Difference between revisions of "Lithography Recipes"
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| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]'' |
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]'' |
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DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]] |
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]] |
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+ | 185°C bake allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features) |
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+ | 220°C bake allows DSK to be used as dry-etchable BARC, requiring O2 etch to remove. |
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'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.''' |
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.''' |
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*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}} |
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Latest revision as of 11:05, 3 September 2024
Table of Contents |
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Photolithography Processes
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Photolithography Chemicals/Materials
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General Photolithography Techniques
HMDS Process for Improving Adhesion
- Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.
Edge-Bead Removal Techniques
- These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).
- For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the Maskless Aligner, EBR can help with autofocus issues.
Photoresist reflow (MicroChem)
- To create slanted sidewalls or curved surfaces.
Photolithography Recipes
- R: Recipe is available. Clicking this link will take you to the recipe.
- A: Material is available for use, but no recipes are provided.
Process Ranking Table
Processes in the table above are ranked by their "Process Maturity Level" as follows:
Process Level | Description of Process Level Ranking | ||||||||||
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A | Process Allowed and materials available but never done | ||||||||||
R1 | Process has been run at least once | ||||||||||
R2 | Process has been run and/or procedure is documented or/and data available | ||||||||||
R3 | Process has been run, procedure is documented, and data is available | ||||||||||
R4 | Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available | ||||||||||
R5 | Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available | ||||||||||
R6 | Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available |
Click the tool title to go to recipes for that tool.
Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.
Lift-Off Recipes
- Lift-Off Description/Tutorial
- How it works, process limits and considerations for designing your process
- I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer
- Single Expose/Develop process for simplicity
- Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.
- Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)
- I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner
- Multiple processes for Metal thicknesses ~800nm to ~2.5µm
- Uses multiple DUV Flood exposure/develop cycles to create undercut.
- Can be transferred to other I-Line litho tools (Stepper, MLA etc.)
- DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer
- Single-expose/develop process
- Up to ~65nm metal thickness & ~350nm gap between metal
- Use thicker PMGI for thicker metals
E-Beam Lithography Recipes (JEOL JBX-6300FS)
- Under Development.
FIB Lithography Recipes (Raith Velion)
To Be Added
Automated Coat/Develop System Recipes (S-Cubed Flexi)
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.
Available Variations
- We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves.
- DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
- DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
- "Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
Recipes Table (S-Cubed Flexi)
Coating Material | Route/Chain | Name: (User: "UCSB Users") | Spin Speed (krpm) | Bake Temp | Notes |
BEFORE LITHOGRAPHY (PR Coat and Bake) | |||||
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Hotplate Set | Route | To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed. HP1-HP3 remains fixed. HP1=135°C, HP2=170°C & HP3=170°C | |||
HP4-SET-220C | 220°C | Will over shoot +-2°C when done. | |||
HP4-SET-210C | 210°C | ||||
HP4-SET-200C | 200°C | ||||
HP4-SET-185C | 185°C | ||||
DS-K101 | Route | DSK101 Develop Rate depends on Bake temp - you can use this to control undercut. See: DSK Bake vs. Dev rate
DSK101 spun at 1.5K is equivalent to DUV-42P. See: Stepper Recipes#Anti-Reflective Coatings 185°C bake allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features) 220°C bake allows DSK to be used as dry-etchable BARC, requiring O2 etch to remove. Note: All PR coat recipes have EBR backside clean steps included in the recipe. | |||
1.5krpm recipes | COAT-DSK101-304[1.5K]-185C | 1.5krpm | 185°C | Requires: HP4=185°C, | |
