Lithography Recipes: Difference between revisions
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*''To create slanted sidewalls or curved surfaces.'' |
*''To create slanted sidewalls or curved surfaces.'' |
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[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']] |
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* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.'' |
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* ''Explains how to locate the'' ''"Process Window" for your lithography.'' |
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==Photolithography Recipes== |
==Photolithography Recipes== |
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|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}} |
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}} |
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|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}} |
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| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0] |
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/3f/SPR220-Positive-Resist-Datasheet.pdf SPR 220-3.0] |
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|{{rl|Stepper Recipes|DUV-42P-6|R3}} |
|{{rl|Stepper Recipes|DUV-42P-6|R3}} |
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===Available Variations=== |
===Available Variations=== |
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*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. |
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed. |
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*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes. |
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes. |
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*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required). |
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required). |
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*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes". |
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes". |
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*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so <u>develop times are shorter by ~50%</u> compared to beaker developing. |
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**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly! |
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*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made. |
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*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done. |
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===Recipes Table (S-Cubed Flexi)=== |
===Recipes Table (S-Cubed Flexi)=== |
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Line 400: | Line 407: | ||
|Route |
|Route |
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| colspan="4" |To pre-set the DSK Hotplate temp (HP4). |
| colspan="4" |To pre-set the DSK Hotplate temp (HP4). |
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Note: Only HP4 can be changed. |
Note: Only HP4 can be changed. |
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HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C |
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|HP4-SET-220C |
|HP4-SET-'''220C''' |
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|220°C |
|220°C |
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|HP4-SET-210C |
|HP4-SET-'''210C''' |
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|210°C |
|210°C |
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Line 418: | Line 427: | ||
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|HP4-SET-200C |
|HP4-SET-'''200C''' |
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|200°C |
|200°C |
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Line 425: | Line 434: | ||
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|HP4-SET-185C |
|HP4-SET-'''185C''' |
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|185°C |
|185°C |
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|- |
|- |
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| colspan="6" |'''<u>''Bottom Anti-Reflection Coating (BARC), DSK101 only:''</u>''' |
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| colspan="6" | |
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|- |
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|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]''''' |
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]''''' |
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Line 437: | Line 446: | ||
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]] |
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]] |
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185°C bake allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features) |
'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features) |
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220°C bake allows DSK to be used as dry-etchable BARC, requiring O2 etch to remove. |
'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]]. |
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'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.''' |
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.''' |
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|- |
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|1.5krpm recipes |
|''<u>1.5krpm</u> recipes'' |
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|COAT-DSK101-304[1.5K]-185C |
|COAT-DSK101-304[1.5K]-'''185C''' |
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|1.5krpm |
|1.5krpm |
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|185°C |
|185°C |
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Line 452: | Line 461: | ||
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|COAT-DSK101-304[1.5K]-200C |
|COAT-DSK101-304[1.5K]-'''200C''' |
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|1.5krpm |
|1.5krpm |
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|200°C |
|200°C |
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Line 459: | Line 468: | ||
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|COAT-DSK101-304[1.5K]-210C |
|COAT-DSK101-304[1.5K]-'''210C''' |
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|1.5krpm |
|1.5krpm |
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|210°C |
|210°C |
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Line 466: | Line 475: | ||
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|COAT-DSK101-304[1.5K]-220C |
|COAT-DSK101-304[1.5K]-'''220C''' |
