Lithography Recipes: Difference between revisions
(→Recipes Table (S-Cubed Flexi): added rows between variations) |
(→General Photolithography Techniques: link to FEM page) |
||
(22 intermediate revisions by 3 users not shown) | |||
Line 85: | Line 85: | ||
*''To create slanted sidewalls or curved surfaces.'' |
*''To create slanted sidewalls or curved surfaces.'' |
||
[[Lithography Calibration - Analyzing a Focus-Exposure Matrix|'''Lithography Calibration - Analyzing a Focus-Exposure Matrix''']] |
|||
* ''On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.'' |
|||
* ''Explains how to locate the'' ''"Process Window" for your lithography.'' |
|||
==Photolithography Recipes== |
==Photolithography Recipes== |
||
Line 90: | Line 94: | ||
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small> |
*<small>'''R''': ''Recipe is available. Clicking this link will take you to the recipe.''</small> |
||
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small> |
*<small>'''A''': ''Material is available for use, but no recipes are provided.''</small> |
||
==='''Process Ranking Table'''=== |
|||
Processes in the table above are ranked by their "''Process Maturity Level''" as follows: |
|||
{| class="wikitable" |
|||
!Process Level |
|||
! colspan="11" |Description of Process Level Ranking |
|||
|- |
|||
|A |
|||
| colspan="11" |Process '''A'''llowed and materials available but never done |
|||
|- |
|||
|R1 |
|||
| colspan="11" |Process has been run at least once |
|||
|- |
|||
|R2 |
|||
| colspan="11" |Process has been run and/or procedure is documented or/and data available |
|||
|- |
|||
|R3 |
|||
| colspan="11" |Process has been run, procedure is documented, and data is available |
|||
|- |
|||
|R4 |
|||
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''or''' lookahead/in-situ control available |
|||
|- |
|||
|R5 |
|||
| colspan="11" |Process has a documented procedure with regular (≥4x per year) data '''and''' lookahead/in-situ control available |
|||
|- |
|||
|R6 |
|||
| colspan="11" |Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available |
|||
|} |
|||
''Click the tool title to go to recipes for that tool.'' |
''Click the tool title to go to recipes for that tool.'' |
||
Line 108: | Line 140: | ||
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --> |
|- bgcolor="EEFFFF"<!-- This is the Row color: lightblue --> |
||
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]] |
| bgcolor="#D0E7FF" align="center" |[[:File:AXP4000pb-Datasheet.pdf|AZ4110]] |
||
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}} |
||
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
||
|A |
|A |
||
Line 116: | Line 148: | ||
|-<!-- This is a White row color --> |
|-<!-- This is a White row color --> |
||
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210] |
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/f/fc/AXP4000pb-Datasheet.pdf AZ4210] |
||
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)|R1}} |
||
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
||
|A |
|A |
||
Line 150: | Line 182: | ||
|A |
|A |
||
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
||
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}} |
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}} |
||
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}} |
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R5}} |
||
| |
| |
||
|{{rl|MLA Recipes|Positive Resist (MLA 150)}} |
|{{rl|MLA Recipes|Positive Resist (MLA 150)|R4}} |
||
|- |
|- |
||
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8] |
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/2/29/SPR955-Positive-Resist-Datasheet.pdf SPR 955 CM-1.8] |
||
|A |
|A |
||
|A |
|A |
||
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}} |
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}} |
||
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}} |
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}} |
||
| |
| |
||
|A |
|A |
||
Line 166: | Line 198: | ||
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
||
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
||
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}} |
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}} |
||
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}} |
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}} |
||
| |
| |
||
|{{rl|MLA Recipes|Positive Resist (MLA 150)}} |
|{{rl|MLA Recipes|Positive Resist (MLA 150)}} |
