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__NOTOC__
==General Information==

This page contains information and links to recipes/datasheets spin-coated materials used in the facility.

{| class="wikitable"
{| class="wikitable"
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!Table of Contents
!Table of Contents
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|-
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|'''<u><big>Photolithography Processes</big></u>'''
==='''<big>Photolithography Processes</big>'''===
*'''UV Optical Lithography'''
**[[#Photolithography_Recipes |Photo Lithography Recipe section]]
***''Has links to starting recipes (spin, bake, exposure, develop etc.) for Contact Aligners, Steppers and Maskless Aligner.''
***''Substrate, surface materials, pattern size can often affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
**[[#PositivePR |Stocked Lithography Chemical + Datasheets]]
***''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
*'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
**''Verified Recipes for lift-off using various photolith. tools''
**''General educational description of this technique and it's limitations/considerations.''
*'''E-beam Lithography'''
**[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
***''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
**[[#EBLPR |EBL Photoresist Datasheets]]
***''Provided for reference, also showing starting recipes and usage info.''
*'''[[Lithography Recipes#Holography Recipes|Holography]]'''
**''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
**''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
*'''[[#NanoImprinting |Nanoimprinting Resists]]'''
**''Datasheets are provided with starting recipes and usage info.''
**''Recipes provided are for use in the [[Nano-Imprint_(Nanonex_NX2000) |Nano-Imprint (Nanonex NX2000)]] system only.''


#'''UV Optical Lithography'''
<u>'''<big>Photolithography Chemicals/Materials</big>'''</u>
#*[[#PositivePR |'''Stocked Lithography Chemical + Datasheets''']]
*'''[[#Underlayers |Underlayers]]'''
#**''Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes.''
**''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
#*[[#Photolithography_Recipes |'''Photo Lithography Recipe section''']]
**''Datasheets are provided.''
#**''Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools.''
*'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
#**''Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution.''
**[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#**[[Contact Alignment Recipes|<u>Contact Aligner Recipes</u>]]
**''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
#***[[Contact Alignment Recipes#Suss Aligners .28SUSS MJB-3.29|Suss MJB Aligners]]
**''Datasheets are provided for reference on use of the materials.''
#***[[Contact Alignment Recipes#Contact Aligner .28SUSS MA-6.29|Suss MA6]]
*'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
#**[[Stepper Recipes|<u>Stepper Recipes</u>]]
**[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#***[[Stepper Recipes#Stepper 1 .28GCA 6300.29|Stepper #1: GCA 6300]] (I-Line)
**''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
#***[[Stepper Recipes#Stepper 2 .28AutoStep 200.29|Stepper #2: GCA Autostep 200]] (I-Line)
**''Datasheets provided with usage info.''
#***[[Stepper Recipes#Stepper 3 .28ASML DUV.29|Stepper #3: ASML PAS 5500/300]] (DUV)
*'''[[#AdhesionPromoters |Adhesion Promoters]]'''
#**[[Direct-Write Lithography Recipes|<u>Direct-Write Recipes</u>]]
**''These are used to improve wetting of photoresists to your substrate.''
#***[[Direct-Write Lithography Recipes#Maskless Aligner .28Heidelberg MLA150.29|Heidelberg MLA150]]
**''Datasheets are provided on use of these materials.''
#***[[Lithography Recipes#E-Beam Lithography Recipes|JEOL JBX-6300FS EBL]]
#***[[Lithography Recipes#FIB Lithography Recipes .28Raith Velion.29|Raith Velion FIB]]
#**[[Lithography Recipes#Automated Coat.2FDevelop System Recipes .28S-Cubed Flexi.29|Automated Coater Recipes (S-Cubed Flexi)]]
#[[Lithography Recipes#General Photolithography Techniques|'''General Photolithography Techniques''']]
#*''Techniques for improving litho. or solving common photolith. problems.''
#'''[[Lithography Recipes#Lift-Off Recipes|Lift-Off Recipes]]'''
#*''Verified Recipes for lift-off using various photolith. tools''
#*''General educational description of this technique and it's limitations/considerations.''
#'''E-beam Lithography'''
#*[[#E-Beam_Lithography_Recipes |E-Beam Lithography Recipes]]
#**''Has links to starting recipes. Substrates and patterns play a large role in process parameters.''
#*[[#EBLPR |EBL Photoresist Datasheets]]
#**''Provided for reference, also showing starting recipes and usage info.''
#'''[[Lithography Recipes#Holography Recipes|Holography]]'''
#*''For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.''
#*''Recipes for silicon substrates are provided, and have been translated to other substrates by users.''
#*''Datasheets are provided with starting recipes and usage info.''
#'''[[Lithography Recipes#Edge-Bead Removal Techniques|Edge-Bead Removal]]'''
#*''Edge photoresist removal methods needed for clamp-based etchers''
#*''Improves resolution for contact lithography''
|-
|