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|1.5krpm |
|1.5krpm |
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|220°C |
|220°C |
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Line 473: | Line 482: | ||
| colspan="6" | |
| colspan="6" | |
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|- |
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|5krpm recipes |
|''<u>5krpm</u> recipes'' |
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|COAT-DSK101-304[5K]-185C |
|COAT-DSK101-304[5K]-'''185C''' |
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|5.0krpm |
|5.0krpm |
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|185°C |
|185°C |
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Line 482: | Line 491: | ||
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|COAT-DSK101-304[5K]-200C |
|COAT-DSK101-304[5K]-'''200C''' |
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|5.0krpm |
|5.0krpm |
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|200°C |
|200°C |
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Line 489: | Line 498: | ||
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|COAT-DSK101-304[5K]-210C |
|COAT-DSK101-304[5K]-'''210C''' |
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|5.0krpm |
|5.0krpm |
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|210°C |
|210°C |
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Line 496: | Line 505: | ||
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|COAT-DSK101-304[5K]-220C |
|COAT-DSK101-304[5K]-'''220C''' |
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|5.0krpm |
|5.0krpm |
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|220°C |
|220°C |
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|Requires: HP4=220°C, |
|Requires: HP4=220°C, |
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|- |
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| colspan="6" | |
| colspan="6" |'''<u>''Imaging resist (UV6) only:''</u>''' |
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|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]''''' |
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]''''' |
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|Route |
|Route |
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|COAT-UV6[2K]-135C |
|COAT-UV6['''2K''']-135C |
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|2.0krpm |
|2.0krpm |
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|135°C |
|135°C |
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|Requires: HP1=135°C |
|Requires: HP1=135°C |
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|- |
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|varying spin speed |
|''varying spin speed'' |
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|COAT-UV6[2.5K]-135C |
|COAT-UV6['''2.5K''']-135C |
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|2.5krpm |
|2.5krpm |
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|135°C |
|135°C |
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Line 519: | Line 528: | ||
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|COAT-UV6[3K]-135C |
|COAT-UV6['''3K''']-135C |
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|3.0krpm |
|3.0krpm |
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|135°C |
|135°C |
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Line 526: | Line 535: | ||
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|COAT-UV6[3.5K]-135C |
|COAT-UV6['''3.5K''']-135C |
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|3.5krpm |
|3.5krpm |
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|135°C |
|135°C |
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Line 533: | Line 542: | ||
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|COAT-UV6[4K]-135C |
|COAT-UV6['''4K''']-135C |
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|4.0krpm |
|4.0krpm |
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|135°C |
|135°C |
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Line 540: | Line 549: | ||
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|COAT-UV6[5K]-135C |
|COAT-UV6['''5K''']-135C |
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|5.0krpm |
|5.0krpm |
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|135°C |
|135°C |
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Line 547: | Line 556: | ||
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|COAT-UV6[6K]-135C |
|COAT-UV6['''6K''']-135C |
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|6.0krpm |
|6.0krpm |
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|135°C |
|135°C |
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Line 557: | Line 566: | ||
'''''+ UV6''''' |
'''''+ UV6''''' |
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|Chain |
|Chain |
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|COAT-DSK101[1.5K]-185C-UV6[2K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 2.0krpm |
UV6: 2.0krpm |
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Line 569: | Line 578: | ||
Plan for ~10-15 min per wafer. |
Plan for ~10-15 min per wafer. |
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|- |
|- |
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|1.5krpm DSK recipes with |
|''<u>1.5krpm DSK</u> recipes with'' |
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UV6- various spin speeds |
''UV6- various spin speeds'' |
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|COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 2.5krpm |
UV6: 2.5krpm |
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Line 580: | Line 589: | ||
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|COAT-DSK101[1.5K]-185C-UV6[3K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 3.0krpm |
UV6: 3.0krpm |
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Line 588: | Line 597: | ||
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|COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 3.5krpm |
UV6: 3.5krpm |
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Line 596: | Line 605: | ||
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|COAT-DSK101[1.5K]-185C-UV6[4K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 4.0krpm |
UV6: 4.0krpm |
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Line 604: | Line 613: | ||
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|COAT-DSK101[1.5K]-185C-UV6[5K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 5.0krpm |
UV6: 5.0krpm |
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Line 612: | Line 621: | ||
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|COAT-DSK101[1.5K]-185C-UV6[6K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 6.0krpm |