||
Line 174: | Line 206: | ||
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
||
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
||
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)}} |
|{{rl|Stepper Recipes|Positive Resist (GCA 6300)|R4}} |
||
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)}} |
|{{rl|Stepper Recipes|Positive Resist (AutoStep 200)|R4}} |
||
| |
| |
||
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}} |
|{{rl|MLA Recipes|Positive_Resist_.28MLA150.29}} |
||
Line 192: | Line 224: | ||
| |
| |
||
| |
| |
||
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)}} |
|{{rl|Stepper Recipes|Positive Resist (ASML DUV)|R5}} |
||
| |
| |
||
|- bgcolor="EEFFFF" |
|- bgcolor="EEFFFF" |
||
Line 225: | Line 257: | ||
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
|{{rl|Contact_Alignment_Recipes|Positive Resist (MJB-3)}} |
||
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}} |
|{{rl|Contact_Alignment_Recipes|Negative Resist (MA-6)}} |
||
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)}} |
|{{rl|Stepper Recipes|Negative Resist (GCA 6300)|R4}} |
||
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}} |
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}} |
||
| |
| |
||
|{{rl|MLA Recipes|Negative Resist (MLA 150)}} |
|{{rl|MLA Recipes|Negative Resist (MLA 150)|R4}} |
||
|- |
|- |
||
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035] |
| bgcolor="#D0E7FF" align="center" |[//wiki.nanotech.ucsb.edu/w/images/5/5e/AZnLOF2020-Negative-Resist-Datasheet.pdf AZnLOF 2035] |
||
Line 241: | Line 273: | ||
|A |
|A |
||
|A |
|A |
||
|{{Rl|Stepper_Recipes|Negative_Resist_.28GCA_6300.29|R2}} |
|||
|A |
|||
|A |
|A |
||
| |
| |
||
Line 259: | Line 291: | ||
| |
| |
||
| |
| |
||
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)}} |
|{{rl|Stepper Recipes|Negative Resist (ASML DUV)|R6}} |
||
| |
| |
||
|- |
|- |
||
Line 282: | Line 314: | ||
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
|{{rl|Contact_Alignment_Recipes|Positive Resist (MA-6)}} |
||
|A |
|A |
||
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)}} |
|{{rl|Stepper Recipes|Negative Resist (AutoStep 200)|R4}} |
||
| |
| |
||
|A |
|A |
||
Line 302: | Line 334: | ||
| |
| |
||
| |
| |
||
|{{rl|Stepper Recipes|DUV-42P-6}} |
|{{rl|Stepper Recipes|DUV-42P-6|R3}} |
||
| |
| |
||
| |
| |
||
Line 311: | Line 343: | ||
| |
| |
||
| |
| |
||
|{{rl|Stepper Recipes|DS-K101-304}} |
|{{rl|Stepper Recipes|DS-K101-304|R3}} |
||
| |
| |
||
|- |
|- |
||
Line 348: | Line 380: | ||
===Available Variations=== |
===Available Variations=== |
||
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. |
*We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. '''Note''' that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed. |
||
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes. |
*DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes. |
||
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required). |
*DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required). |
||
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes". |
*"Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes". |
||
*Developer recipes are now available for 300 MiF Developer. '''Note''' that developer is flowing continuously during the develop, so <u>develop times are shorter by ~50%</u> compared to beaker developing. |
|||
**'''DO NOT EDIT developer recipes''', they can damage the tool when programmed incorrectly! |
|||
*"Chain" recipes for 135*C Post-exposure Bake + Develop have been made. |
|||
*ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done. |
|||
===Recipes Table (S-Cubed Flexi)=== |
===Recipes Table (S-Cubed Flexi)=== |
||
Line 363: | Line 399: | ||
|'''''<u>Notes</u>''''' |
|'''''<u>Notes</u>''''' |
||
|- |
|- |
||
! colspan="6" | |
|||
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]''''' |
|||
|''Route'' |
|||
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]'' |
|||
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]] |
|||
|- |
|- |
||
! colspan="6" |BEFORE LITHOGRAPHY (PR Coat and Bake) |
|||
|1.5krpm recipes |
|||
| |
|- |
||
! colspan="6" | |
|||
|COAT-DSK101-304[1.5K]-185C |
|||
| |
|- |
||
|'''''Hotplate Set''''' |
|||
|185°C |
|||
|Route |
|||
|''Requires: HP4=185°C,'' |
|||
| colspan="4" |To pre-set the DSK Hotplate temp (HP4). |
|||
Note: Only HP4 can be changed. |
|||
HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
