the tool when programmed incorrectly!
- "Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
- ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.
Recipes Table (S-Cubed Flexi)
Coating Material | Route/Chain | Name: (User: "UCSB Users") | Spin Speed (krpm) | Bake Temp | Notes |
BEFORE LITHOGRAPHY (PR Coat and Bake) | |||||
---|---|---|---|---|---|
Hotplate Set | Route | To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed. HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C | |||
HP4-SET-220C | 220°C | Will over shoot +-2°C when done. | |||
HP4-SET-210C | 210°C | ||||
HP4-SET-200C | 200°C | ||||
HP4-SET-185C | 185°C | ||||
Bottom Anti-Reflection Coating (BARC), DSK101 only: | |||||
DS-K101 | Route | DSK101 Develop Rate depends on Bake temp - you can use this to control undercut. See: DSK Bake vs. Dev rate
DSK101 spun at 1.5K is equivalent to DUV-42P. See: Stepper Recipes#Anti-Reflective Coatings 185°C bake allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features) 220°C bake allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See here for relevant processing info from DUV42P. Note: All PR coat recipes have EBR backside clean steps included in the recipe. | |||
1.5krpm recipes | COAT-DSK101-304[1.5K]-185C | 1.5krpm | 185°C | Requires: HP4=185°C, | |
COAT-DSK101-304[1.5K]-200C | 1.5krpm | 200°C | Requires: HP4=200°C | ||
COAT-DSK101-304[1.5K]-210C | 1.5krpm | 210°C | Requires: HP4=210°C | ||
COAT-DSK101-304[1.5K]-220C | 1.5krpm | 220°C | Requires: HP4=220°C, | ||
5krpm recipes | COAT-DSK101-304[5K]-185C | 5.0krpm | 185°C | Requires: HP4=185°C, | |
COAT-DSK101-304[5K]-200C | 5.0krpm | 200°C | Requires: HP4=200°C | ||
COAT-DSK101-304[5K]-210C | 5.0krpm | 210°C | Requires: HP4=210°C | ||
COAT-DSK101-304[5K]-220C | 5.0krpm | 220°C | Requires: HP4=220°C, | ||
Imaging resist (UV6) only: | |||||
UV6-0.8 | Route | COAT-UV6[2K]-135C | 2.0krpm | 135°C | Requires: HP1=135°C |
varying spin speed | COAT-UV6[2.5K]-135C | 2.5krpm | 135°C | Requires: HP1=135°C | |
COAT-UV6[3K]-135C | 3.0krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[3.5K]-135C | 3.5krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[4K]-135C | 4.0krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[5K]-135C | 5.0krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[6K]-135C | 6.0krpm | 135°C | Requires: HP1=135°C | ||
UV6 Coat with Developable BARC underlayer: | |||||
DS-K101 @ 185°C
+ UV6 |
Chain | COAT-DSK101[1.5K]-185C-UV6[2K]-135C | DSK: 1.5krpm
UV6: 2.0krpm |
DSK: 185°C
UV6: 135°C |
Requires:
– HP4=185°C – HP1=135°C Plan for ~10-15 min per wafer. |
1.5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C | DSK: 1.5krpm
UV6: 2.5krpm |
same as above | same as above | |
COAT-DSK101[1.5K]-185C-UV6[3K]-135C | DSK: 1.5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C | DSK: 1.5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[4K]-135C | DSK: 1.5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[5K]-135C | DSK: 1.5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[6K]-135C | DSK: 1.5krpm
UV6: 6.0krpm |
same as above | same as above | ||
5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[5K]-185C-UV6[2K]-135C | DSK: 5krpm
UV6: 2.0krpm |
same as above | same as above | |
COAT-DSK101[5K]-185C-UV6[2.5K]-135C | DSK: 5krpm
UV6: 2.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[3K]-135C | DSK: 5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[3.5K]-135C | DSK: 5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[4K]-135C | DSK: 5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[5K]-135C | DSK: 5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[6K]-135C | DSK: 5krpm
UV6: 6.0krpm |
same as above | same as above | ||
UV6 Coat with Dry-Etchable BARC underlayer: | |||||
DS-K101 @ 220°C
+ UV6 |
Chain | COAT-DSK101[1.5K]-220C-UV6[2K]-135C | DSK: 1.5krpm
UV6: 2.0krpm |
DSK: 220°C
UV6: 135°C |
Requires:
– HP4=220°C – HP1=135°C Plan for ~10-15 min per wafer. |
1.5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C | DSK: 1.5krpm
UV6: 2.5krpm |
same as above | same as above | |
COAT-DSK101[1.5K]-220C-UV6[3K]-135C | DSK: 1.5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C | DSK: 1.5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[4K]-135C | DSK: 1.5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[5K]-135C | DSK: 1.5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[6K]-135C | DSK: 1.5krpm
UV6: 6.0krpm |
same as above | same as above | ||
5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[5K]-220C-UV6[2K]-135C | DSK: 5krpm
UV6: 2.0krpm |
same as above | same as above | |
COAT-DSK101[5K]-220C-UV6[2.5K]-135C | DSK: 5krpm
UV6: 2.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[3K]-135C | DSK: 5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[3.5K]-135C | DSK: 5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[4K]-135C | DSK: 5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[5K]-135C | DSK: 5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[6K]-135C | DSK: 5krpm
UV6: 6.0krpm |
same as above | same as above | ||
AFTER LITHOGRAPHY (PEB and Developing) | |||||
PEB Wafer Bake | Route | To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec | |||
BAKE-135C-90S | 135°C | Requires: HP1=135°C | |||
PEB and Developing | Route | To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec
WARNING: DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!) | |||
Varying developer time | BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S | Developer chuck: 300rpm | 135°C | Requires: HP1=135°C | |
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-25S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-30S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-35S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-40S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-45S | same as above | same as above | same as above | ||
Developing | Route | To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)
WARNING: DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!) | |||
Varying developer time | DEV[MIF300]-SPIN[300RPM]-10S | Developer chuck: 300rpm | 135°C | Requires: HP1=135°C | |
DEV[MIF300]-SPIN[300RPM]-15S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-20S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-25S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-30S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-35S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-40S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-45S | same as above | same as above | same as above | ||
Holography Recipes
The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.
- Standard Holography Process - on SiO2 on Si
- Holography Process Variations - Set-up Angle - Etching into SiO2 and Si
- Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width
- Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching
Low-K Spin-On Dielectric Recipes
Chemicals Stocked + Datasheets
The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.