UV6: 6.0krpm |
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Line 620: | Line 629: | ||
| colspan="6" | |
| colspan="6" | |
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|- |
|- |
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|5krpm DSK recipes with |
|''<u>5krpm DSK</u> recipes with'' |
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UV6- various spin speeds |
''UV6- various spin speeds'' |
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|COAT-DSK101[5K]-185C-UV6[2K]-135C |
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C |
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|DSK: 5krpm |
|DSK: 5krpm |
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UV6: 2.0krpm |
UV6: 2.0krpm |
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Line 631: | Line 640: | ||
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|COAT-DSK101[5K]-185C-UV6[2.5K]-135C |
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C |
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|DSK: 5krpm |
|DSK: 5krpm |
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UV6: 2.5krpm |
UV6: 2.5krpm |
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Line 639: | Line 648: | ||
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|COAT-DSK101[5K]-185C-UV6[3K]-135C |
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C |
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|DSK: 5krpm |
|DSK: 5krpm |
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UV6: 3.0krpm |
UV6: 3.0krpm |
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Line 647: | Line 656: | ||
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|COAT-DSK101[5K]-185C-UV6[3.5K]-135C |
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C |
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|DSK: 5krpm |
|DSK: 5krpm |
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UV6: 3.5krpm |
UV6: 3.5krpm |
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Line 655: | Line 664: | ||
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|COAT-DSK101[5K]-185C-UV6[4K]-135C |
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C |
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|DSK: 5krpm |
|DSK: 5krpm |
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UV6: 4.0krpm |
UV6: 4.0krpm |
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Line 663: | Line 672: | ||
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|COAT-DSK101[5K]-185C-UV6[5K]-135C |
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C |
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|DSK: 5krpm |
|DSK: 5krpm |
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UV6: 5.0krpm |
UV6: 5.0krpm |
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Line 671: | Line 680: | ||
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|COAT-DSK101[5K]-185C-UV6[6K]-135C |
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C |
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|DSK: 5krpm |
|DSK: 5krpm |
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UV6: 6.0krpm |
UV6: 6.0krpm |
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Line 682: | Line 691: | ||
'''''+ UV6''''' |
'''''+ UV6''''' |
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|Chain |
|Chain |
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|COAT-DSK101[1.5K]-220C-UV6[2K]-135C |
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 2.0krpm |
UV6: 2.0krpm |
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Line 694: | Line 703: | ||
Plan for ~10-15 min per wafer. |
Plan for ~10-15 min per wafer. |
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|- |
|- |
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|1.5krpm DSK recipes with |
|''<u>1.5krpm DSK</u> recipes with'' |
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UV6- various spin speeds |
''UV6- various spin speeds'' |
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| |
| |
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|COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C |
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 2.5krpm |
UV6: 2.5krpm |
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Line 705: | Line 714: | ||
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|COAT-DSK101[1.5K]-220C-UV6[3K]-135C |
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 3.0krpm |
UV6: 3.0krpm |
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Line 713: | Line 722: | ||
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|COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C |
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 3.5krpm |
UV6: 3.5krpm |
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Line 721: | Line 730: | ||
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|COAT-DSK101[1.5K]-220C-UV6[4K]-135C |
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 4.0krpm |
UV6: 4.0krpm |
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Line 729: | Line 738: | ||
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| |
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|COAT-DSK101[1.5K]-220C-UV6[5K]-135C |
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C |
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|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 5.0krpm |
UV6: 5.0krpm |
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Line 737: | Line 746: | ||
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| |
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|COAT-DSK101[1.5K]-220C-UV6[6K]-135C |
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C |
||
|DSK: 1.5krpm |
|DSK: 1.5krpm |
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UV6: 6.0krpm |
UV6: 6.0krpm |
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Line 745: | Line 754: | ||
| colspan="6" | |
| colspan="6" | |
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|- |
|- |
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|5krpm DSK recipes with |
|''<u>5krpm DSK</u> recipes with'' |
||
UV6- various spin speeds |
''UV6- various spin speeds'' |
||
| |
| |
||
|COAT-DSK101[5K]-220C-UV6[2K]-135C |
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C |
||
|DSK: 5krpm |
|DSK: 5krpm |
||
UV6: 2.0krpm |
UV6: 2.0krpm |
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Line 756: | Line 765: | ||
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| |
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|COAT-DSK101[5K]-220C-UV6[2.5K]-135C |
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C |
||
|DSK: 5krpm |
|DSK: 5krpm |
||
UV6: 2.5krpm |
UV6: 2.5krpm |
||
Line 764: | Line 773: | ||