|HP4-SET-'''220C''' |
|||
|COAT-DSK101-304[1.5K]-200C |
|||
| |
| |
||
| |
|220°C |
||
|Will over shoot +-2°C when done. |
|||
|''Requires: HP4=200°C'' |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
| |
|HP4-SET-'''210C''' |
||
| |
| |
||
|210°C |
|210°C |
||
| |
|||
|''Requires: HP4=210°C'' |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
|HP4-SET-'''200C''' |
|||
|COAT-DSK101-304[1.5K]-220C |
|||
|1.5 |
|||
|220°C |
|||
|''Requires: HP4=220°C,'' |
|||
|- |
|||
| |
| |
||
|200°C |
|||
| |
| |
||
|- |
|||
| |
| |
||
| |
| |
||
|HP4-SET-'''185C''' |
|||
| |
| |
||
|185°C |
|||
| |
| |
||
|- |
|- |
||
| colspan="6" |'''<u>''Bottom Anti-Reflection Coating (BARC), DSK101 only:''</u>''' |
|||
|5krpm recipes |
|||
|- |
|||
|'''''[https://wiki.nanotech.ucsb.edu/wiki/images/a/af/DS-K101-304-Anti-Reflective-Coating.pdf DS-K101]''''' |
|||
|Route |
|||
| colspan="4" |''DSK101 Develop Rate depends on Bake temp - you can use this to control undercut.'' ''See: [[DS-K101-304 Bake Temp. versus Develop Rate|DSK Bake vs. Dev rate]]'' |
|||
DSK101 spun at 1.5K is equivalent to DUV-42P. See: [[Stepper Recipes#Anti-Reflective Coatings]] |
|||
'''185°C bake''' allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features) |
|||
'''220°C bake''' allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See [[Stepper Recipes#Anti-Reflective Coatings|here for relevant processing info from DUV42P]]. |
|||
'''Note: All PR coat recipes have EBR backside clean steps included in the recipe.''' |
|||
|- |
|||
|''<u>1.5krpm</u> recipes'' |
|||
| |
| |
||
|COAT-DSK101-304[5K]-185C |
|COAT-DSK101-304[1.5K]-'''185C''' |
||
| |
|1.5krpm |
||
|185°C |
|185°C |
||
| |
|Requires: HP4=185°C, |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101-304[5K]-200C |
|COAT-DSK101-304[1.5K]-'''200C''' |
||
| |
|1.5krpm |
||
|200°C |
|200°C |
||
| |
|Requires: HP4=200°C |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101-304[5K]-210C |
|COAT-DSK101-304[1.5K]-'''210C''' |
||
| |
|1.5krpm |
||
|210°C |
|210°C |
||
| |
|Requires: HP4=210°C |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101-304[5K]-220C |
|COAT-DSK101-304[1.5K]-'''220C''' |
||
| |
|1.5krpm |
||
|220°C |
|220°C |
||
| |
|Requires: HP4=220°C, |
||
|- |
|- |
||
| colspan="6" | |
|||
|- |
|||
|''<u>5krpm</u> recipes'' |
|||
| |
| |
||
|COAT-DSK101-304[5K]-'''185C''' |
|||
|5.0krpm |
|||
|185°C |
|||
|Requires: HP4=185°C, |
|||
|- |
|||
| |
| |
||
| |
| |
||
|COAT-DSK101-304[5K]-'''200C''' |
|||
|5.0krpm |
|||
|200°C |
|||
|Requires: HP4=200°C |
|||
|- |
|||
| |
| |
||
| |
| |
||
|COAT-DSK101-304[5K]-'''210C''' |
|||
|5.0krpm |
|||
|210°C |
|||
|Requires: HP4=210°C |
|||
|- |
|||
| |
| |
||
| |
|||
|COAT-DSK101-304[5K]-'''220C''' |
|||
|5.0krpm |
|||
|220°C |
|||
|Requires: HP4=220°C, |
|||
|- |
|||
| colspan="6" |'''<u>''Imaging resist (UV6) only:''</u>''' |
|||
|- |
|- |
||
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]''''' |
|'''''[https://wiki.nanofab.ucsb.edu/w/images/3/38/UV6-Positive-Resist-Datasheet.pdf UV6-0.8]''''' |
||
| |
|Route |
||
|COAT-UV6[2K]-135C |
|COAT-UV6['''2K''']-135C |
||
|2. |
|2.0krpm |
||
|135°C |
|135°C |
||
| |
|Requires: HP1=135°C |
||
|- |
|- |
||
|varying spin speed |
|''varying spin speed'' |
||
| |
| |
||
|COAT-UV6[2.5K]-135C |
|COAT-UV6['''2.5K''']-135C |
||
|2. |
|2.5krpm |
||
|135°C |
|135°C |
||
| |
|Requires: HP1=135°C |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-UV6[3K]-135C |
|COAT-UV6['''3K''']-135C |
||
|3. |
|3.0krpm |
||
|135°C |
|135°C |
||
| |
|Requires: HP1=135°C |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-UV6[3.5K]-135C |
|COAT-UV6['''3.5K''']-135C |
||
|3. |
|3.5krpm |
||
|135°C |
|135°C |
||
| |
|Requires: HP1=135°C |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-UV6[4K]-135C |
|COAT-UV6['''4K''']-135C |
||
|4. |
|4.0krpm |
||
|135°C |
|135°C |
||
| |
|Requires: HP1=135°C |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-UV6[5K]-135C |
|COAT-UV6['''5K''']-135C |
||
|5. |
|5.0krpm |
||
|135°C |
|135°C |
||
| |
|Requires: HP1=135°C |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-UV6[6K]-135C |
|COAT-UV6['''6K''']-135C |
||
|6. |
|6.0krpm |
||
|135°C |
|135°C |
||
| |
|Requires: HP1=135°C |
||
|- |
|- |
||
| colspan="6" |'''''<u>UV6 Coat with Developable BARC underlayer:</u>''''' |
|||
| |
|||
| |
|||
| |
|||
| |
|||
| |
|||
| |
|||
|- |
|- |
||
|'''''DS-K101 @ 185°C''''' |
|'''''DS-K101 @ 185°C''''' |
||
'''''+ UV6''''' |