==='''<big>Photolithography Chemicals/Materials</big>'''===


*'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
#'''[[#Underlayers |Underlayers]]'''
#*''These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.''
**[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
***''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
#*''Datasheets are provided.''
#'''[[#AntiReflectionCoatings |Anti-Reflection Coatings]]''':
**[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
***''Recipes for usage of some spin-on dielectrics.''
#*''Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.''
*'''[[#Developers |Developers and Removers]]'''
**''Datasheets provided for reference.''
#*''Datasheets are provided for reference on use of the materials.''
#'''[[#ContrastEnhancement |Contrast Enhancement Materials (CEM)]]'''
**''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
#*[[#Photolithography_Recipes |The Photoresist Recipes]] section contains recipes using these materials.
#*''Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.''
#*''Datasheets provided with usage info.''
#'''[[#AdhesionPromoters |Adhesion Promoters]]'''
#*''These are used to improve wetting of photoresists to your substrate.''
#*''Datasheets are provided on use of these materials.''
#'''[[#SpinOnDielectrics |Low-K Spin-on Dielectrics]]'''
#*[[Lithography Recipes#SpinOnDielectrics|Spin-On Dielectrics]]
#**''Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use.''
#*[[#Low-K_Spin-On_Dielectric_Recipes |Low-K Spin-On Dielectric Recipes]]
#**''Recipes for usage of some spin-on dielectrics.''
#'''[[#Developers |Developers and Removers]]'''
#*''Datasheets provided for reference.''
#*''Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.''
|}
|}

==General Photolithography Techniques==

====[[Photolithography - Improving Adhesion Photoresist Adhesion|'''HMDS Process for Improving Adhesion''']]====

*''Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.''

====[[Photolithography - Manual Edge-Bead Removal Techniques|'''Edge-Bead Removal Techniques''']]====

*''These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).''
*''For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the [[Maskless Aligner (Heidelberg MLA150)|Maskless Aligner]], EBR can help with autofocus issues.''

====[https://www.microchemicals.com/technical_information/reflow_photoresist.pdf '''Photoresist reflow (MicroChem)''']====

*''To create slanted sidewalls or curved surfaces.''
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']]

* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.''
* ''Explains how to locate the'' ''"Process Window" for your lithography.''


==Photolithography Recipes==
==Photolithography Recipes==


*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small>
{{Recipe Table Explanation}}
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small>


==='''Process Ranking Table'''===
Processes in the table above are ranked by their "''Process Maturity Level''" as follows:
{| class="wikitable"
!Process Level
! colspan="11" |Description of Process Level Ranking
|-
|A
| colspan="11" |Process '''A'''llowed and materials available but never done
|-
|R1
| colspan="11" |Process has been run at least once
|-
|R2
| colspan="11" |Process has been run and/or procedure is documented or/and data available
|-
|R3
| colspan="11" |Process has been run, procedure is documented, and data is available
|-
|R4
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available
|-
|R5
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available
|-
|R6
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available
|}

''Click the tool title to go to recipes for that tool.''