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|COAT-DSK101[5K]-220C-UV6[3K]-135C |
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C |
||
|DSK: 5krpm |
|DSK: 5krpm |
||
UV6: 3.0krpm |
UV6: 3.0krpm |
||
Line 772: | Line 781: | ||
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| |
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|COAT-DSK101[5K]-220C-UV6[3.5K]-135C |
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C |
||
|DSK: 5krpm |
|DSK: 5krpm |
||
UV6: 3.5krpm |
UV6: 3.5krpm |
||
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|COAT-DSK101[5K]-220C-UV6[4K]-135C |
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C |
||
|DSK: 5krpm |
|DSK: 5krpm |
||
UV6: 4.0krpm |
UV6: 4.0krpm |
||
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| |
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|COAT-DSK101[5K]-220C-UV6[5K]-135C |
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C |
||
|DSK: 5krpm |
|DSK: 5krpm |
||
UV6: 5.0krpm |
UV6: 5.0krpm |
||
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|COAT-DSK101[5K]-220C-UV6[6K]-135C |
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C |
||
|DSK: 5krpm |
|DSK: 5krpm |
||
UV6: 6.0krpm |
UV6: 6.0krpm |
||
Line 823: | Line 832: | ||
|'''''PEB and Developing''''' |
|'''''PEB and Developing''''' |
||
|Route |
|Route |
||
| colspan="4" |To bake wafer |
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec |
||
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE |
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!) |
||
|- |
|- |
||
|Varying developer time |
|''Varying developer time'' |
||
| |
| |
||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S |
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S''' |
||
|Developer chuck: 300rpm |
|Developer chuck: 300rpm |
||
|135°C |
|135°C |
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| |
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|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S |
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S''' |
||
|same as above |
|same as above |
||
|same as above |
|same as above |
||
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| |
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|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S |
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S''' |
||
|same as above |
|same as above |
||
|same as above |
|same as above |
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|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-25S |
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S''' |
||
|same as above |
|same as above |
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|same as above |
|same as above |
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| |
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|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-30S |
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S''' |
||
|same as above |
|same as above |
||
|same as above |
|same as above |
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| |
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| |
| |
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|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-35S |
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S''' |
||
|same as above |
|same as above |
||
|same as above |
|same as above |
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|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-40S |
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S''' |
||
|same as above |
|same as above |
||
|same as above |
|same as above |
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|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-45S |
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S''' |
||
|same as above |
|same as above |
||
|same as above |
|same as above |
||
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|'''Developing''' |
|'''Developing''' |
||
|Route |
|Route |
||
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec |
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB) |
||
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE |
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!) |
||
|- |
|- |
||
|Varying developer time |
|''Varying developer time'' |
||
| |
| |
||
|DEV[MIF300]-SPIN[300RPM]-10S |
|DEV[MIF300]-SPIN[300RPM]-'''10S''' |
||
|Developer chuck: 300rpm |
|Developer chuck: 300rpm |
||
|135°C |
|135°C |
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|DEV[MIF300]-SPIN[300RPM]-15S |
|DEV[MIF300]-SPIN[300RPM]-'''15S''' |
||
|same as above |
|same as above |
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|same as above |
|same as above |
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|DEV[MIF300]-SPIN[300RPM]-20S |
|DEV[MIF300]-SPIN[300RPM]-'''20S''' |
||
|same as above |
|same as above |
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|same as above |
|same as above |
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|DEV[MIF300]-SPIN[300RPM]-25S |
|DEV[MIF300]-SPIN[300RPM]-'''25S''' |
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|same as above |
|same as above |
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|same as above |
|same as above |
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|DEV[MIF300]-SPIN[300RPM]-30S |
|DEV[MIF300]-SPIN[300RPM]-'''30S''' |
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|same as above |
|same as above |
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|same as above |
|same as above |
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|DEV[MIF300]-SPIN[300RPM]-35S |
|DEV[MIF300]-SPIN[300RPM]-'''35S''' |
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|same as above |
|same as above |
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|same as above |
|same as above |
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|DEV[MIF300]-SPIN[300RPM]-40S |
|DEV[MIF300]-SPIN[300RPM]-'''40S''' |
||
|same as above |
|same as above |
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|same as above |
|same as above |
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|DEV[MIF300]-SPIN[300RPM]-45S |
|DEV[MIF300]-SPIN[300RPM]-'''45S''' |
||
|same as above |
|same as above |
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|same as above |
|same as above |
Latest revision as of 19:21, 12 November 2024
Table of Contents |
---|
Photolithography Processes
|
Photolithography Chemicals/Materials
|
General Photolithography Techniques
HMDS Process for Improving Adhesion
- Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.
Edge-Bead Removal Techniques
- These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).