'''''+ UV6''''' |
||
| |
|Chain |
||
|COAT-DSK101[1.5K]-185C-UV6[2K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''2K''']-135C |
||
| |
|DSK: 1.5krpm |
||
UV6: 2.0krpm |
|||
|DSK: 185°C |
|DSK: 185°C |
||
UV6: 135°C |
UV6: 135°C |
||
| |
|Requires: |
||
– HP4=185°C |
|||
– HP1=135°C |
|||
Plan for ~10-15 min per wafer. |
|||
|- |
|- |
||
|1.5krpm DSK recipes |
|''<u>1.5krpm DSK</u> recipes with'' |
||
''UV6- various spin speeds'' |
|||
| |
| |
||
|COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''2.5K''']-135C |
||
| |
|DSK: 1.5krpm |
||
UV6: 2.5krpm |
|||
| |
|same as above |
||
| |
|same as above |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101[1.5K]-185C-UV6[3K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''3K''']-135C |
||
| |
|DSK: 1.5krpm |
||
UV6: 3.0krpm |
|||
| |
|same as above |
||
| |
|same as above |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''3.5K''']-135C |
||
| |
|DSK: 1.5krpm |
||
UV6: 3.5krpm |
|||
| |
|same as above |
||
| |
|same as above |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101[1.5K]-185C-UV6[4K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''4K''']-135C |
||
| |
|DSK: 1.5krpm |
||
UV6: 4.0krpm |
|||
| |
|same as above |
||
| |
|same as above |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101[1.5K]-185C-UV6[5K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''5K''']-135C |
||
| |
|DSK: 1.5krpm |
||
UV6: 5.0krpm |
|||
| |
|same as above |
||
| |
|same as above |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101[1.5K]-185C-UV6[6K]-135C |
|COAT-DSK101['''1.5K''']-185C-UV6['''6K''']-135C |
||
| |
|DSK: 1.5krpm |
||
UV6: 6.0krpm |
|||
| |
|same as above |
||
| |
|same as above |
||
|- |
|- |
||
| colspan="6" | |
|||
|- |
|||
|''<u>5krpm DSK</u> recipes with'' |
|||
''UV6- various spin speeds'' |
|||
| |
| |
||
|COAT-DSK101['''5K''']-185C-UV6['''2K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 2.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
| |
||
| |
| |
||
|COAT-DSK101['''5K''']-185C-UV6['''2.5K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 2.5krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
| |
||
| |
|||
|COAT-DSK101['''5K''']-185C-UV6['''3K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 3.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
| |
||
| |
| |
||
|COAT-DSK101['''5K''']-185C-UV6['''3.5K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 3.5krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|- |
||
|5krpm DSK recipes |
|||
| |
| |
||
| |
|||
|COAT-DSK101[1.5K]-220C-UV6[2K]-135C |
|||
|COAT-DSK101['''5K''']-185C-UV6['''4K''']-135C |
|||
|''DSK: 5krpm'' |
|||
|DSK: 5krpm |
|||
''UV6: 2.0krpm'' |
|||
UV6: 4.0krpm |
|||
|''same as above'' |
|||
| |
|same as above |
||
|same as above |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101[ |
|COAT-DSK101['''5K''']-185C-UV6['''5K''']-135C |
||
| |
|DSK: 5krpm |
||
UV6: 5.0krpm |
|||
| |
|same as above |
||
| |
|same as above |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101[ |
|COAT-DSK101['''5K''']-185C-UV6['''6K''']-135C |
||
| |
|DSK: 5krpm |
||
UV6: 6.0krpm |
|||
| |
|same as above |
||
| |
|same as above |
||
|- |
|||
| colspan="6" |'''<u>''UV6 Coat with Dry-Etchable BARC underlayer:''</u>''' |
|||
|- |
|||
|'''''DS-K101 @ 220°C''''' |
|||
'''''+ UV6''''' |
|||
|Chain |
|||
|COAT-DSK101['''1.5K''']-220C-UV6['''2K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 2.0krpm |
|||
|DSK: 220°C |
|||
UV6: 135°C |
|||
|Requires: |
|||
– HP4=220°C |
|||
– HP1=135°C |
|||
Plan for ~10-15 min per wafer. |
|||
|- |
|||
|''<u>1.5krpm DSK</u> recipes with'' |
|||
''UV6- various spin speeds'' |
|||
| |
|||
|COAT-DSK101['''1.5K''']-220C-UV6['''2.5K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 2.5krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101[1.5K]-220C-UV6[ |
|COAT-DSK101['''1.5K''']-220C-UV6['''3K''']-135C |
||
| |
|DSK: 1.5krpm |
||
UV6: 3.0krpm |
|||
| |
|same as above |
||
| |
|same as above |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101[1.5K]-220C-UV6[ |
|COAT-DSK101['''1.5K''']-220C-UV6['''3.5K''']-135C |
||
| |
|DSK: 1.5krpm |
||
UV6: 3.5krpm |
|||
| |
|same as above |
||
| |
|same as above |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101[1.5K]-220C-UV6[ |
|COAT-DSK101['''1.5K''']-220C-UV6['''4K''']-135C |
||
| |
|DSK: 1.5krpm |
||
UV6: 4.0krpm |
|||
| |
|same as above |
||
| |