''Click the photoresist title to get the datasheet, also found in [[Lithography Recipes#Chemicals Stocked .2B Datasheets|Stocked Chemicals + Datasheets]].''
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| bgcolor="#EAECF0" | <!-- INTENTIONALLY BLANK -->
| bgcolor="#EAECF0" |<!-- INTENTIONALLY BLANK -->
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
! colspan="2" align="center" |'''[[Contact Alignment Recipes|<big>Contact Aligner Recipes</big>]]'''
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
! colspan="3" align="center" |'''[[Stepper Recipes|<big>Stepper Recipes</big>]]'''
! align="center" |Other
! align="center" |[[Direct-Write Lithography Recipes|Direct-Write Litho. Recipes]]
|-
|-
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
! width="150" bgcolor="#D0E7FF" align="center" |'''Positive Resists'''
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| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY
| bgcolor="#D0E7FF" align="center" |NR9-[//wiki.nanotech.ucsb.edu/w/images/8/8f/NR9-1000PY-revA.pdf 1000],[//wiki.nanotech.ucsb.edu/w/images/7/71/NR9-3000PY-revA.pdf 3000],[//wiki.nanotech.ucsb.edu/w/images/f/f9/NR9-6000PY-revA.pdf 6000]PY
Line 247: Line 314:
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}}
|A
|A
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}}
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}}
|
|
|
|A
|- bgcolor="EEFFFF"
|- bgcolor="EEFFFF"
! bgcolor="#D0E7FF" align="center" | '''Anti-Reflection Coatings'''
! bgcolor="#D0E7FF" align="center" |'''Anti-Reflection Coatings'''
{{LithRecipe Table}}
{{LithRecipe Table}}
|-
|-
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/3/33/XHRiC-Anti-Reflective-Coating.pdf XHRiC-11]
|
|
|A
|A
|
|A
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/0/07/DUV42P-Anti-Reflective-Coating.pdf DUV42-P]
|
|
Line 259: Line 334:
|
|
|
|
|{{rl|Stepper Recipes|DUV-42P}}
|{{rl|Stepper Recipes|DUV-42P-6|R3}}
|
|
|-
|- bgcolor="EEFFFF"
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101-304]
|
|
Line 267: Line 342:
|
|
|
|
|{{rl|Stepper Recipes|DS-K101-304}}
|{{rl|Stepper Recipes|DS-K101-304|R3}}
|
|
|-
|-
! bgcolor="#D0E7FF" align="center" |
! bgcolor="#D0E7FF" align="center" |
{{LithRecipe Table}}
{{LithRecipe Table}}
|}
|}
<!-- end Litho Recipes table -->
<!-- end Litho Recipes table -->
Line 279: Line 354:
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
*{{fl|Liftoff-Techniques.pdf|Lift-Off Description/Tutorial}}
**How it works, process limits and considerations for designing your process
**How it works, process limits and considerations for designing your process
*[[Lift-Off with I-Line Imaging Resist + LOL2000 Underlayer|I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer]]
**''Single Expose/Develop process for simplicity''
**''Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.''
**''Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)''
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
*{{fl|Bi-LayerContactprocesswithPMGI.pdf|I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner}}
**''Multiple processes for Metal thicknesses ~800nm to ~2.5µm''
**''Uses multiple DUV Flood exposure/develop cycles to create undercut.''
**''Can be transferred to other I-Line litho tools (Stepper, MLA etc.)''
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
*[[Lift-Off with DUV Imaging + PMGI Underlayer|DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer]]
**''Single-expose/develop process''
**''Up to ~65nm metal thickness & ~350nm gap between metal''
**''Use thicker PMGI for thicker metals''


==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==
==[[E-Beam Lithography System (JEOL JBX-6300FS)|E-Beam Lithography Recipes (JEOL JBX-6300FS)]]==
Line 286: Line 371:
*Under Development.
*Under Development.


== [[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]] ==
==[[Focused Ion-Beam Lithography (Raith Velion)|FIB Lithography Recipes (Raith Velion)]]==
''To Be Added''
''To Be Added''


Line 292: Line 377:
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.


===Available Variations===
''To Be Added''


*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
==[[Nano-Imprint (Nanonex NX2000)|Nanoimprinting Recipes]]==
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so <u>develop times are shorter by ~50%</u> compared to beaker developing.
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly!
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.