- For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the Maskless Aligner, EBR can help with autofocus issues.
Photoresist reflow (MicroChem)
- To create slanted sidewalls or curved surfaces.
Lithography Calibration - Analyzing a Focus-Exposure Matrix
- On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.
- Explains how to locate the "Process Window" for your lithography.
Photolithography Recipes
- R: Recipe is available. Clicking this link will take you to the recipe.
- A: Material is available for use, but no recipes are provided.
Process Ranking Table
Processes in the table above are ranked by their "Process Maturity Level" as follows:
Process Level | Description of Process Level Ranking | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|
A | Process Allowed and materials available but never done | ||||||||||
R1 | Process has been run at least once | ||||||||||
R2 | Process has been run and/or procedure is documented or/and data available | ||||||||||
R3 | Process has been run, procedure is documented, and data is available | ||||||||||
R4 | Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available | ||||||||||
R5 | Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available | ||||||||||
R6 | Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available |
Click the tool title to go to recipes for that tool.
Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.
Lift-Off Recipes
- Lift-Off Description/Tutorial
- How it works, process limits and considerations for designing your process
- I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer
- Single Expose/Develop process for simplicity
- Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.
- Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)
- I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner
- Multiple processes for Metal thicknesses ~800nm to ~2.5µm
- Uses multiple DUV Flood exposure/develop cycles to create undercut.
- Can be transferred to other I-Line litho tools (Stepper, MLA etc.)
- DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer
- Single-expose/develop process
- Up to ~65nm metal thickness & ~350nm gap between metal
- Use thicker PMGI for thicker metals
E-Beam Lithography Recipes (JEOL JBX-6300FS)
- Under Development.
FIB Lithography Recipes (Raith Velion)
To Be Added
Automated Coat/Develop System Recipes (S-Cubed Flexi)
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.
Available Variations
- We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. Note that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
- DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
- DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
- "Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
- Developer recipes are now available for 300 MiF Developer. Note that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
- DO NOT EDIT developer recipes, they can damage the tool when programmed incorrectly!
- "Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
- ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.
Recipes Table (S-Cubed Flexi)
Coating Material | Route/Chain | Name: (User: "UCSB Users") | Spin Speed (krpm) | Bake Temp | Notes |
BEFORE LITHOGRAPHY (PR Coat and Bake) | |||||
---|---|---|---|---|---|
Hotplate Set | Route | To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed. HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C | |||
HP4-SET-220C | 220°C | Will over shoot +-2°C when done. | |||
HP4-SET-210C | 210°C | ||||
HP4-SET-200C | 200°C | ||||
HP4-SET-185C | 185°C | ||||
Bottom Anti-Reflection Coating (BARC), DSK101 only: | |||||
DS-K101 | Route | DSK101 Develop Rate depends on Bake temp - you can use this to control undercut. See: DSK Bake vs. Dev rate
DSK101 spun at 1.5K is equivalent to DUV-42P. See: Stepper Recipes#Anti-Reflective Coatings 185°C bake allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features) 220°C bake allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See here for relevant processing info from DUV42P. Note: All PR coat recipes have EBR backside clean steps included in the recipe. | |||
1.5krpm recipes | COAT-DSK101-304[1.5K]-185C | 1.5krpm | 185°C | Requires: HP4=185°C, | |
COAT-DSK101-304[1.5K]-200C | 1.5krpm | 200°C | Requires: HP4=200°C | ||
COAT-DSK101-304[1.5K]-210C | 1.5krpm | 210°C | Requires: HP4=210°C | ||
COAT-DSK101-304[1.5K]-220C | 1.5krpm | 220°C | Requires: HP4=220°C, | ||
5krpm recipes | COAT-DSK101-304[5K]-185C | 5.0krpm | 185°C | Requires: HP4=185°C, | |
COAT-DSK101-304[5K]-200C | 5.0krpm | 200°C | Requires: HP4=200°C | ||
COAT-DSK101-304[5K]-210C | 5.0krpm | 210°C | Requires: HP4=210°C | ||
COAT-DSK101-304[5K]-220C | 5.0krpm | 220°C | Requires: HP4=220°C, | ||
Imaging resist (UV6) only: | |||||
UV6-0.8 | Route | COAT-UV6[2K]-135C | 2.0krpm | 135°C | Requires: HP1=135°C |
varying spin speed | COAT-UV6[2.5K]-135C | 2.5krpm | 135°C | Requires: HP1=135°C | |