|same as above |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101[1.5K]-220C-UV6[ |
|COAT-DSK101['''1.5K''']-220C-UV6['''5K''']-135C |
||
| |
|DSK: 1.5krpm |
||
UV6: 5.0krpm |
|||
| |
|same as above |
||
| |
|same as above |
||
|- |
|- |
||
| |
| |
||
| |
| |
||
|COAT-DSK101['''1.5K''']-220C-UV6['''6K''']-135C |
|||
|DSK: 1.5krpm |
|||
UV6: 6.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| colspan="6" | |
|||
|- |
|||
|''<u>5krpm DSK</u> recipes with'' |
|||
''UV6- various spin speeds'' |
|||
| |
| |
||
|COAT-DSK101['''5K''']-220C-UV6['''2K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 2.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
| |
||
| |
| |
||
|COAT-DSK101['''5K''']-220C-UV6['''2.5K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 2.5krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
| |
||
| |
|||
|COAT-DSK101['''5K''']-220C-UV6['''3K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 3.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|- |
||
| |
|||
|'''''DS-K101 @ 185°C''''' |
|||
| |
|||
'''''+ UV6''''' |
|||
|COAT-DSK101['''5K''']-220C-UV6['''3.5K''']-135C |
|||
|''Chain'' |
|||
|DSK: 5krpm |
|||
|Coat-DSK101[5K]-185C-UV6[2K]-135C |
|||
UV6: 3.5krpm |
|||
|same as above |
|||
''UV6: 2.0krpm'' |
|||
|same as above |
|||
|DSK: 185°C |
|||
|- |
|||
UV6: 135°C |
|||
| |
|||
|''Requires:'' |
|||
| |
|||
''– HP4=185°C'' |
|||
|COAT-DSK101['''5K''']-220C-UV6['''4K''']-135C |
|||
|DSK: 5krpm |
|||
''– HP1=135°C'' |
|||
UV6: 4.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-220C-UV6['''5K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 5.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
|COAT-DSK101['''5K''']-220C-UV6['''6K''']-135C |
|||
|DSK: 5krpm |
|||
UV6: 6.0krpm |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
! colspan="6" | |
|||
|- |
|||
! colspan="6" |AFTER LITHOGRAPHY (PEB and Developing) |
|||
|- |
|||
! colspan="6" | |
|||
|- |
|||
|'''''PEB Wafer Bake''''' |
|||
|Route |
|||
| colspan="4" |To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec |
|||
|- |
|||
| |
|||
| |
|||
|BAKE-135C-90S |
|||
| |
|||
|135°C |
|||
|Requires: HP1=135°C |
|||
|- |
|||
| colspan="6" | |
|||
|- |
|||
|'''''PEB and Developing''''' |
|||
|Route |
|||
| colspan="4" |To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec |
|||
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!) |
|||
''Plan for ~10-15 min per wafer.'' |
|||
|- |
|- |
||
|''Varying developer time'' |
|||
|5krpm DSK |
|||
| |
| |
||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''10S''' |
|||
|Coat-DSK101[5K]-185C-UV6[2.5K]-135C |
|||
|Developer chuck: 300rpm |
|||
|''DSK: 5krpm'' |
|||
|135°C |
|||
''UV6: 2.5krpm'' |
|||
|Requires: HP1=135°C |
|||
|''same as above'' |
|||
|''same as above'' |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''15S''' |
|||
|Coat-DSK101[5K]-185C-UV6[3K]-135C |
|||
|same as above |
|||
|''DSK: 5krpm'' |
|||
|same as above |
|||
''UV6: 3.0krpm'' |
|||
| |
|same as above |
||
|''same as above'' |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''20S''' |
|||
|Coat-DSK101[5K]-185C-UV6[3.5K]-135C |
|||
|same as above |
|||
|''DSK: 5krpm'' |
|||
|same as above |
|||
''UV6: 3.5krpm'' |
|||
| |
|same as above |
||
|''same as above'' |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''25S''' |
|||
|Coat-DSK101[5K]-185C-UV6[4K]-135C |
|||
|same as above |
|||
|''DSK: 5krpm'' |
|||
|same as above |
|||
''UV6: 4.0krpm'' |
|||
| |
|same as above |
||
|''same as above'' |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''30S''' |
|||
|Coat-DSK101[5K]-185C-UV6[5K]-135C |
|||
|same as above |
|||
|''DSK: 5krpm'' |
|||
|same as above |
|||
''UV6: 5.0krpm'' |
|||
| |
|same as above |
||
|''same as above'' |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''35S''' |
|||
|Coat-DSK101[5K]-185C-UV6[6K]-135C |
|||
|same as above |
|||
|''DSK: 5krpm'' |
|||
|same as above |
|||
''UV6: 6.0krpm'' |
|||
| |
|same as above |
||
|''same as above'' |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''40S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
| |
||
| |
| |
||
|BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-'''45S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| colspan="6" | |
|||
|- |
|||
|'''Developing''' |
|||
|Route |
|||
| colspan="4" |To only develop wafer using AZ300MIF and water rinse 60sec (No PEB) |
|||
'''WARNING''': DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!) |
|||
|- |
|||