COAT-DSK101-304[1.5K]-200C | 1.5krpm | 200°C | Requires: HP4=200°C | ||
COAT-DSK101-304[1.5K]-210C | 1.5krpm | 210°C | Requires: HP4=210°C | ||
COAT-DSK101-304[1.5K]-220C | 1.5krpm | 220°C | Requires: HP4=220°C, | ||
5krpm recipes | COAT-DSK101-304[5K]-185C | 5.0krpm | 185°C | Requires: HP4=185°C, | |
COAT-DSK101-304[5K]-200C | 5.0krpm | 200°C | Requires: HP4=200°C | ||
COAT-DSK101-304[5K]-210C | 5.0krpm | 210°C | Requires: HP4=210°C | ||
COAT-DSK101-304[5K]-220C | 5.0krpm | 220°C | Requires: HP4=220°C, | ||
UV6-0.8 | Route | COAT-UV6[2K]-135C | 2.0krpm | 135°C | Requires: HP1=135°C |
varying spin speed | COAT-UV6[2.5K]-135C | 2.5krpm | 135°C | Requires: HP1=135°C | |
COAT-UV6[3K]-135C | 3.0krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[3.5K]-135C | 3.5krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[4K]-135C | 4.0krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[5K]-135C | 5.0krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[6K]-135C | 6.0krpm | 135°C | Requires: HP1=135°C | ||
UV6 Coat with Developable BARC underlayer: | |||||
DS-K101 @ 185°C
+ UV6 |
Chain | COAT-DSK101[1.5K]-185C-UV6[2K]-135C | DSK: 1.5krpm
UV6: 2.0krpm |
DSK: 185°C
UV6: 135°C |
Requires:
– HP4=185°C – HP1=135°C Plan for ~10-15 min per wafer. |
1.5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C | DSK: 1.5krpm
UV6: 2.5krpm |
same as above | same as above | |
COAT-DSK101[1.5K]-185C-UV6[3K]-135C | DSK: 1.5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C | DSK: 1.5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[4K]-135C | DSK: 1.5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[5K]-135C | DSK: 1.5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[6K]-135C | DSK: 1.5krpm
UV6: 6.0krpm |
same as above | same as above | ||
5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[5K]-185C-UV6[2K]-135C | DSK: 5krpm
UV6: 2.0krpm |
same as above | same as above | |
COAT-DSK101[5K]-185C-UV6[2.5K]-135C | DSK: 5krpm
UV6: 2.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[3K]-135C | DSK: 5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[3.5K]-135C | DSK: 5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[4K]-135C | DSK: 5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[5K]-135C | DSK: 5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[6K]-135C | DSK: 5krpm
UV6: 6.0krpm |
same as above | same as above | ||
UV6 Coat with Dry-Etchable BARC underlayer: | |||||
DS-K101 @ 220°C
+ UV6 |
Chain | COAT-DSK101[1.5K]-220C-UV6[2K]-135C | DSK: 1.5krpm
UV6: 2.0krpm |
DSK: 220°C
UV6: 135°C |
Requires:
– HP4=220°C – HP1=135°C Plan for ~10-15 min per wafer. |
1.5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C | DSK: 1.5krpm
UV6: 2.5krpm |
same as above | same as above | |
COAT-DSK101[1.5K]-220C-UV6[3K]-135C | DSK: 1.5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C | DSK: 1.5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[4K]-135C | DSK: 1.5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[5K]-135C | DSK: 1.5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[6K]-135C | DSK: 1.5krpm
UV6: 6.0krpm |
same as above | same as above | ||
5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[5K]-220C-UV6[2K]-135C | DSK: 5krpm
UV6: 2.0krpm |
same as above | same as above | |
COAT-DSK101[5K]-220C-UV6[2.5K]-135C | DSK: 5krpm
UV6: 2.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[3K]-135C | DSK: 5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[3.5K]-135C | DSK: 5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[4K]-135C | DSK: 5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[5K]-135C | DSK: 5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[6K]-135C | DSK: 5krpm
UV6: 6.0krpm |
same as above | same as above | ||
AFTER LITHOGRAPHY (PEB and Developing) | |||||
PEB Wafer Bake | Route | To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec | |||
BAKE-135C-90S | 135°C | Requires: HP1=135°C | |||
PEB and Developing | Route | To bake wafer with UV6 after exposure (PEB) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE | |||
Varying developer time | BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S | Developer chuck: 300rpm | 135°C | Requires: HP1=135°C | |
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S | same as above | same as above | same as above | ||
Developing | Route | To only develop wafer using AZ300MIF and water rinse 60sec
WARNING: DONOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE | |||
Varying developer time | DEV[MIF300]-SPIN[300RPM]-10S | Developer chuck: 300rpm | 135°C | Requires: HP1=135°C | |
DEV[MIF300]-SPIN[300RPM]-15S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-20S | same as above | same as above | same as above | ||
Holography Recipes
The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.
- Standard Holography Process - on SiO2 on Si
- Holography Process Variations - Set-up Angle - Etching into SiO2 and Si
- Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width
- Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching
Low-K Spin-On Dielectric Recipes
Chemicals Stocked + Datasheets
The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.