===Recipes Table (S-Cubed Flexi)===
*{{fl|Thermal-Nanoimprint-Process-Tutorial-revA.pdf|Thermal Nanoimprint Process and Tutorial}}
{| class="wikitable"
*{{fl|Nanoinprint-Lithopgraphy-UV-Low-Pressure-Temperature-Ormostamp-PDMS-RevA.docx|UV-Cure Low Temp, Low Pressure, Soft-Stamp Nanoimprint Process}}
|+''Ask [[Tony Bosch|Staff]] if you need a new recipe.''
|'''''<u>Coating Material</u>'''''
|'''''<u>Route/Chain</u>'''''
|'''''<u>Name</u>''': (User: "UCSB Users")''
|'''''<u>Spin Speed (krpm)</u>'''''
|'''''<u>Bake Temp</u>'''''
|'''''<u>Notes</u>'''''
|-
! colspan="6" |
|-
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake)
|-
! colspan="6" |
|-
|'''''Hotplate Set'''''
|Route
| colspan="4" |To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed.


HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C
|-
|
|
|HP4-SET-'''220C'''
|
|220°C
|Will over shoot +-2°C when done.
|-
|
|
|HP4-SET-'''210C'''
|
|210°C
|
|-
|
|
|HP4-SET-'''200C'''
|
|200°C
|
|-
|
|
|HP4-SET-'''185C'''
|
|185°C
|
|-
| colspan="6" |'''<u>''Bottom Anti-Reflection Coating (BARC), DSK101 only:''</u>'''
|-
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]'''''
|Route
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]''
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]]

'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)

'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]].

'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.'''
|-
|''<u>1.5krpm</u> recipes''
|
|COAT-DSK101-304[1.5K]-'''185C'''
|1.5krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[1.5K]-'''200C'''
|1.5krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''210C'''
|1.5krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[1.5K]-'''220C'''
|1.5krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |
|-
|''<u>5krpm</u> recipes''
|
|COAT-DSK101-304[5K]-'''185C'''
|5.0krpm
|185°C
|Requires: HP4=185°C,
|-
|
|
|COAT-DSK101-304[5K]-'''200C'''
|5.0krpm
|200°C
|Requires: HP4=200°C
|-
|
|
|COAT-DSK101-304[5K]-'''210C'''
|5.0krpm
|210°C
|Requires: HP4=210°C
|-
|
|
|COAT-DSK101-304[5K]-'''220C'''
|5.0krpm
|220°C
|Requires: HP4=220°C,
|-
| colspan="6" |'''<u>''Imaging resist (UV6) only:''</u>'''
|-
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]'''''
|Route
|COAT-UV6['''2K''']-135C
|2.0krpm
|135°C
|Requires: HP1=135°C
|-
|''varying spin speed''
|
|COAT-UV6['''2.5K''']-135C
|2.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3K''']-135C
|3.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''3.5K''']-135C
|3.5krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''4K''']-135C
|4.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''5K''']-135C
|5.0krpm
|135°C
|Requires: HP1=135°C
|-
|
|
|COAT-UV6['''6K''']-135C
|6.0krpm
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>'''''
|-
|'''''DS-K101 @ 185°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 185°C
UV6: 135°C
|Requires:
– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''<u>1.5krpm DSK</u> recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''<u>5krpm DSK</u> recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>'''
|-
|'''''DS-K101 @ 220°C'''''
'''''+ UV6'''''
|Chain
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C
|DSK: 1.5krpm
UV6: 2.0krpm
|DSK: 220°C
UV6: 135°C
|Requires:
– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.
|-
|''<u>1.5krpm DSK</u> recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C
|DSK: 1.5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C
|DSK: 1.5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C
|DSK: 1.5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C
|DSK: 1.5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C
|DSK: 1.5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C
|DSK: 1.5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
| colspan="6" |
|-
|''<u>5krpm DSK</u> recipes with''
''UV6- various spin speeds''
|
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C
|DSK: 5krpm
UV6: 2.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C
|DSK: 5krpm
UV6: 2.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C
|DSK: 5krpm
UV6: 3.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C
|DSK: 5krpm
UV6: 3.5krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C
|DSK: 5krpm
UV6: 4.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C
|DSK: 5krpm
UV6: 5.0krpm
|same as above
|same as above
|-
|
|
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C
|DSK: 5krpm
UV6: 6.0krpm
|same as above
|same as above
|-
! colspan="6" |
|-
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing)
|-
! colspan="6" |
|-
|'''''PEB Wafer Bake'''''
|Route
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec
|-
|
|
|BAKE-135C-90S
|
|135°C
|Requires: HP1=135°C
|-
| colspan="6" |
|-
|'''''PEB and Developing'''''
|Route
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
| colspan="6" |
|-
|'''Developing'''
|Route
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)