COAT-UV6[3K]-135C | 3.0krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[3.5K]-135C | 3.5krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[4K]-135C | 4.0krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[5K]-135C | 5.0krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[6K]-135C | 6.0krpm | 135°C | Requires: HP1=135°C | ||
UV6 Coat with Developable BARC underlayer: | |||||
DS-K101 @ 185°C
+ UV6 |
Chain | COAT-DSK101[1.5K]-185C-UV6[2K]-135C | DSK: 1.5krpm
UV6: 2.0krpm |
DSK: 185°C
UV6: 135°C |
Requires:
– HP4=185°C – HP1=135°C Plan for ~10-15 min per wafer. |
1.5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C | DSK: 1.5krpm
UV6: 2.5krpm |
same as above | same as above | |
COAT-DSK101[1.5K]-185C-UV6[3K]-135C | DSK: 1.5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C | DSK: 1.5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[4K]-135C | DSK: 1.5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[5K]-135C | DSK: 1.5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[6K]-135C | DSK: 1.5krpm
UV6: 6.0krpm |
same as above | same as above | ||
5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[5K]-185C-UV6[2K]-135C | DSK: 5krpm
UV6: 2.0krpm |
same as above | same as above | |
COAT-DSK101[5K]-185C-UV6[2.5K]-135C | DSK: 5krpm
UV6: 2.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[3K]-135C | DSK: 5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[3.5K]-135C | DSK: 5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[4K]-135C | DSK: 5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[5K]-135C | DSK: 5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[6K]-135C | DSK: 5krpm
UV6: 6.0krpm |
same as above | same as above | ||
UV6 Coat with Dry-Etchable BARC underlayer: | |||||
DS-K101 @ 220°C
+ UV6 |
Chain | COAT-DSK101[1.5K]-220C-UV6[2K]-135C | DSK: 1.5krpm
UV6: 2.0krpm |
DSK: 220°C
UV6: 135°C |
Requires:
– HP4=220°C – HP1=135°C Plan for ~10-15 min per wafer. |
1.5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C | DSK: 1.5krpm
UV6: 2.5krpm |
same as above | same as above | |
COAT-DSK101[1.5K]-220C-UV6[3K]-135C | DSK: 1.5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C | DSK: 1.5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[4K]-135C | DSK: 1.5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[5K]-135C | DSK: 1.5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[6K]-135C | DSK: 1.5krpm
UV6: 6.0krpm |
same as above | same as above | ||
5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[5K]-220C-UV6[2K]-135C | DSK: 5krpm
UV6: 2.0krpm |
same as above | same as above | |
COAT-DSK101[5K]-220C-UV6[2.5K]-135C | DSK: 5krpm
UV6: 2.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[3K]-135C | DSK: 5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[3.5K]-135C | DSK: 5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[4K]-135C | DSK: 5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[5K]-135C | DSK: 5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[6K]-135C | DSK: 5krpm
UV6: 6.0krpm |
same as above | same as above | ||
AFTER LITHOGRAPHY (PEB and Developing) | |||||
PEB Wafer Bake | Route | To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec | |||
BAKE-135C-90S | 135°C | Requires: HP1=135°C | |||
PEB and Developing | Route | To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec
WARNING: DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!) | |||
Varying developer time | BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S | Developer chuck: 300rpm | 135°C | Requires: HP1=135°C | |
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-25S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-30S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-35S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-40S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-45S | same as above | same as above | same as above | ||
Developing | Route | To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)
WARNING: DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!) | |||
Varying developer time | DEV[MIF300]-SPIN[300RPM]-10S | Developer chuck: 300rpm | 135°C | Requires: HP1=135°C | |
DEV[MIF300]-SPIN[300RPM]-15S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-20S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-25S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-30S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-35S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-40S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-45S | same as above | same as above | same as above | ||
Holography Recipes
The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.
- Standard Holography Process - on SiO2 on Si
- Holography Process Variations - Set-up Angle - Etching into SiO2 and Si
- Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width
- Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching
Low-K Spin-On Dielectric Recipes
Chemicals Stocked + Datasheets
The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.