|''Varying developer time'' |
|||
| |
| |
||
|DEV[MIF300]-SPIN[300RPM]-'''10S''' |
|||
|Developer chuck: 300rpm |
|||
|135°C |
|||
|Requires: HP1=135°C |
|||
|- |
|||
| |
| |
||
| |
|||
|DEV[MIF300]-SPIN[300RPM]-'''15S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|- |
||
|'''''Hotplate Set''''' |
|||
|''Route'' |
|||
|''SET-HP4-220C'' |
|||
| |
| |
||
| |
|||
|220°C |
|||
|DEV[MIF300]-SPIN[300RPM]-'''20S''' |
|||
|''Hotplate 4 (top) between 218-222°C when done.'' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|- |
||
|To pre-set the DSK Hotplate temp. |
|||
| |
| |
||
|''SET-HP4-210C'' |
|||
| |
| |
||
|DEV[MIF300]-SPIN[300RPM]-'''25S''' |
|||
|210°C |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
| |
||
|DEV[MIF300]-SPIN[300RPM]-'''30S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
|DEV[MIF300]-SPIN[300RPM]-'''35S''' |
|||
|''SET-HP4-200C'' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
| |
||
|200°C |
|||
| |
| |
||
|DEV[MIF300]-SPIN[300RPM]-'''40S''' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|- |
||
| |
| |
||
| |
| |
||
|DEV[MIF300]-SPIN[300RPM]-'''45S''' |
|||
|''SET-HP4-185C'' |
|||
|same as above |
|||
|same as above |
|||
|same as above |
|||
|- |
|||
| |
|||
| |
|||
| |
|||
| |
|||
| |
| |
||
|185*C |
|||
| |
| |
||
|} |
|} |
||
Line 821: | Line 1,060: | ||
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}} |
*{{fl|BCB-cyclotene-3000-revA.pdf|BCB, Cyclotene 3022-46(Not Photosensitive)}} |
||
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene |
*{{fl|BCB-cyclotene-4000-revA.pdf|PhotoBCB, Cyclotene 4024-40(Negative Polarity)}} |
||
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}} |
*{{fl|BCB-adhesion.pdf|BCB Adhesion Notes from Vendor}} |
||
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}} |
*{{fl|BCB-rework.pdf|BCB rework Notes from Vendor}} |
Latest revision as of 16:54, 6 November 2024
Table of Contents |
---|
Photolithography Processes
|
Photolithography Chemicals/Materials
|
General Photolithography Techniques
HMDS Process for Improving Adhesion
- Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly.
Edge-Bead Removal Techniques
- These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer).
- For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the Maskless Aligner, EBR can help with autofocus issues.
Photoresist reflow (MicroChem)
- To create slanted sidewalls or curved surfaces.
Lithography Calibration - Analyzing a Focus-Exposure Matrix
- On tools with autofocus (steppers & direct-write litho tools), you calibrate your litho by shooting a "Focus Exposure Matrix/Array", or "FEM/FEA", which exposes a grid with Dose varying in one axis, and Focus varying in the other.
- Explains how to locate the "Process Window" for your lithography.
Photolithography Recipes
- R: Recipe is available. Clicking this link will take you to the recipe.
- A: Material is available for use, but no recipes are provided.
Process Ranking Table
Processes in the table above are ranked by their "Process Maturity Level" as follows:
Process Level | Description of Process Level Ranking | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|
A | Process Allowed and materials available but never done | ||||||||||
R1 | Process has been run at least once | ||||||||||
R2 | Process has been run and/or procedure is documented or/and data available | ||||||||||
R3 | Process has been run, procedure is documented, and data is available | ||||||||||
R4 | Process has a documented procedure with regular (≥4x per year) data or lookahead/in-situ control available | ||||||||||
R5 | Process has a documented procedure with regular (≥4x per year) data and lookahead/in-situ control available | ||||||||||
R6 | Process has a documented procedure, regular ( ≥4x per year) data, and control charts & limits available |
Click the tool title to go to recipes for that tool.
Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.
Lift-Off Recipes
- Lift-Off Description/Tutorial
- How it works, process limits and considerations for designing your process
- I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer
- Single Expose/Develop process for simplicity
- Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal.
- Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA)
- I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner
- Multiple processes for Metal thicknesses ~800nm to ~2.5µm
- Uses multiple DUV Flood exposure/develop cycles to create undercut.