'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)
|-
|''Varying developer time''
|
|DEV[MIF300]-SPIN[300RPM]-'''10S'''
|Developer chuck: 300rpm
|135°C
|Requires: HP1=135°C
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''15S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''20S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''25S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''30S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''35S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''40S'''
|same as above
|same as above
|same as above
|-
|
|
|DEV[MIF300]-SPIN[300RPM]-'''45S'''
|same as above
|same as above
|same as above
|-
|
|
|
|
|
|
|}
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
==[[Holographic Lith/PL Setup (Custom)|Holography Recipes]]==
''The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.''


*{{fl|Holography_Process_for_1D-lines_and_2D-dots_(ARC-11_%26_THMR-IP3600HP-D)-updated-8-13-2018-A.pdf|Standard Holography Process - on SiO2 on Si}}
*{{fl|Holography_Process_for_1D-lines_and_2D-dots_%28ARC-11_%26_THMR-IP3600HP-D%29-updated-4-8-2021.pdf|Standard Holography Process - on SiO2 on Si}}
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
*{{fl|Holography-Process-Variation-revA.pdf|Holography Process Variations - Set-up Angle - Etching into SiO2 and Si}}
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
*{{fl|05-SiO2_Nano-structure_Etch.pdf|Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width}}
Line 322: Line 987:


*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
*{{fl|AXP4000pb-Datasheet.pdf|AZP4000 (AZ4110, AZ4210, AZ4330)}}
*{{Fl|Az_p4620_photoresist_data_package.pdf|AZ P4620}}
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
*{{fl|OCG825-Positive-Resist-Datasheet.pdf|OCG825}}
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
*{{fl|SPR220-Positive-Resist-Datasheet.pdf|SPR220 (SPR220-3, SPR220-7)}}
Line 378: Line 1,044:


*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
*{{fl|XHRiC-Anti-Reflective-Coating.pdf|XHRiC-11 (i-line)}}
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P (DUV) (For AR2 replacement)}}
*{{fl|DUV42P-Anti-Reflective-Coating.pdf|DUV42P-6 (DUV) (For AR2 replacement)}}
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}
*{{fl|DS-K101-304-Anti-Reflective-Coating.pdf|DS-K101-304 (DUV developable BARC)}}


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*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}}
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4022-40(Negative Polarity)}}
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}}
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}}
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}}

Revision as of 21:21, 18 November 2024

Table of Contents

Photolithography Processes

  1. UV Optical Lithography
  2. General Photolithography Techniques
    • Techniques for improving litho. or solving common photolith. problems.
  3. Lift-Off Recipes
    • Verified Recipes for lift-off using various photolith. tools
    • General educational description of this technique and it's limitations/considerations.
  4. E-beam Lithography
  5. Holography
    • For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square.
    • Recipes for silicon substrates are provided, and have been translated to other substrates by users.
    • Datasheets are provided with starting recipes and usage info.
  6. Edge-Bead Removal
    • Edge photoresist removal methods needed for clamp-based etchers
    • Improves resolution for contact lithography

Photolithography Chemicals/Materials

  1. Underlayers
    • These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist.
    • Datasheets are provided.
  2. Anti-Reflection Coatings:
    • The Photoresist Recipes section contains recipes using these materials.
    • Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes.
    • Datasheets are provided for reference on use of the materials.
  3. Contrast Enhancement Materials (CEM)
    • The Photoresist Recipes section contains recipes using these materials.
    • Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers.
    • Datasheets provided with usage info.
  4. Adhesion Promoters
    • These are used to improve wetting of photoresists to your substrate.
    • Datasheets are provided on use of these materials.
  5. Low-K Spin-on Dielectrics
  6. Developers and Removers
    • Datasheets provided for reference.
    • Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching.

General Photolithography Techniques

HMDS Process for Improving Adhesion

  • Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.

Edge-Bead Removal Techniques

  • These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).
  • For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the Maskless Aligner, EBR can help with autofocus issues.

Photoresist reflow (MicroChem)

  • To create slanted sidewalls or curved surfaces.

Lithography Calibration - Analyzing a Focus-Exposure Matrix

  • On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.
  • Explains how to locate the "Process Window" for your lithography.

Photolithography Recipes

  • R: Recipe is available. Clicking this link will take you to the recipe.
  • A: Material is available for use, but no recipes are provided.

Process Ranking Table

Processes in the table above are ranked by their "Process Maturity Level" as follows:

Process Level Description of Process Level Ranking
A Process Allowed and materials available but never done
R1 Process has been run at least once
R2 Process has been run and/or procedure is documented or/and data available
R3 Process has been run, procedure is documented, and data is available
R4 Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available
R5 Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available
R6 Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available

Click the tool title to go to recipes for that tool.

Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.

Photolithography Recipes
Contact Aligner Recipes Stepper Recipes Direct-Write Litho. Recipes
Positive Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)
AZ4110 R1 R1 A A R1
AZ4210 R1 R1 A A A
AZ4330RS R1 R1 A A R1
AZ4620 A A A A A
OCG 825-35CS A A A A A
SPR 955 CM-0.9 A R1 R4 R5 R4
SPR 955 CM-1.8 A A R4 R4 R3
SPR 220-3.0 R1 R1 R4 R4 R1
SPR 220-7.0 R1 R1 R4 R4 R1
THMR-IP3600 HP D A A R1
UV6-0.8 R5
UV210-0.3 R1
UV26-2.5 A
Negative Resists SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)
AZ5214-EIR R1 R1 R1 R1 R1
AZnLOF 2020 R1 R1 R4 R4 R4
AZnLOF 2035 A A A A A
AZnLOF 2070 A A R2 A A
AZnLOF 5510 A A R1 R1 A
UVN30-0.8 R6
SU-8 2005,2010,2015 A R1 A A A
SU-8 2075 A A A A R1
NR9-1000,3000,6000PY R1 R1 A R4 A
Anti-Reflection Coatings SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)
XHRiC-11 A A A
DUV42-P R3
DS-K101-304 R3
SUSS MJB-3 SUSS MA-6 Stepper 1
(GCA 6300) 		Stepper 2
(AutoStep 200) 		Stepper 3
(ASML DUV) 		MLA150
(Heidelberg)

Lift-Off Recipes

E-Beam Lithography Recipes (JEOL JBX-6300FS)

  • Under Development.

FIB Lithography Recipes (Raith Velion)

To Be Added

Automated Coat/Develop System Recipes (S-Cubed Flexi)

Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

Available Variations

  • We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. Note that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
  • DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
  • DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
  • "Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
  • Developer recipes are now available for 300 MiF Developer. Note that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
    • DO NOT EDIT developer recipes, they can damage the tool when programmed incorrectly!
  • "Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
  • ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.

Recipes Table (S-Cubed Flexi)

Ask Staff if you need a new recipe.
Coating Material Route/Chain Name: (User: "UCSB Users") Spin Speed (krpm) Bake Temp Notes
BEFORE LITHOGRAPHY (PR Coat and Bake)
Hotplate Set Route To pre-set the DSK Hotplate temp (HP4).

Note: Only HP4 can be changed.

HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C

HP4-SET-220C 220°C Will over shoot +-2°C when done.
HP4-SET-210C 210°C
HP4-SET-200C 200°C
HP4-SET-185C 185°C
Bottom Anti-Reflection Coating (BARC), DSK101 only:
DS-K101 Route DSK101 Develop Rate depends on Bake temp - you can use this to control undercut. See: DSK Bake vs. Dev rate

DSK101 spun at 1.5K is equivalent to DUV-42P. See: Stepper Recipes#Anti-Reflective Coatings

185°C bake allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features)

220°C bake allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See here for relevant processing info from DUV42P.

Note: All PR coat recipes have EBR backside clean steps included in the recipe.

1.5krpm recipes COAT-DSK101-304[1.5K]-185C 1.5krpm 185°C Requires: HP4=185°C,
COAT-DSK101-304[1.5K]-200C 1.5krpm 200°C Requires: HP4=200°C
COAT-DSK101-304[1.5K]-210C 1.5krpm 210°C Requires: HP4=210°C
COAT-DSK101-304[1.5K]-220C 1.5krpm 220°C Requires: HP4=220°C,
5krpm recipes COAT-DSK101-304[5K]-185C 5.0krpm 185°C Requires: HP4=185°C,
COAT-DSK101-304[5K]-200C 5.0krpm 200°C Requires: HP4=200°C
COAT-DSK101-304[5K]-210C 5.0krpm 210°C Requires: HP4=210°C
COAT-DSK101-304[5K]-220C 5.0krpm 220°C Requires: HP4=220°C,
Imaging resist (UV6) only:
UV6-0.8 Route COAT-UV6[2K]-135C 2.0krpm 135°C Requires: HP1=135°C
varying spin speed COAT-UV6[2.5K]-135C 2.5krpm 135°C Requires: HP1=135°C
COAT-UV6[3K]-135C 3.0krpm 135°C Requires: HP1=135°C
COAT-UV6[3.5K]-135C 3.5krpm 135°C Requires: HP1=135°C
COAT-UV6[4K]-135C 4.0krpm 135°C Requires: HP1=135°C
COAT-UV6[5K]-135C 5.0krpm 135°C Requires: HP1=135°C
COAT-UV6[6K]-135C 6.0krpm 135°C Requires: HP1=135°C
UV6 Coat with Developable BARC underlayer:
DS-K101 @ 185°C

+ UV6

Chain COAT-DSK101[1.5K]-185C-UV6[2K]-135C DSK: 1.5krpm

UV6: 2.0krpm

DSK: 185°C

UV6: 135°C

Requires:

– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.

1.5krpm DSK recipes with

UV6- various spin speeds

COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C DSK: 1.5krpm

UV6: 2.5krpm

same as above same as above
COAT-DSK101[1.5K]-185C-UV6[3K]-135C DSK: 1.5krpm

UV6: 3.0krpm

same as above same as above
COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C DSK: 1.5krpm

UV6: 3.5krpm

same as above same as above
COAT-DSK101[1.5K]-185C-UV6[4K]-135C DSK: 1.5krpm

UV6: 4.0krpm

same as above same as above
COAT-DSK101[1.5K]-185C-UV6[5K]-135C DSK: 1.5krpm

UV6: 5.0krpm

same as above same as above
COAT-DSK101[1.5K]-185C-UV6[6K]-135C DSK: 1.5krpm

UV6: 6.0krpm

same as above same as above
5krpm DSK recipes with

UV6- various spin speeds

COAT-DSK101[5K]-185C-UV6[2K]-135C DSK: 5krpm

UV6: 2.0krpm

same as above same as above
COAT-DSK101[5K]-185C-UV6[2.5K]-135C DSK: 5krpm

UV6: 2.5krpm

same as above same as above
COAT-DSK101[5K]-185C-UV6[3K]-135C DSK: 5krpm

UV6: 3.0krpm

same as above same as above
COAT-DSK101[5K]-185C-UV6[3.5K]-135C DSK: 5krpm

UV6: 3.5krpm

same as above same as above
COAT-DSK101[5K]-185C-UV6[4K]-135C DSK: 5krpm

UV6: 4.0krpm

same as above same as above
COAT-DSK101[5K]-185C-UV6[5K]-135C DSK: 5krpm

UV6: 5.0krpm

same as above same as above
COAT-DSK101[5K]-185C-UV6[6K]-135C DSK: 5krpm

UV6: 6.0krpm

same as above same as above
UV6 Coat with Dry-Etchable BARC underlayer:
DS-K101 @ 220°C

+ UV6

Chain COAT-DSK101[1.5K]-220C-UV6[2K]-135C DSK: 1.5krpm

UV6: 2.0krpm

DSK: 220°C

UV6: 135°C

Requires:

– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.