- Can be transferred to other I-Line litho tools (Stepper, MLA etc.)
- DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer
- Single-expose/develop process
- Up to ~65nm metal thickness & ~350nm gap between metal
- Use thicker PMGI for thicker metals
E-Beam Lithography Recipes (JEOL JBX-6300FS)
- Under Development.
FIB Lithography Recipes (Raith Velion)
To Be Added
Automated Coat/Develop System Recipes (S-Cubed Flexi)
Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.
Available Variations
- We have different recipes with varyious UV6 spin speeds - the same spin speed optionss as found on our manual Headway spinners. This allows for PR thickness control. See the linked UV6 datasheets below for thickness vs. rpm spin curves. Note that exact spin RPM may be slightly different between Headway spinners (on benches) vs. S-Cubed.
- DSK is recommended to be spun at 1.5krpm (~40nm) for best anti-reflection properties. 5krpm (~20nm) recipes are also provided for historical/legacy processes.
- DSK can be baked at either 220C to act as a Dry-etchable BARC (similar to DUV-42P), or at lower temps as a developable BARC (no dry etch required).
- "Chain" recipes (with DSK+UV6 spin/cured in succession) are only available for DSK Baked at 185C & 220C, and all UV6 Spin-speed variations. For the other DSK temps you can use the single-PR "Routes".
- Developer recipes are now available for 300 MiF Developer. Note that developer is flowing continuously during the develop, so develop times are shorter by ~50% compared to beaker developing.
- DO NOT EDIT developer recipes, they can damage the tool when programmed incorrectly!
- "Chain" recipes for 135*C Post-exposure Bake + Develop have been made.
- ASML cassettes can be placed directly on this tool for spin / exposure / develop process. Please make sure all cassettes are kept back at their respecting tools when done.
Recipes Table (S-Cubed Flexi)
Coating Material | Route/Chain | Name: (User: "UCSB Users") | Spin Speed (krpm) | Bake Temp | Notes |
BEFORE LITHOGRAPHY (PR Coat and Bake) | |||||
---|---|---|---|---|---|
Hotplate Set | Route | To pre-set the DSK Hotplate temp (HP4).
Note: Only HP4 can be changed. HP1-HP3 remains fixed at: HP1=135°C, HP2=170°C & HP3=170°C | |||
HP4-SET-220C | 220°C | Will over shoot +-2°C when done. | |||
HP4-SET-210C | 210°C | ||||
HP4-SET-200C | 200°C | ||||
HP4-SET-185C | 185°C | ||||
Bottom Anti-Reflection Coating (BARC), DSK101 only: | |||||
DS-K101 | Route | DSK101 Develop Rate depends on Bake temp - you can use this to control undercut. See: DSK Bake vs. Dev rate
DSK101 spun at 1.5K is equivalent to DUV-42P. See: Stepper Recipes#Anti-Reflective Coatings 185°C bake allows the DSK to dissolve during develop, and allows for undercut (may lift-off small features) 220°C bake allows DSK to be used as dry-etchable BARC (equiv. to DUV42P), requiring O2 etch to remove. Better for small features. See here for relevant processing info from DUV42P. Note: All PR coat recipes have EBR backside clean steps included in the recipe. | |||
1.5krpm recipes | COAT-DSK101-304[1.5K]-185C | 1.5krpm | 185°C | Requires: HP4=185°C, | |
COAT-DSK101-304[1.5K]-200C | 1.5krpm | 200°C | Requires: HP4=200°C | ||
COAT-DSK101-304[1.5K]-210C | 1.5krpm | 210°C | Requires: HP4=210°C | ||
COAT-DSK101-304[1.5K]-220C | 1.5krpm | 220°C | Requires: HP4=220°C, | ||
5krpm recipes | COAT-DSK101-304[5K]-185C | 5.0krpm | 185°C | Requires: HP4=185°C, | |
COAT-DSK101-304[5K]-200C | 5.0krpm | 200°C | Requires: HP4=200°C | ||
COAT-DSK101-304[5K]-210C | 5.0krpm | 210°C | Requires: HP4=210°C | ||
COAT-DSK101-304[5K]-220C | 5.0krpm | 220°C | Requires: HP4=220°C, | ||
Imaging resist (UV6) only: | |||||
UV6-0.8 | Route | COAT-UV6[2K]-135C | 2.0krpm | 135°C | Requires: HP1=135°C |
varying spin speed | COAT-UV6[2.5K]-135C | 2.5krpm | 135°C | Requires: HP1=135°C | |
COAT-UV6[3K]-135C | 3.0krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[3.5K]-135C | 3.5krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[4K]-135C | 4.0krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[5K]-135C | 5.0krpm | 135°C | Requires: HP1=135°C | ||
COAT-UV6[6K]-135C | 6.0krpm | 135°C | Requires: HP1=135°C | ||
UV6 Coat with Developable BARC underlayer: | |||||
DS-K101 @ 185°C
+ UV6 |
Chain | COAT-DSK101[1.5K]-185C-UV6[2K]-135C | DSK: 1.5krpm
UV6: 2.0krpm |
DSK: 185°C
UV6: 135°C |
Requires:
– HP4=185°C – HP1=135°C Plan for ~10-15 min per wafer. |
1.5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[1.5K]-185C-UV6[2.5K]-135C | DSK: 1.5krpm
UV6: 2.5krpm |
same as above | same as above | |
COAT-DSK101[1.5K]-185C-UV6[3K]-135C | DSK: 1.5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[3.5K]-135C | DSK: 1.5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[4K]-135C | DSK: 1.5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[5K]-135C | DSK: 1.5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-185C-UV6[6K]-135C | DSK: 1.5krpm
UV6: 6.0krpm |
same as above | same as above | ||
5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[5K]-185C-UV6[2K]-135C | DSK: 5krpm
UV6: 2.0krpm |
same as above | same as above | |
COAT-DSK101[5K]-185C-UV6[2.5K]-135C | DSK: 5krpm
UV6: 2.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[3K]-135C | DSK: 5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[3.5K]-135C | DSK: 5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[4K]-135C | DSK: 5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[5K]-135C | DSK: 5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-185C-UV6[6K]-135C | DSK: 5krpm
UV6: 6.0krpm |
same as above | same as above | ||
UV6 Coat with Dry-Etchable BARC underlayer: | |||||
DS-K101 @ 220°C
+ UV6 |
Chain | COAT-DSK101[1.5K]-220C-UV6[2K]-135C | DSK: 1.5krpm
UV6: 2.0krpm |
DSK: 220°C
UV6: 135°C |
Requires:
– HP4=220°C – HP1=135°C Plan for ~10-15 min per wafer. |
1.5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[1.5K]-220C-UV6[2.5K]-135C | DSK: 1.5krpm
UV6: 2.5krpm |
same as above | same as above | |
COAT-DSK101[1.5K]-220C-UV6[3K]-135C | DSK: 1.5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[3.5K]-135C | DSK: 1.5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[4K]-135C | DSK: 1.5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[5K]-135C | DSK: 1.5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[1.5K]-220C-UV6[6K]-135C | DSK: 1.5krpm
UV6: 6.0krpm |
same as above | same as above | ||
5krpm DSK recipes with
UV6- various spin speeds |
COAT-DSK101[5K]-220C-UV6[2K]-135C | DSK: 5krpm
UV6: 2.0krpm |
same as above | same as above | |
COAT-DSK101[5K]-220C-UV6[2.5K]-135C | DSK: 5krpm
UV6: 2.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[3K]-135C | DSK: 5krpm
UV6: 3.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[3.5K]-135C | DSK: 5krpm
UV6: 3.5krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[4K]-135C | DSK: 5krpm
UV6: 4.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[5K]-135C | DSK: 5krpm
UV6: 5.0krpm |
same as above | same as above | ||
COAT-DSK101[5K]-220C-UV6[6K]-135C | DSK: 5krpm
UV6: 6.0krpm |
same as above | same as above | ||
AFTER LITHOGRAPHY (PEB and Developing) | |||||
PEB Wafer Bake | Route | To bake wafer with UV6 after exposure (PEB) for 90sec and cool for 15sec | |||
BAKE-135C-90S | 135°C | Requires: HP1=135°C | |||
PEB and Developing | Route | To post-exposure bake wafer after exposure (std. PEB for UV6) 90sec, cool 15sec, develop using AZ300MIF and water rinse 60sec
WARNING: DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!) | |||
Varying developer time | BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-10S | Developer chuck: 300rpm | 135°C | Requires: HP1=135°C | |
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-15S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-20S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-25S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-30S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-35S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-40S | same as above | same as above | same as above | ||
BAKE-135C-90S-DEV[MIF300]-SPIN[300RPM]-45S | same as above | same as above | same as above | ||
Developing | Route | To only develop wafer using AZ300MIF and water rinse 60sec (No PEB)
WARNING: DO NOT USE ANY OTHER DEVELOPER RECIPES OTHER THAN THE ONES LISTED HERE (or equipment damage may occur!) | |||
Varying developer time | DEV[MIF300]-SPIN[300RPM]-10S | Developer chuck: 300rpm | 135°C | Requires: HP1=135°C | |
DEV[MIF300]-SPIN[300RPM]-15S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-20S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-25S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-30S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-35S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-40S | same as above | same as above | same as above | ||
DEV[MIF300]-SPIN[300RPM]-45S | same as above | same as above | same as above | ||
Holography Recipes
The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.
- Standard Holography Process - on SiO2 on Si
- Holography Process Variations - Set-up Angle - Etching into SiO2 and Si
- Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width
- Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching
Low-K Spin-On Dielectric Recipes
Chemicals Stocked + Datasheets
The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.