1.5krpm DSK recipes with

UV6- various spin speeds

COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C DSK: 1.5krpm

UV6: 2.5krpm

same as above same as above
COAT-DSK101[1.5K]-220C-UV6[3K]-135C DSK: 1.5krpm

UV6: 3.0krpm

same as above same as above
COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C DSK: 1.5krpm

UV6: 3.5krpm

same as above same as above
COAT-DSK101[1.5K]-220C-UV6[4K]-135C DSK: 1.5krpm

UV6: 4.0krpm

same as above same as above
COAT-DSK101[1.5K]-220C-UV6[5K]-135C DSK: 1.5krpm

UV6: 5.0krpm

same as above same as above
COAT-DSK101[1.5K]-220C-UV6[6K]-135C DSK: 1.5krpm

UV6: 6.0krpm

same as above same as above
5krpm DSK recipes with

UV6- various spin speeds

COAT-DSK101[5K]-220C-UV6[2K]-135C DSK: 5krpm

UV6: 2.0krpm

same as above same as above
COAT-DSK101[5K]-220C-UV6[2.5K]-135C DSK: 5krpm

UV6: 2.5krpm

same as above same as above
COAT-DSK101[5K]-220C-UV6[3K]-135C DSK: 5krpm

UV6: 3.0krpm

same as above same as above
COAT-DSK101[5K]-220C-UV6[3.5K]-135C DSK: 5krpm

UV6: 3.5krpm

same as above same as above
COAT-DSK101[5K]-220C-UV6[4K]-135C DSK: 5krpm

UV6: 4.0krpm

same as above same as above
COAT-DSK101[5K]-220C-UV6[5K]-135C DSK: 5krpm

UV6: 5.0krpm

same as above same as above
COAT-DSK101[5K]-220C-UV6[6K]-135C DSK: 5krpm

UV6: 6.0krpm

same as above same as above
AFTER LITHOGRAPHY (PEB and Developing)
PEB Wafer Bake Route To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec
BAKE-135C-90S 135°C Requires: HP1=135°C
PEB and Developing Route To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec

WARNING: DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)

Varying developer time BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S Developer chuck: 300rpm 135°C Requires: HP1=135°C
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S same as above same as above same as above
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S same as above same as above same as above
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-25S same as above same as above same as above
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-30S same as above same as above same as above
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-35S same as above same as above same as above
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-40S same as above same as above same as above
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-45S same as above same as above same as above
Developing Route To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)

WARNING: DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!)

Varying developer time DEV[MIF300]-SPIN[300RPM]-10S Developer chuck: 300rpm 135°C Requires: HP1=135°C
DEV[MIF300]-SPIN[300RPM]-15S same as above same as above same as above
DEV[MIF300]-SPIN[300RPM]-20S same as above same as above same as above
DEV[MIF300]-SPIN[300RPM]-25S same as above same as above same as above
DEV[MIF300]-SPIN[300RPM]-30S same as above same as above same as above
DEV[MIF300]-SPIN[300RPM]-35S same as above same as above same as above
DEV[MIF300]-SPIN[300RPM]-40S same as above same as above same as above
DEV[MIF300]-SPIN[300RPM]-45S same as above same as above same as above

Holography Recipes

The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.

Low-K Spin-On Dielectric Recipes

Chemicals Stocked + Datasheets

The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.

Positive Photoresists

i-line and broadband

DUV-248nm

Negative Photoresists

i-line and broadband

DUV-248nm

Underlayers
E-beam resists
Nanoimprinting
Contrast Enhancement Materials
Anti-Reflection Coatings
Adhesion Promoters
Spin-On Dielectrics

Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass

Developers
Photoresist Removers
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